此論文的目的是針對我們實驗室內建構一套完整的系統，以成長高品質的單層石墨烯（Graphene），並使用各種不同的鑑定方式來判斷樣品的品質。單層石墨烯是一種單由碳元素組成的薄膜材料，厚度很小，被視為極佳的二維材料。由於其特殊的六角晶格結構，造成它的能帶結構也十分特殊，因而展現特別優異的傳輸特性，以及許多二維空間下特有的物理性質。
在這篇論文中，我們使用化學氣相沉積法來成長石墨烯薄膜。並利用光學顯微鏡、拉曼光譜儀做為初步判斷樣品品質的工具。另外，為了作更深入的基礎物理研究，我們將石墨烯樣品轉移至長有二氧化矽層的高摻雜矽基板上，把薄膜製作成霍爾元件，並進行電性量測。一般以化學氣相沉積法成長石墨烯的製程中，這種轉移過程是影響其基本特性表現很重要的一項步驟。因此在文中，我們針對「轉移石墨烯」這個製程，也提出一些想法，並進行實驗，嘗試改善樣品的品質。
建立化學氣相沉積的成長參數，與嘗試不同的轉移方法之後，我們利用量測石墨烯樣品的電性，更進一部分析微觀下製程對於樣品傳輸特性的影響。再根據文獻的理論計算，解釋所量測到的電性行為。實驗結果顯示，我們對轉移製程的調整很有機會改善樣品中帶電雜質的問題。此外，我們認為藉著此次的分析的經驗，未來將有機會完成一套數值分析方法，對電性量測的數據作定量分析。

第一章 　緒論
1.1 單層石墨烯 ....................................................................................................... 6
1.1.1 晶格結構 .............................................................................................. 6
1.1.2 電子的能帶結構 ................................................................................. 8
1.2 單層石墨烯的電性特色 .................................................................................. 9
1.2.1 迪拉克費米子 ..................................................................................... 9
1.2.2 電荷中性點 ........................................................................................ 10
1.2.3 雙極性場效應 .................................................................................... 11
1.3 單層石墨烯的判斷方式 ................................................................................. 11
1.3.1 光學顯微鏡 ........................................................................................ 11
1.3.2 拉曼光譜儀 ........................................................................................ 12
1.3.3 原子力顯微鏡 .................................................................................... 16
1.3.4 電性量測 ............................................................................................. 16
第二章　化學氣相沉積法成長單層石墨烯 ............................................................... 17
　　2.1 單層石墨烯的製備方式 ................................................................................. 18
　　　　2.1.1 機械剝離法 ........................................................................................... 18
　　　　2.1.2 化學剝離法 ........................................................................................... 18
　　　　2.1.3 磊晶成長法 ........................................................................................... 20
2.1.4 化學氣相沉積法 ................................................................................... 20
2.1.5 選擇CVD製程的原因 ......................................................................... 21
　　2.2 化學氣相沉積法（CVD）製備單層石墨烯 .................................................. 22
2.2.1 CVD 機制 .............................................................................................. 22
2.2.2 CVD 石墨烯的成長機制 .................................................................... 23
　　　　2.2.3 金屬基板 ............................................................................................... 23
　　　　2.2.4 CVD石墨烯的銅製程 .......................................................................... 26
2.3 CVD機台配置與成長參數 .......................................................................... 27
　　　　2.3.1 基台配置與製程參數 .......................................................................... 27
　　　　2.3.2 調變CVD石墨烯的成長參數 ............................................................ 29
　　　　2.3.3 成長CVD石墨烯所遇到的問題 ........................................................ 30
第三章　元件製作 ......................................................................................................... 32
　　3.1 石墨烯轉移 .................................................................................................... 32
　　　　3.1.1 石墨烯轉移方法 .................................................................................. 32
　　　　3.1.2 石墨烯轉移問題一：下層石墨烯殘留 ............................................ 34
　　　　3.1.3 石墨烯轉移問題二：來自蝕刻液的雜質殘留 .................................. 36
　　　　3.1.4 結論 ........................................................................................................ 39
3.2 霍爾元件之設計 .............................................................................................. 41
　　　　3.2.1 霍爾效應 ............................................................................................... 41
　　　　3.2.2 四點量測 ............................................................................................... 43
3.2.3 霍爾元件 ............................................................................................... 44
　　3.3 製作霍爾元件 .................................................................................................. 44
第四章　電性量測 ......................................................................................................... 46
　　4.1 迪拉克錐（Dirac cone）..................................................................................... 46
4.1.1 電荷中性點平移 .................................................................................. 46
4.1.2 雜質濃度 ............................................................................................... 47
4.2 物質隨溫度變化的電性行為 ......................................................................... 49
4.2.1 非導體行為 ........................................................................................... 50
4.2.2 金屬行為 ............................................................................................... 50
　　4.3 石墨烯隨溫度變化的電性行為 ..................................................................... 51
4.3.1 石墨烯的非導體行為 ............................................................................ 51
4.3.2 石墨烯的金屬行為 ................................................................................ 53
4.3.3 石墨烯的非單一行為 ............................................................................ 54
　　4.4 隨載子濃度變化的電性行為 ......................................................................... 54
　　4.5 載子遷移率影響電性行為 ............................................................................. 56
4.6 實驗結果與討論 .............................................................................................. 56
第五章　總結與未來展望 ............................................................................................. 59
附錄一、CVD SOP ............................................................................................................ 61
附錄二、轉移CVD石墨烯 .......................................................................................... 73
參考文獻 .......................................................................................................................... 77

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