為了讓機器或是機器人具有更多的感測功能以勝任更加困難的事情，或是防止其感測器損壞，整合多功能感測器的發展也越來越重要，透過CMOS標準製程來設計感測晶片也能夠同時兼具體積小以及成本低的優勢。
本研究使用台積電0.35 μm 2P4M CMOS製程，實際晶片大小為7.52 mm × 7.52 mm，利用硫酸與四甲基氫氧化銨(TMAH)濕蝕刻等後製程步驟，來達到CMOS的高整合度以實現32 × 32 CMOS MEMS壓阻式觸覺陣列與電容式近接感測器，每個感測元件由多晶矽與介電層組合而成，並將陣列的頂層鋪上金屬後串聯在一起以形成電容的兩電極。實驗時會透過探針下壓以及自製的印章來改變壓阻阻值，以及利用鋁箔紙來測試近接感測的距離，之後再各自透過晶片上的電路來獲得其電訊號的改變，最後利用Labview以及擷取卡來獲得資料，量測後的資料與COMSOL的模擬趨勢一致。
觸覺感測的結構為100 μm × 100 μm，陣列單元間距約為176 μm。晶片在觸覺感測操作頻率為20 kHz、近接感測為2 kHz的情況下，觸覺感測度為0.67  0.2 mV/kPa，解析度則為58.2  20 Pa。近接感測的最遠距離則達到900 μm，其解析度依照距離不同分別為0.57 μm(>400 μm)以及0.086 μm(<400 μm)。

To enable machines or robots to have more sensing capabilities for tackling more challenging tasks or preventing damage to their sensors, the development of integrated multifunctional sensors has become increasingly important. Designing sensor chips through the CMOS standard process can simultaneously provide the advantages of small size and low cost.
In this study, we utilized TSMC 0.35 μm 2P4M CMOS process, resulting in an actual chip size of 7.52 mm × 7.52 mm. Post-processing steps such as wet etching with sulfuric acid and TMAH were employed to achieve high integration of CMOS. This allowed the realization of a 32 × 32 CMOS MEMS resistive tactile array and capacitive proximity sensor. Each sensing element is composed of polysilicon and dielectric layers, with the top layer of the array coated with metal, connecting together to form the two electrodes of the capacitor. During experiments, piezoresistance values were altered through probe compression and a custom-made stamp, and aluminum foil was used to test the proximity sensing distance. The changes in electrical signals were then obtained through the circuitry on the chip, and data was acquired using Labview and a data acquisition card. The measured data showed consistent trends with COMSOL simulations.
The tactile sensing structure had dimensions of 100 μm × 100 μm, with an inter-element spacing of approximately 176μm. The chip demonstrated tactile sensing at an operational frequency of 20 kHz and proximity sensing at 2 kHz. The sensitivity was measured at 0.67 ± 0.2 mV/kPa, and the resolution was 58.2 ± 20 Pa. The maximum distance for proximity sensing reached 900 μm. The resolution varied depending on the distance, with 0.57 μm(>400 μm) and 0.086 μm(<400 μm).

摘要--------------------------I
Abstract---------------------II
誌謝-------------------------III
目錄-------------------------IV
圖目錄-----------------------VII
表目錄-----------------------XI
第一章 緒論----------------1
1-1 前言------------------1
1-2 觸覺感測器發展與應用----2
1-3 文獻回顧---------------3
1-3-1觸覺壓阻感測器-----------4
1-3-2觸覺電容感測器-----------5
1-3-3近接感測器---------------5
1-3-4多整合感測器-------------6
1-4 研究動機---------------7
第二章 感測器結構設計與模擬--9
2-1 感測結構原理及設計------9
2-1-1壓阻效應-----------------9
2-1-2壓阻結構設計-------------11
2-1-3近接結構設計-------------14
2-2 結構模擬---------------16
2-2-1共振模態模擬-------------17
2-2-2結構穩態模擬-------------18
2-2-3電容模擬-----------------21
第三章 感測電路設計與模擬---26
3-1 感測電路設計-----------27
3-1-1 壓阻感測電路設計--------27
3-1-2 近接感測電路設計--------34
3-2 感測電路模擬-----------38
3-2-1 壓阻感測電路模擬--------38
3-2-2 近接感測電路模擬--------43
第四章 晶片製作與實現-------46
4-1 佈局考量---------------46
4-2 後製程施作-------------49
4-3 電路板設計-------------55
第五章 量測結果與討論-------57
5-1 結構量測---------------57
5-1-1 微觀量測----------------57
5-1-2 結構振頻量測------------58
5-1-2 結構彈簧量測------------61
5-2 壓阻量測---------------62
5-2-1 壓阻電路量測------------63
5-2-2 探針量測----------------65
5-2-3 感測度量測--------------67
5-2-4 印章量測----------------71
5-3 壓阻噪聲量測-----------72
5-3-1 頻譜噪聲量測------------72
5-3-2 Allan方差量測-----------73
5-4 近接電路量測-----------74
5-4-1 電路量測----------------74
5-4-2 近接感測量測-------------75
第六章 結論與未來工作--------78
6-1 研究結果---------------78
6-2 未來工作---------------78
參考文獻----------------------80

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