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作者(中文):胡仲緯
作者(外文):Hu, Chung-Wei
論文名稱(中文):利用六標準差設計提高半導體長晶製程良率之研究
論文名稱(外文):Utilizing Design for Six Sigma to Improve Yield of Semiconductor Crystal Growth Process
指導教授(中文):邱銘傳
桑慧敏
指導教授(外文):Chiu, Ming-Chuan
Song, Whey-Ming
口試委員(中文):陳勝一
劉建良
學位類別:碩士
校院名稱:國立清華大學
系所名稱:工業工程與工程管理學系碩士在職專班
學號:110036525
出版年(民國):112
畢業學年度:111
語文別:中文
論文頁數:56
中文關鍵詞:長晶製程實驗設計PID控制器模擬軟體良率提升
外文關鍵詞:ingot growth processsix sigma designPID controllersimulation softwareyield improvement
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矽晶棒長晶製程製造的最前端製程,會依照客戶需求生長不同尺寸的晶棒,在指定矽晶棒尺寸的要求下,生長直徑的控制就非常重要,在良率高的情況能夠得到相對較低成本獲得更高的營收獲利,同時也可以穩住客戶的訂單需求,若良率低的情況下則會造成產能排程的擠壓,需要開更多的爐數來進行生長產出,成本高的情況在業界的產品競爭力會下降,且產品無法順利達交造成客戶訂單的流失,所以生長直徑不足會造成低良率及營收獲利與客戶訂單的損失。
長晶的製程有很多參數能夠控制晶棒生長,本研究運用六標準差設計的架構,首先將問題定義清楚,並於過程中特性要因圖找出相關因子,第一階段進行實驗設計工具進行統計分析,找出對實驗結果正向的參數組合進行確認,再搭配模擬軟體進行模擬驗證,第二階段探討比例-積分-微分(Proportional Integral Derivative, PID)控制器邏輯進行優化,使用三菱電機控制系統進行編輯研究適合參數,在PID控制器上將公式拆解使用Excel檔案進行公式上的驗證,以上兩種方式可用模擬取代實際驗證參數,降低實驗測試的成本與時間縮短,且晶棒不良浪費減少,廠內總共有A~J等產品,單以A產品製程月營收可增加約2.2百萬臺幣/月,同步提升機台有效產能利用,且每月需交付的產量皆能順利達交,後續平行展開至其它產品,達到公司與市場雙贏局面。
The front-end process of silicon ingot growth process will grow ingots of different sizes according to customer needs. Under the requirements of the specified silicon ingot size, the control of the growth diameter is very important. The pursuit of of high yield can relatively lower cost to obtain higher profit, and at the same time stabilize customer order demand. On the other hand, if yield rate is low, it will cause the squeeze of capacity scheduling, and more furnaces should be opened for growth and production. With higher cost, the competitiveness of products in the industry will decline, and the failure of smoothly deliver products would cause the loss of customer orders.
There are many parameters in the crystal growth process that can control the growth of the ingot. This study adopts the framework of the six sigma design. First, the problem is clearly defined, and the relevant factors are found in the characteristic factor diagram of the process. The next stage is the experimental design tool for statistics Analyze and find out the parameter combination that is positive to the experimental results for confirmation. Simulation software is then used for verification. This surtdy further discusses the proportional-integral-derivative (Proportional Integral Derivative, PID) controller logic optimization using the Mitsubishi Electric control system Edit and study the suitable parameters, disassemble the formula on the PID controller and use the Excel file to verify the formula. The above two methods can be used to replace the actual verification parameters with simulation, which can reduce the cost and time of experimental testing, and the waste of bad ingots. There are a total of A~J products in the factory, and the monthly revenue of product A alone can increase by about 2.2 million NTD/month, and simultaneously improve the effective capacity utilization of the machine with smoothly delivery tempo that achieves a win-win situation for the company and the market.
摘要 II
ABSTRACT III
誌謝 V
目錄 VI
圖目錄 1
表目錄 3
第一章 緒論 4
1.1 研究背景 4
1.2 研究動機 5
1.3 研究目的 6
1.4 研究架構 7
第二章文獻回顧 8
2-1 單晶生長製程 8
2-2 實驗設計 12
2-3 PID控制器 16
第三章 研究方法 19
3-1 定 義 20
3-2 量 測 21
3-3 分 析 23
3-4 改 善 26
3-5 控 制 27
第四章 個案分析 29
4-1個案背景 29
4-1-1製程說明 30
4-1-2生長爐的組成元件 31
4-2六標準差設計 34
4-2-1定義(Define) 34
4-2-2衡量(Measure) 34
4-2-3分析(Analyze) 36
4-2-4改善(Improve) 41
4-2-5 實際投入結果 46
4-2-6控制(Control) 49
第五章結論與未來研究方向 50
5-1結 論 50
5-2研究限制 50
5-2未來研究方向 50
參考文獻 52
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網路資源部分:
1.全球半導體矽晶圓需求量(富士經濟, 2022) (https://www.moea.gov.tw/MNS/doit/industrytech/IndustryTech.aspx?menu_id=13545&it_id=436)
2.矽晶圓未來趨勢(https://www.inside.com.tw/article/25155-sas-globalwafers-long-term-chip-orders-2022)
3.DMAIC解說 (https://experience.dropbox.com/zh-tw/resources/dmaic)
4.晶體製造解說(https://zh.wikipedia.org/wiki/%E6%99%B6%E5%9C%93#%E8%A3%BD%E9%80%A0%E9%81%8E%E7%A8%8B)
5.實驗設計解說 (http://www.tynesys.com/doe/index.html)
6.模擬熱場圖面 (https://xueqiu.com/4886417478/165019366)
7.特性要因分析圖 (https://www.researchmfg.com/2012/03/cause-effect-analysis/)
8.矽晶圓製造業資源化應用技術手冊(https://riw.tgpf.org.tw/ReadFile/?p=Publish&n=06bb70d3-04c8-4029-9d02-654db04da568.pdf)
(此全文20280706後開放外部瀏覽)
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