隨著工業的發展，重金屬汙染所帶來的問題也越來越嚴重，人們在日常生活中暴露於重金屬汙染的風險也逐漸增加。如果人們長時間接觸含有重金屬汙染的水、空氣和食物，則容易造成體內中樞神經系統損壞以及臟器功能的損傷，因此隨時監測生活中的重金屬含量成了重要的課題。傳統的重金屬檢測方法包括:電感耦合電漿體質譜法 (ICP-MS)、原子吸收光譜法 (AAS)，這些方法雖然可以用來檢測重金屬，但是它們成本高昂、耗時且相當繁複，因此無法達成及時精準檢測的需求。延伸式閘極離子選擇場效電晶體具備有高靈敏度、偵測範圍廣、低偵測極限、成本低廉以及即時檢測的特性，對於有立即檢測重金屬濃度需求的人來說，是一套方便且有效的系統。為了使感測器具備長壽命週期、廣工作溫度區間以及常溫下能仍正常保存的特性，本研究中專注於感測器的可靠度改善，進行了一系列的測試:感測器最適合保存溫度、感測器12個月壽命週期的規格分析以及在不同工作溫度下的規格分析，其中規格分析包含感測器的靈敏度、雜訊比以及鑑別度。
關鍵詞: 場效電晶體、重金屬、離子選擇感測器、可靠度分析

With the progress of industry, the heavy metal pollution leads to many problems and the risk of the heavy metal is increasing in our daily lives. If people contact to the water, air or food containing heavy metal, it is prone to damage the nervous system and organ in the body. Therefore, monitoring the content of heavy metal instantly has become an important issue. Traditional methods of detecting heavy metal include inductively coupled plasma mass spectrometry (ICP-MS) and atomic absorption spectroscopy (AAS). Although these methods can be used to detect heavy metals, they are costly, time-consuming and quite complicated. So, they can’t meet the requirements of timely and accurate detection. The extended gate ion selective field effect transistor has the characteristics of high sensitivity, wide detection range, low detection limit, low cost and real-time detection. It is a convenient and effective system for people who need to detect the concentration of heavy metals immediately. To make the sensors have long lifetime, wide operating temperature range, and room temperature preservation, we focus on improving the reliability of the sensors and conduct a series of experiments regarding to suitable storage temperature of sensors, different lifetimes of sensors and the suitable working temperature for the sensors. The tests include the analysis of sensor's sensitivity, signal-to-noise ratio and resolution.
keywords: FET, heavy metal, ion selective sensors, reliability assessment

摘要-------------------------------------------------------------i
Abstract---------------------------------------------------------ii
Chapter 1 Introduction-------------------------------------------1
Chapter 2 Literature Review--------------------------------------4
2.1 Threaten of heavy metals-------------------------------------4
2.2 Traditional methods for detecting heavy metal ions-----------6
2.3 Ion Selective Electrode (ISE)--------------------------------7
2.4 Ion Sensitive FETs (ISFETs)----------------------------------11
Chapter 3 Preparation and Design of Experiments------------------16
3.1 Sensor array chip fabrication and immobilization of Ion Selective Membrane---------------------------------------------------------16
3.2 Heavy metal test solution preparation------------------------18
3.3 Measurement method-------------------------------------------20
Chapter 4 Results and Discussions--------------------------------22
4.1 Investigation of sensor mechanism----------------------------22
4.2 Characteristic curve of LND150 MOSFET and VN10LP MOSFET------23
4.3 Sensitivity of heavy metal ion sensors-----------------------27
4.4 Storage temperature for heavy metal ion sensors--------------31
4.5 Selectivity test of heavy metal ion sensors------------------39
4.6 Heavy metal ion sensors with different lifetimes-------------45
4.7 Cadmium ion sensors tested at different temperatures---------51
4.8 Chips with package and leakage current measurement of ISM chip---
-----------------------------------------------------------------54
Chapter 5 Conclusion---------------------------------------------66
Chapter 6 Future Work--------------------------------------------67
Reference--------------------------------------------------------69

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