感測器隨著科技的發展與演進，除了元件逐漸微縮化之外，多功能感測整合亦為現今發展的趨勢。有鑑於此，本研究利用 CMOS 標準製程平台之光罩設計，以及微機電技術相關後製程操作，提出於單晶實現接觸及非接觸感測功能之感測晶片，以期應用於電梯按鈕之按鍵操作；另一方面，透過線圈繞線設計以及受力介面的進一步探討，將有效提升電感式觸覺感測器之靈敏度以及觀察其訊號變化趨勢。利用 CMOS 標準製程平台膜層之間堆疊的設計，熱電式紅外線感測器及電感式力感測器以水平整合的布局方式呈現，與此同時，本研究亦採用覆晶接合技術作為整體元件架構，驗證了覆晶接合技術下紅外線感測器之感測性能、紅外光之近接感測特性、以及電感式力感測器於正向壓力下之訊號變化。

With the development and evolution of technology, in addition to the gradual miniaturization of components, the integration of multi-functional sensing is also a trend of today's development. In view of this, this research uses the layout design of the CMOS standard process platform and the post-process operations related to MEMS technology, and proposes a monolithic integrated sensing chip that realizes contact and non-contact sensing functions, with a view to applying it to the operation of elevator buttons. On the other hand, through the further discussion of the coil winding design and the force interface, the sensitivity of the inductive tactile sensor will be effectively improved and the signal change trend of the inductive tactile sensor will be observed. Using the design of stacking between film layers of the CMOS standard process platform, the thermoelectric infrared sensor and the inductive force sensor are presented in a horizontally integrated layout. At the same time, this study also adopts the flip-chip bonding technology as the overall device structure to verify the sensing performance of the infrared sensor, the proximity sensing characteristics of the non-contact sensing, and the signal change of the inductive force sensor under normal force.

摘要 I
Abstract II
誌謝 III
目錄 VII
圖目錄 XI
表目錄 XXIII
第一章 緒論 1
1-1 前言 1
1-2 文獻回顧 2
1-2-1 紅外線感測器應用 3
1-2-2 紅外線感測器技術回顧 4
1-2-3 力感測器應用 9
1-2-4 力感測器技術回顧 10
1-2-5 力感測器性能設計方向 15
1-3 TSMC CMOS製程平台 16
1-4 研究動機與執行方法 20
1-5 全文架構 21
第二章 接觸與非接觸操控之整合單晶片 47
2-1 元件設計動機 47
2-2 熱電式紅外線感測器設計考量 48
2-3 電感式力感測器設計考量 52
2-3-1 平面電感線圈感測原理與結構 53
2-3-2 磁性剛體材料選擇 54
2-3-3 高分子材料選擇 56
第三章 元件設計與分析 70
3-1 元件設計 70
3-1-1 感測器水平整合架構 70
3-1-2 覆晶封裝技術 72
3-2 模擬分析 74
第四章 製程與量測結果 86
4-1 製程細節討論 86
4-1-1 背向矽基材深蝕刻及正向金屬 / TMAH濕蝕刻 86
4-1-2 雷射與電性連接 89
4-1-3 高分子材料填充與磁性凸塊放置 90
4-1-4 表面形貌量測 91
4-2 元件性能量測結果 93
4-2-1 紅外線接收性能表現 94
4-2-2 觸覺受力性能表現 97
4-3 結語 100
第五章 結論與未來工作 119
5-1 結論 119
5-2 未來工作 119
5-2-1 整合單晶片感測性能提升 120
5-2-2 紅外線低壓封裝設計 121
參考文獻 128
附錄A 多層線圈觸覺感測器設計 134
A-1 多層線圈設計考量 134
A-1-1 理論分析 135
A-1-2 模擬分析 138
A-2 元件設計架構 139
A-2-1 元件設計外觀 140
A-2-2 量測結果 141
A-3 結語 142
附錄B 高分子受力介面設計 156
B-1 觸覺力感測器受力高分子介面探討 156
B-1-1 元件設計動機 156
B-1-2 模造式與3D列印光固化式受力感測介面 157
B-2 力介面設計概念 159
B-2-1 設計架構 159
B-2-2 量測結果比較 159
B-3 光固化式受力接觸介面設計改良 161
B-4 結語 162
附錄C 覆晶接合製程 176
C-1 微米固晶機操作 176
C-2 電性導通材料選擇 177
C-3 結語 179
附錄D 線圈陣列變化設計探討 184
D-1 海爾貝克陣列介紹 184
D-2 線圈設計考量 185
D-2-1 元件設計架構 185
D-2-2 量測結果比較 186
D-3 結語 188

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