近年來，由於銀具有理想的電阻率和良好的抗氧化能力，成爲半導體產業中的理想材料。而本實驗室也成功發展出使用具有高(111)優選方向之濺鍍奈米雙晶銀薄膜，透過雙晶結構使銀薄膜具有更佳的機械性質並保持銀本身的良好導電性。
隨著半導體產業元件微縮的趨勢下，在製程上對於熱預算控制便成為一個重要的議題。相較傳統的爐退火方法，雷射退火為一種有前景的退火方法，透過雷射加熱可以達到快速且局部地改善材料的性質。在本實驗中，使用PM25雷射對奈米雙晶銀薄膜進行雷射退火。透過測試不同的雷射退火參數，如雷射功率、雷射退火時間等，將實驗分為低功率較長時間的雷射退火(3、5分鐘)以及高功率較短時間(4至10秒)的雷射退火。藉由雷射退火我們能夠更進一步降低奈米雙晶銀薄膜的電阻率，而在經雷射退火功率24.35 W退火5分鐘的薄膜電阻率最多能降低超過20 %。FIB影像顯示經過雷射退火後，銀薄膜透過異常晶粒生長形成類單晶的結構。EBSD和XRD分析結果顯示，在退火過程中銀薄膜之晶向由（111）轉變為（200）的異常大晶粒。最後，我們將進一步研究雷射退火對銀薄膜物理性質如硬度和表面粗糙度的影響。
實驗結果表明，雷射退火是一種節省時間的退火方法，有助於在短時間內使薄膜具有更好的導電性和理想的微結構。此外，本研究將詳細探討雷射退火導致薄膜發生異常晶粒生長的現象，並探討雷射退火改變薄膜物理性質如電阻率、表面粗糙度和硬度的機制。

Silver has become an ideal material in the semiconductor industry in
recent years due to its desirable electrical resistivity and excellent oxidation resistance. We have successfully developed highly-(111) preferred nano-twinned Ag thin films by sputtering. Incorporating a twin crystal structure in the silver films enhances their mechanical properties while retaining the high electrical conductivity of silver.
With the continuous scaling in the semiconductor industry, precise control of thermal budgets has become a critical issue of the fabrication process. Compared with conventional furnace annealing, laser annealing is a promising method that can rapidly and locally improve material properties. In this study, a PM25 laser was used to anneal nanocrystalline silver thin films. By varying the laser annealing parameters such as laser power and annealing time, we have two sets of experiments involving low-power long-duration annealing (3 and 5 minutes) and high-power short-duration annealing (4 to 10 seconds). Laser annealing allowed us further to reduce the resistivity of the nanocrystalline silver films. The results show that after laser annealing at a laser power of 24.35 W for 5 minutes, the film resistivity can be reduced by more than 20%. FIB images revealed that the silver films transformed into single-grain-like structures through abnormal grain growth induced by laser annealing. Electron Back Scatter Diffraction and X-ray Diffraction analyses indicated that the crystallographic orientation changes from (111) to (200) abnormal giant grains during annealing. Furthermore, the influence of laser annealing on the physical properties of the silver films, such as hardness and surface roughness, were also investigated and the corresponding mechanism was elucidated. This study successfully demonstrates that laser annealing is a time-saving annealing method to improve electrical conductivity and achieve ideal microstructures in thin films within a short time.

摘要 i
Abstract ii
致謝 iv
目錄 vi
表目錄 x
圖目錄 xi
1 第一章 緒論 21
2 第二章 文獻回顧 24
2.1 濺鍍沉積 24
2.1.1 濺鍍原理 24
2.1.2 非平衡磁控濺鍍 25
2.2 奈米雙晶薄膜 26
2.2.1 奈米雙晶理論 27
2.2.2 奈米雙晶薄膜性質 29
2.2.3 奈米雙晶薄膜製程 32
2.3 奈米雙晶銀薄膜異常晶粒成長 35
2.4 雷射退火熱處理 37
3 第三章 實驗方法 41
3.1 磁控濺鍍 42
3.2 雷射退火處理 44
3.2.1 雷射熱處理系統架設 44
3.2.2 雷射熱處理系統能量測定 47
3.2.3 試片載台設計與熱電偶於試片上之定位 49
3.2.4 雷射退火處理 51
3.3 材料分析 52
3.3.1 薄膜微結構分析及厚度量測: 聚焦離子束/掃描式電子顯微鏡（FIB/SEM） 52
3.3.2 薄膜表面微結構分析: 高解析熱場發射掃描式電子顯微鏡（HRFEG-SEM） 53
3.3.3 薄膜電阻率量測: 四點探針 (Four-Point Probe) 54
3.3.4 薄膜表面晶向分析: 電子背向散射繞射儀（EBSD） 56
3.3.5 薄膜優選方向及晶體結構分析：X光繞射儀(XRD) 59
3.3.6 薄膜表面粗糙度/形貌量測: 掃描探針顯微鏡 (SPM) 61
3.3.7 薄膜硬度量測分析：高精度奈米壓痕機械性質分析儀(Nanoindenter) 62
4 第四章 實驗結果 65
4.1 初沉積奈米雙晶銀薄膜之微結構與物理性質 65
4.2 奈米雙晶銀薄膜經低功率雷射退火熱處理之微結構及物理性質分析 70
4.2.1 奈米雙晶銀薄膜經低功率雷射退火熱處理之微結構變化 70
4.2.2 奈米雙晶銀薄膜經低功率雷射退火熱處理之表面晶向變化 78
4.2.3 奈米雙晶銀薄膜經低功率雷射退火熱處理之電阻率變化 108
4.2.4 奈米雙晶銀薄膜經低功率雷射退火熱處理之表面粗糙度變化 109
4.2.5 奈米雙晶銀薄膜經低功率雷射退火熱處理之硬度及楊氏模數變化 115
4.3 奈米雙晶銀薄膜經高功率雷射退火熱處理之微結構及物理性質分析 119
4.3.1 奈米雙晶銀薄膜經高功率雷射退火熱處理之微結構變化 119
4.3.2 奈米雙晶銀薄膜經高功率雷射退火熱處理之表面晶向變化 126
4.3.3 奈米雙晶銀薄膜經高功率雷射退火熱處理之電阻率變化 155
4.3.4 奈米雙晶銀薄膜經高功率雷射退火熱處理之硬度及楊氏模數變化 156
5 第五章 討論 159
5.1 奈米雙晶銀薄膜於雷射退火下的晶粒成長 159
5.1.1 普通晶粒成長 159
5.1.2 異常晶粒成長 163
5.1.3 升溫速率對於異常晶粒成長的影響 169
5.1.4 孔洞生成 173
5.1.5 形變雙晶 175
5.2 雷射退火過程中微結構變化對奈米雙晶銀薄膜造成的物理性質影響 176
5.2.1 薄膜電阻率變化 176
5.2.2 薄膜表面粗糙度變化 177
5.2.3 薄膜硬度變化 182
5.3 雷射退火過程中的熱遷移現象 186
5.3.1 溫度梯度量測 186
5.3.2 模擬雷射退火過程之溫度梯度 188
6 六章 結論 189
7 Reference 191

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