為提升日常生活品質，大眾越發重視生活周遭的環境資訊，因此同時監測多種環境資訊之產品日漸蓬勃，並以實現感測器的整合與尺寸微縮為目標。現今環境感測市售產品多以 SiP 之形式整合，本研究利用TSMC 0.18 μm 1P6M CMOS標準製程優勢，與覆晶技術設計開發四種核心環境感測器，包括氣體、濕度、風速與溫度感測器，並透過自行操作後製程去將上述多種感測器整合在單一晶片，去實現環境感測系統晶片(System on Chip, SoC)。本研究包含元件設計、系統整合與製程相容優化三個面向：(1)元件:透過覆晶技術製作氣體感測器以解決在定義金屬氧化物ZnO-SnO2複合材料位置時之逸散問題；(2)元件:設計垂直整合具感測電極之濕度感測器與微加熱器，並將加熱器同時作為風速感測器，藉此縮小尺寸；(3)系統:藉雙面後製程移除背面矽基材與二氧化矽，使多晶矽層作為氣體感測器感測電極，並同時作為熱管理結構減少熱傳；(4)系統:單晶整合氣體、溫度、濕度與風速感測器，實現多功能環境系統晶片，尺寸縮小至2.2 mm × 2.2 mm (BME680: 3 mm × 3 mm，因採用多晶片封裝)。

In order to ensure the quality of life, modern society pays attention to various environmental information. Therefore, products that monitor various environmental information are booming, with the goal of sensor integration and size reduction. Commercial environmental sensing products nowadays are mostly integrated through packaging (SiP). This study demonstrates a monolithically integrated environmental sensing hub, including the MOS type gas sensor (G) with a microheater, diode thermometer (T), capacitive humidity sensor (H), and Hot wire anemometer (F) through standard TSMC 0.18 μm 1P6M CMOS process and in-house post-CMOS processes. Merits of the study include two perspectives, device design and system integration: The contributions of this research cover two aspects: component design and system integration: (1) Component: using flip-chip technology to solve the problem of dissipation when defining metal oxide composite materials for gas sensors. (2) Component: vertically integrate a humidity sensor with sensing electrodes and a micro-heater. The heater will be used as a flow sensor simultaneously, and the overall chip size can be reduced. (3) System: single crystal integrated gas, temperature, humidity and flow sensor, realizing a multi-functional environmental system on a single chip.

摘要 I
Abstract II
致謝 III
目錄 IX
圖目錄 XII
第一章 緒論 1
1-1 前言 1
1-2 文獻回顧 4
1-2-1 CMOS-MEMS 5
1-2-2 氣體感測器感測機制 7
1-2-3 金屬氧化物半導體材料 10
1-2-4 金屬氧化物半導體材料之工作溫度 11
1-2-5 相對溼度計感測機制 12
1-2-6 熱線式風速感測器感測機制 14
1-3 研究動機與目標 16
1-4 全文架構 20
第二章 感測原理與設計分析 35
2-1 TSMC 1P6M製程平台 35
2-2 感測機制 37
2-2-1 金屬氧化物半導體式感測器之感測原理 37
2-2-2 電容式濕度感測器之感測原理 40
2-2-3 熱電子式溫度計之感測原理 41
2-2-4 熱線式溫度計之感測原理 42
2-3 元件設計概念 44
2-4 模擬分析 49
2-4-1 氣體感測器之相關模擬 49
2-4-2 濕度感測器之相關模擬 51
2-4-3 風速感測器之相關模擬 52
2-5 小結 52
第三章 製程設計與結果 65
3-1 CMOS後製程流程 65
3-2 金屬氧化物半導體材料製備 69
3-3 製程結果與失敗分析 70
3-3-1 無光罩式曝光(DLP) 70
3-3-2 矽深反應性離子蝕刻系統(DRIE) 71
3-3-3反應性離子蝕刻系統(RIE) 72
3-3-4覆晶電性連接技術(Flip – Chip Bonding) 74
3-4 小結 75
第四章 量測結果與討論 89
4-1 濕度感測器量測結果 89
4-1-1 濕度感測器之靈敏度量測結果 90
4-1-2 濕度感測器之遲滯效應量測結果 91
4-1-3 濕度感測器之響應時間量測結果 92
4-2 風速感測器量測結果 94
4-3 溫度感測器量測結果 95
4-4 氣體感測器量測結果 95
4-5 結果與討論 96
第五章 結論與未來工作 104
5-1 結論 104
5-2 未來工作 106
5-2-1覆晶電性連接技術改善 107
5-2-2多種氣體量測環境 108
5-2-3五合一環境感測中樞設計構想 109
參考文獻…………………………………………………………. 114

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