隨著製程的技術節點進一步微縮至奈米級別，先進的微影系統在推動CMOS電路的關鍵尺寸向下一代技術節點演進起著至關重要的作用。其中深紫外光(Deep Ultraviolet, DUV)和極紫外光(Extreme Ultraviolet, EUV)及電子束(Electron Beam, e-beam)等能源變得不可或缺。為確保IC製程量產的良率，開發與其相關的感測器顯得日益重要。傳統的電子束感測技術包括光纖閃爍電子感測器(Fiber-Optic Scintillating Detector)和固態電子感測器(Solid State Detector, SSD)等，但上述感測器皆因為微縮限制或相容問題等因素不易應用於感測先進製程光源系統。
在本論文當中，提出了一種相容於鰭式電晶體製程，用於電子束感測的新型三維堆疊感測器陣列。在結構的設計上，將感測金屬板堆疊為立方陣列，並連接至接觸槽透過電容耦合的方式，將收集電子產生的高負電壓耦合至浮動閘極，影響浮動閘極之電壓。透過離線(Off-line)讀取，即可在完全無外加電源的情況下，感測出所相對應的電子劑量。最後，本研究基於感測電子模型提出一校正固定圖像雜訊(Fix Pattern Noise, FPN)的方法，將讀取訊號轉換為感測金屬板實際儲存的電荷，增加感測入射電子分布的精準度。
本研究針對之前提出之三維堆疊感測器陣列，利用自製的鋁箔遮罩，進行不同遮罩圖案下的電子束照射實驗，以此分析不同圖形下感測器的偵測精準度，此外藉由校正模型，能更精確反映電子束微影製程中的曝光條件，進而改良電子束製程過程的精準控制。

As the technology node scales to the nanometer regime, advanced lithography systems play a crucial role in pushing forward the critical dimensions in CMOS circuits to next technology nodes, in which energy sources such as DUV/EUV and e-beam become indispensable. To ensure the high product yield in mass-production of lithography systems, the development of relevant detectors is important for monitoring electron distributions after e-beam exposure. Conventional e-beam detection techniques include fiber-optic scintillating detectors and solid-state detectors etc., but these detectors cannot be readily integrated in lithography chambers.
A novel 3D e-beam detector array, compatible with CMOS FinFET technology has been proposed for e-beam sensing. The energy sensing pads are designed to stack in a cubic array and connected to the slot contact coupling structure, which couples the high negative voltage generated by collecting incident electrons to floating gate. Through off-line reading after exposure, the corresponding electron distribution profile can be built without any external power supply. Finally, based on the sensing model, a correction scheme is proposed to correct the fixed pattern noise (FPN) in the array, which improves the accuracy of detected electron distribution.
This study focuses on the 3D e-beam detector array previously proposed, aiming to evaluate the detection accuracy of the detectors by examining the electron distribution profile under various metal shield patterns. Moreover, an FPN correction scheme is developed to accurately reflect the exposure conditions in e-beam lithography, thereby enhancing control over the systems.

摘要 I
ABSTRACT II
致謝 III
內文目錄 IV
附圖目錄 VI
附表目錄 VIII
第一章 序論 1
1.1研究動機 2
1.2論文大綱 3
第二章 電子束感測技術回顧與發展 5
2.1 光纖閃爍電子感測器 5
2.2固態電子感測器 6
2.3 鐵電晶體電子劑量感測器 7
2.4 金屬絕緣層金屬耦合浮動閘極垂直電子感測器 8
2.5 小結 9
第三章 三維電子束感測陣列結構與機制 14
3.1 三維堆疊陣列結構介紹 14
3.2 浮動閘極操作機制回顧 15
3.3 三維堆疊陣列感測機制與耦合結構設計 19
3.4 電子束能量與散射模擬 20
3.5 小結 21
第四章 三維電子感測陣列之量測與分析 33
4.1 實驗參數設定及量測環境設置 33
4.2 基本電性量測分析 35
4.3 不同電子束能量照射下之實驗結果 37
4.4 感測器之固定圖像雜訊分析 38
4.5不同感測金屬厚度下之感測能力 44
4.6其他耦合方式之可行性 44
4.7 小結 46
第五章 總結 65
5.1 現行感測陣列與過往感測方法之比較 65
5.2 結語與未來展望 66
參考文獻 68

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