傳統雙極電晶體的電流增益可以藉由減小基極寬度來增加，但隨著元件的尺寸越做越小，將會出現許多不可避免的效應。當傳統的雙極性電晶體操作於主動區時，基極的有效寬度會因為基極與汲極逆向偏壓變大導致空乏區變大而減小，面臨的問題是當基極越做越薄時，空乏區幾乎佔據了所有基極區，而當基極有效寬度趨近於零時，少數載子的濃度梯度會大幅上升，形成極大的擴散電流造成電晶體的燒毀，此稱之為雙極性電晶體的擊穿崩潰效應(Punch through)。雖然使用增加基極濃度的方式確實可以抑制擊穿效應，但同時也會減少射極的載子發射效率而造成增益下降。
將雙極性電晶體變形為以金屬或類金屬材料為基極的單極性半導體-金屬-半導體電晶體可以避開上述問題。過去本實驗室曾經以石墨烯為基極材料成功製作出這種三端元件，但因基極-集極接面能障較小導致過多的逆向漏電流，因此本篇論文研究採用矽基板作為集極、金屬材料白金(Platinum)和氧化鋅個別作為基極與射極製成的半導體-金屬-半導體電晶體(Metal Base Transistor)，本論文實驗將鉑金鍍的非常薄(約2~3奈米)，用以減少載子在基極中被複合及增加光穿透金屬到達矽基板被吸收的機率，同時使用金屬作為基極可以避開擊穿崩潰效應，並且期望透過白金的高功函數阻擋漏電。在實驗結果上顯示了在低偏壓的操作下，本實驗製作的電晶體共射極電流增益 (Common-emitter current gain) β可到達2000左右，共基極電流增益(Common-base current gain)α則趨近於1，作為基極浮接(base-floating)光電晶體的表現上比光二極體結構擁有百倍的增益。

The current gain of traditional bipolar junction transistors can be increased by reducing the base width. However, there are many unavoidable effects as the size of the devices decrease. When a traditional bipolar junction transistor is operated in the active region, the effective width of the base decreases because of the reverse bias between the base and the collector increases. When the base becomes thinner, the depletion region fills almost all the base regions. When the effective width of the base reaches zero, the concentration gradient of minority carriers increases significantly, resulting in a large diffusion current that causes the damage of the transistor. This phenomenon is the punch through effect of bipolar junction transistors. Although punch through effect can be suppressed by increasing the base concentration, it also reduces the carrier emission efficiency of the emitter and results in a decrease in the gain.
Changing a bipolar transistor to a unipolar semiconductor-metal-semiconductor transistor with a metal or metal-like material as the base can avoid these problems. In the past, this three-terminal device has been successfully fabricated using graphene as the base material in our laboratory. But the small barrier of the base-collector interface results in excessive reverse leakage current. Therefore, this paper studies semiconductor-metal-semiconductor transistors (Metal Base Transistors) using silicon substrate as collector, platinum and zinc oxide as base and emitter. In this study, platinum plating is extremely thin (about 2-3 nanometers). It reduces the recombination of carriers in the base. Also, it increases the light to penetrate through the metal and reaches the silicon substrate to be absorbed. Besides, using the metal as the base can avoid the punch through effect and expect to reduce leakage current through the high work function of Platinum. The results show that the common-emitter current gain (β) can reach about 2000 in low bias and common-base current gain (α) is close to 1. As a base-floating phototransistor, it has a hundred times gain compared to the two-terminal device.

摘要 I
Abstract II
致謝 IV
目錄 VI
圖目錄 IX
表目錄 XIII
第一章 緒論-----------------------------------------------------1
1.1 前言-------------------------------------------------------1
1.2 研究動機---------------------------------------------------2
1.3 文章節架構-------------------------------------------------4
第二章 文獻回顧-------------------------------------------------5
2.1 半導體與金屬之接面------------------------------------------5
2.2.1 蕭特基接觸(Schottky Contacts)與歐姆接觸(Ohmic Contacts)---5
2.2 雙極性電晶體基本介紹----------------------------------------10
2.3 金屬基極電晶體的介紹----------------------------------------11
2.3.1 金屬基極電晶體理論----------------------------------------12
2.4 光感測器基本介紹--------------------------------------------15
2.4.1 光導體原理------------------------------------------------16
2.4.2 光電二極體原理--------------------------------------------16
2.4.3 雙極性光電晶體原理----------------------------------------17
2.5 光感測器參數介紹--------------------------------------------19
2.5.1 量子效率(Quantum efficiency)-----------------------------19
2.5.2 響應度(Responsivity)-------------------------------------21
2.5.3 暗電流與雜訊 (Dark current & Noise)----------------------22
2.6 材料選擇及特性介紹------------------------------------------23
2.6.1 氧化鋅的基本性質------------------------------------------23
2.6.2 氧化鋅的結構---------------------------------------------24
2.6.3 白金的基本性質--------------------------------------------25
2.7 薄膜沉積方式的選擇及介紹-------------------------------------25
2.7.1 常見的氧化鋅成長方式--------------------------------------25
2.7.2 原子層沉積技術介紹----------------------------------------26
2.7.3 原子層沉積製程--------------------------------------------26
2.7.4 常見的金屬鍍膜方式----------------------------------------28
2.7.5 超高真空金屬與金屬氧化物奈米級薄膜濺鍍系統------------------30
2.8 常見的材料分析----------------------------------------------31
2.8.1 X光薄膜檢測技術-------------------------------------------31
2.8.2 X光繞射儀(X-ray Diffraction, XRD)-------------------------32
2.8.3 X光反射儀(X-ray Reflectivity, XRR)------------------------33
2.8.4 穿透式電子顯微鏡(Transmission Electron Microscopy,TEM)-----34
第三章 元件設計與製作--------------------------------------------37
3.1 雙端元件—n型矽基板/白金--------------------------------------37
3.1.1 元件設計與架構---------------------------------------------37
3.1.2 元件製程--------------------------------------------------37
3.2 雙端元件—氧化鋅/白金-----------------------------------------38
3.2.1 元件設計與架構---------------------------------------------38
3.2.2 元件製程--------------------------------------------------39
3.3 三端元件—氧化鋅/白金/ n型矽基板-------------------------------39
3.3.1 元件設計與架構---------------------------------------------39
3.3.2 元件製程---------------------------------------------------40
第四章 量測結果與討論---------------------------------------------42
4.1 量測儀器介紹-------------------------------------------------42
4.2 量測結果與討論-----------------------------------------------43
4.2.1 雙端元件—n型矽基板/白金------------------------------------43
4.2.3 三端元件—氧化鋅/白金/n型矽基板------------------------------60
4.2.4 雙端元件與三端元件之照光量測比較---------------------------- 69
第五章 結論------------------------------------------------------72
參考文獻---------------------------------------------------------73

[1] 吳承平, "新穎矽/石墨烯/單層氧化鋅異質接面電晶體之製作與特性研究," 國立清華大學, 碩士論文, 2019.
[2] 孫晨維, "矽/石墨烯/氧化鋅異質接面電晶體之研究," 國立清華大學, 碩士論文, 2018.
[3] E. Rosencher, S. Delage, F. A. Davitaya, C. Danterroches, K. Belhaddad, and J. C. Pfister, "REALIZATION AND ELECTRICAL-PROPERTIES OF A MONOLITHIC METAL-BASE TRANSISTOR - THE SI/COSI2/SI STRUCTURE," Physica B & C, vol. 134, no. 1-3, pp. 106-110, 1985.
[4] E. Rosencher, "The Metal Base Transistors," in The Physics and Fabrication of Microstructures and Microdevices, Berlin, Heidelberg, M. J. Kelly and C. Weisbuch, Eds., 1986, pp. 425-434.
[5] C. R. Crowell and S. M. Sze, "Current transport in metal-semiconductor barriers," Solid-State Electronics, vol. 9, no. 11, pp. 1035-1048, 1966.
[6] S. M. Sze, C. R. Crowell, G. P. Carey, and E. E. LaBate, "Hot‐Electron Transport in Semiconductor‐Metal‐Semiconductor Structures," Journal of Applied Physics, vol. 37, no. 7, pp. 2690-2695, 1966.
[7] S. M. Sze and H. K. Gummel, "Appraisal of semiconductor-metal-semiconductor transistor," Solid-State Electronics, vol. 9, no. 8, pp. 751-769, 1966.
[8] C. Y. Chang and S. M. Sze, "Carrier transport across metal-semiconductor barriers," Solid-State Electronics, vol. 13, no. 6, pp. 727-740, 1970.
[9] R. G. Delatorre et al., "p-type metal-base transistor," Applied Physics Letters, vol. 88, no. 23, 2006.
[10] J. E. Rauch, M. Gersten-Rauch, and A. Burger, "Parallel biased GaAs photoconductive detector," in Conference on Hard X-Ray and Gamma-Ray Detector Physics V, San Diego, CA, Aug 04-05 2003, vol. 5198, in Proceedings of the Society of Photo-Optical Instrumentation Engineers (Spie), 2004, pp. 334-341.
[11] M. Tyagi, M. Tomar, and V. Gupta, "P-N Junction of NiO Thin Film for Photonic Devices," Ieee Electron Device Letters, vol. 34, no. 1, pp. 81-83, 2013.
[12] H. Y. Liu and R. C. Huang, "All-Transparent Zinc Oxide-Based Phototransistor by Mist Atmospheric Pressure Chemical Vapor Deposition," Ieee Electron Device Letters, vol. 40, no. 2, pp. 243-246, 2019.
[13] T. Yamashita, T. Shima, Y. Nshizaki, M. Kimura, H. Hara, and S. Inoue, "Evaluation of thin-film photodiodes and development of thin-film phototransistor," Japanese Journal of Applied Physics, vol. 47, no. 3, pp. 1924-1929, 2008.
[14] C. S. Yin, "The p-i-n junction-surface depletion-layer photodiode," IEEE Electron Device Letters, vol. 12, no. 8, pp. 442-443, 1991.
[15] 王鴻偉, " 原子層沉積臨場摻鎵氧化鋅薄膜及其於同型同質接面應用之研究," 國立清華大學, 碩士論文, 2021.
[16] M.-K. L. S. M. Sze, Semiconductor Devices: Physics and Technology. John Wiley & Sons. 2008.
[17] Y. C. Liu, H. Y. Xu, C. Y. Liu, and W. Z. Liu, "Recent progress in ZnO-based heterojunction ultraviolet light-emitting devices," Chinese Science Bulletin, vol. 59, no. 12, pp. 1219-1227, 2014.
[18] "氧化鋅之結構." [Online]. Available: https://zh.wikipedia.org/zh-tw/%E6%B0%A7%E5%8C%96%E9%8B%85.
[19] "鉑." [Online]. Available: https://zh.wikipedia.org/zh-tw/%E9%93%82.
[20] J. G. Lu, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, and S. Fujita, "ZnO-based thin films synthesized by atmospheric pressure mist chemical vapor deposition," Journal of Crystal Growth, vol. 299, no. 1, pp. 1-10, Feb 2007.
[21] H. D. Tang, Z. R. Huang, and S. B. Tan, "PVD SiC and PVD Si coatings on RB SiC for surface modification," in 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, Xian, CHINA, 2005, vol. 6149.
[22] M. Jelínek et al., "Conductive Gas Sensors Prepared Using PLD," in Nanotechnological Basis for Advanced Sensors, Dordrecht, 2011: Springer Netherlands, pp. 391-399.
[23] S. Ahmed, N. D. M. Sin, M. N. Berhan, and M. Rusop, "Sensitivity of ZnO based NH3 Sensor by RF Magnetron Sputtering," in International Conference on Advanced Materials Engineering and Technology (ICAMET 2012), Penang, MALAYSIA, 2012, vol. 626, in Advanced Materials Research, pp. 168-172.
[24] 曾柏憲, "利用原子層沉積法成長出高品質摻鋁氧化鋅薄膜於矽光學元件之應用," 國立新竹教育大學, 碩士論文, 2016.
[25] S. S. Mundra, S. S. Pardeshi, S. S. Bhavikatti, and A. Nagras, "Development of an integrated physical vapour deposition and chemical vapour deposition system," in 28th International Conference on Processing and Fabrication of Advanced Materials (PFAM), Chennai, INDIA, 2020, vol. 46, pp. 1229-1234.
[26] L. Lizarraga, M. Guth, A. Billard, and P. Vernoux, "Electrochemical catalysis for propane combustion using nanometric sputtered-deposited Pt films," Catalysis Today, vol. 157, no. 1-4, pp. 61-65, 2010.
[27] D. M. Mattox, "Ion plating - past, present and future," Surface & Coatings Technology, vol. 133, pp. 517-521, 2000.
[28] "Endura® Clover® MRAM PVD," 2022. [Online]. Available: https://www.appliedmaterials.com/tw/zh_tw/product-library/endura-clover-mram-pvd.html.
[29] 余樹楨, 晶體之結構與性質. 渤海堂文化, 2009.
[30] 徐光亮, "X射線反射法分析ZnO的薄膜厚度、密度及表面粗造度," 2010. [Online]. Available: http://www.mat-test.com/ViewFull0.htm?aid=OJ151014001121kQnTqW.
[31] M. Yasaka, "X-ray thin-film measurement techniques," 2010. [Online]. Available: https://www.eng.uc.edu/~beaucag/Classes/Characterization/ReflectivityLab/X-ray%20thin-film%20measurement%20techniques_V_X-ray%20reflectivity%20measurement.pdf.
[32] 洪連輝, "穿透式電子顯微鏡 (Transmission Electron Microscopy：TEM)," 2009. [Online]. Available: https://highscope.ch.ntu.edu.tw/wordpress/?p=1599.
[33] B. J. K. a. H. M. M. D. Sumanth Kumar, Quantum Nanostructures(QDs): An Overview. 2018.
[34] J. Chrzanowski and B. Bieg, "Thickness dependence of the work function in case of ultra-thin metallic layers," Applied Surface Science, vol. 540, Feb 2021.
[35] R. S. Markiewicz and L. A. Harris, "TWO-DIMENSIONAL RESISTIVITY OF ULTRATHIN METAL-FILMS," Physical Review Letters, vol. 46, no. 17, pp. 1149-1153, 1981.
[36] R. H. J. Vervuurt, W. M. M. Kessels, and A. A. Bol, "Atomic Layer Deposition for Graphene Device Integration," Advanced Materials Interfaces, vol. 4, no. 18, p. 1700232, 2017.
[37] L. J. Brillson and Y. C. Lu, "ZnO Schottky barriers and Ohmic contacts," Journal of Applied Physics, vol. 109, no. 12, 2011.
[38] C. A. Mead, "Metal-semiconductor surface barriers," Solid-State Electronics, vol. 9, no. 11, pp. 1023-1033, 1966.
[39] H. L. Mosbacker et al., "Role of subsurface defects in metal-ZnO(0001) Schottky barrier formation," Journal of Vacuum Science & Technology B, vol. 25, no. 4, pp. 1405-1411, 2007.
[40] K. Ip et al., "Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO," Applied Physics Letters, vol. 84, no. 15, pp. 2835-2837, 2004.
[41] S. H. Kim, H. K. Kim, and T. Y. Seong, "Electrical characteristics of Pt Schottky contacts on sulfide-treated n-type ZnO," Applied Physics Letters, vol. 86, no. 2, 2005.
[42] M. W. Allen, M. M. Alkaisi, and S. M. Durbin, "Metal Schottky diodes on Zn-polar and O-polar bulk ZnO," Applied Physics Letters, vol. 89, no. 10, 2006.