本研究以標準CMOS製程製作了一個紅外線焦平面熱感測陣列，並以電容式雙層材料懸臂樑作為感熱元件，其感測原理為利用感熱結構將吸收紅外線熱輻射所產生之溫度變化轉換為電容變化。有別於其他常見的紅外線熱感測器，本研究期望在感熱結構製作上省去了額外的沉積，做出一個高響應度高偵測度的感測陣列，以此驗證電容式雙層材料懸臂樑作為感熱元件的高度發展性。
本研究使用 TSMC 2P4M 0.35 μm 製程，製作了16 × 16紅外線感測器陣列，透過讀取電路的設計將電容受到熱輻射所產生的溫度變化轉換為輸出電壓。在結構方面利用金屬濕蝕刻、反應離子蝕刻定義了感熱元件結構形狀。經量測後得到電容溫度係數為1.66%/K，感測器的熱時間常數6.4 ms，而響應度與雜訊等效功率(NEP)則分別為1.4 × 106 V/W以及1.57 pW/Hz1/2。

In this study, an infrared focal plane array was fabricated with a standard CMOS process, and the capacitive bimorph cantilevers were used as sensing elements. The sensing principle relies on converting the temperature variation generated by absorbing infrared radiation into a change in capacitance. Distinguished from other common infrared sensors, this research aims to eliminate additional deposition in fabrication of the thermal sensing structure and achieve a high responsivity and detection for the sensing array. This serves to validate the high development potential of the capacitive bimorph cantilver as a thermal sensing element.
In this study, the TSMC 2P4M 0.35 μm process was used to fabricate an 16 × 16 infrared sensors array. The variation in capacitance with temperature by infrared radiation was converted into output voltage through a readout circuit. In terms of structure, the shape of the thermal sensing element was defined using metal wet etching and reactive ion etching. The measured temperature coefficient of capacitance (TCC) is 1.66%/K. The thermal time constanct is 6.4ms, and responsivity and noise equivalent power (NEP) can respectively reach 1.4 × 106 V/W and 1.57 pW/Hz1/2 .

目錄
摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VII
表目錄 X
第一章 緒論 1
1-1 前言 1
(一) 紅外線熱感測簡介 2
(二) 感測機制簡介 3
1-2 文獻回顧 4
(一) 熱阻式感測器 4
(二) 熱電式感測器 5
(三) 焦電式感測器 6
(四) 電晶體式感測器 6
(五) 電容式感測器 7
1-3 研究動機 8
第二章 電容式雙層材料懸臂樑熱感測原理 10
2-1 感測原理 10
(一) 熱輻射原理 10
(二) 感測原理 11
2-2 規格參數 12
(一) 響應度 12
(二) 雜訊等校溫差 12
(三) 電容溫度係數 13
(四) 偵測度 13
(五) 熱時間常數 13
第三章 設計與模擬 16
3-1 元件設計 16
(一) 感測電容參數設計 16
(二) 結構與佈局設計 18
(三) 後製程步驟 22
3-2 元件模擬 26
(一) 溫度感測模擬 26
(二) 結構振頻模擬 29
(三) 熱時間常數模擬 30
(四) 材料吸收率模擬 31
3-3 電路設計 33
(一) 整體電路架構 33
(二) 讀取電路 37
(三) 取樣保持電路 39
(四) 移位暫存器 40
3-4 電路模擬 42
第四章 實驗結果與分析 45
4-1 結構特性量測 45
(一) 光學顯微鏡量測 45
(二) 白光干涉儀量測 47
4-2 電路量測 50
(一) 量測設備架構 50
(二) 結構振頻量測 52
(三) 溫度變化量測 53
(四) 紅外線量測 58
(五) 熱時間常數量測 63
(六) 壓力變化量測 65
(七) 噪聲量測 66
第五章 結論與未來工作 68
5-1 研究結果討論 68
5-2 未來工作 70
(一) 元件佈局設計改良 70
(二) 電路改良 70
參考文獻 71

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