本論文的電荷泵系統運用了兩種不同架構的電荷泵，使整個系統能在低輸入電壓下運作，並擁有較低的開關導通電阻，此外，頻率回授控制的機制，讓輸出電壓能夠在負載變動的情況下維持穩定。
一般的電荷泵都是在標準電壓1.8 V下運作，若是輸入電壓下降，受臨界電壓的限制，電荷泵的開關便會處於弱導通的狀態，因此傳統電荷泵在低輸入電壓的情況下很難順利升壓。為解決此問題，本論文提出的低壓電荷泵利用不同的偏壓方式加強了開關的導通程度，使電荷泵能夠在低操作電壓下順利升壓。
除此之外，過去文獻中的電荷泵還存在時脈重疊時有逆流電流，以及開關導通電阻會在電荷傳輸過程中變大等問題。本論文中的高壓電荷泵透過輔助開關與控制時脈的設計解決了上述問題，同時提升了驅動能力和能量效率。
晶片使用TSMC 0.18 μm 1P6M CMOS的製程來製作，尺寸大小為963 μm x 1213 μm。電路的供應電壓為0.56 V、負載電容為10 pF，在負載電流0 μA到 31 μA的條件下，可以達到輸出電壓3.1 V之規格。

This thesis proposes a new charge pump system for low input voltage with low switch on-resistance by utilizing two different charge pump structures in the system. In addition, the frequency feedback control mechanism is used to stabilize the output voltage when the output loading changes.
Usual charge pumps are operated under standard voltage of 1.8 V. If the input voltage drops, the significant threshold voltage of transistors will cause the switches of the charge pump to weakly turn on. Thus, traditional charge pumps are difficult to boost voltage if the input voltage is low. To solve this problem, this thesis proposes a low-voltage charge pump with different biasing method which helps switches to turn on, so that the charge pump can boost voltage successfully under low operating voltage.
Besides, there are some problems in previous charge pumps, such as the reverse current when clocks overlap and the increasing switch on-resistance when the charges are being transferred. In the high-voltage charge pump demonstrated in this thesis, the design of auxiliary switches and control clock not only solves above problems but also improves driving capability and power efficiency.
The chip was fabricated in the TSMC 0.18μm 1P6M CMOS process and its size is 963 μm x 1213 μm. The supply voltage of the circuit is 0.56 V and an output voltage of 3.1 V is achieved when the load capacitance is 10 pF and the load current ranges from 0 μA to 31 μA.

摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vii
表目錄 xi
第一章 緒論 1
1.1 研究背景 1
1.2 研究動機 1
1.3 論文概述 3
第二章 電荷泵原理與相關文獻 4
2.1 電荷泵基本原理 4
2.2 Cockcroft-Walton電荷泵 6
2.3 Dickson電荷泵 8
2.4 消除基板效應式電荷泵 11
2.5 動態偏壓式電荷泵 12
2.6 Latch電荷泵 13
2.7 減少逆流電流式電荷泵 16
2.8 低輸入電壓電荷泵 19
第三章 電路架構與系統規格 22
3.1 電路架構簡介 22
3.2 系統規格 23
3.3 子電路設計 24
3.3.1 低壓電荷泵 24
3.3.2 高壓電荷泵 27
3.3.3 時脈產生器 32
3.3.4 電位轉換器 36
3.3.5 參考電壓源 37
3.3.6 回授電阻 39
3.3.7 放大器 39
3.3.8 壓控震盪器 41
第四章 電路模擬與佈局 45
4.1 子電路模擬結果 45
4.1.1 參考電壓源 45
4.1.2 差值放大器 46
4.1.3 壓控震盪器 47
4.2 系統模擬結果 48
4.2.1 輕載模擬結果(RL=10 MΩ) 49
4.2.2 中載模擬結果(RL=1 MΩ) 55
4.2.3 重載模擬結果(RL=100 kΩ) 60
4.2.4 系統模擬結果整理與分析 65
4.2.5 模擬結果與文獻比較 67
4.3 晶片佈局 68
第五章 晶片量測結果 71
5.1 PCB板設計與環境架設 71
5.2 量測儀器介紹 73
5.3 量測結果 73
5.4 量測問題討論 76
第六章 結論與後續研究建議 79
6.1 結論 79
6.2 後續研究建議 79
參考文獻 80

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