近年來，奈米雷射備受注目。有別於傳統雷射，它並沒有繞射極限的基本物理限制。因此，我們可以將元件縮小到奈米尺度以利於置入積體電路中應用。此外，與傳統雷射相比，奈米雷射在傳輸信號時不僅速度更快，能量損失也更低。
為了應用表面等離激元 (SPP) 效應，我們使用半導體-絕緣體-金屬 (SIM) 作為奈米雷射的主要結構以此達到光增強的效果。此結構是由氧化鋅奈米線與單晶鋁基板和二維六方氮化硼組成。將化學氣相沉積製備高結晶度的氧化鋅奈米線作為室溫下的增益介質；將使用分子束磊晶沉積的單晶鋁基板作為金屬層；將機械剝離和化學氣相沉積製備的二維六方氮化硼（h-BN）分別作為絕緣層並置於氧化鋅奈米線和單晶鋁基板之間。
在添加介電層後，雷射閾值會有相當顯著的下降。結果顯示當使用五奈米化學氣相沈積轉移後的 h-BN作為介電層可以得到最低的雷射閥值（0.88 MW/cm2）。此外，不管使用任何厚度的h-BN 進行奈米來射實驗，由於較為平整，化學氣相沈積轉移後的 h-BN 都可以獲得比機械剝離轉移的h-BN 更低的雷射閥值。

Nanolasers have attracted much attention in recent years. Different from the traditional laser, it does not have a diffraction limit restriction. Therefore, one can shrink the device down to the nanometer scale to integrate it with IC circuits. Also, compared with conventional lasers, nanolasers exhibit not only higher speed but lower energy loss when transmitting signals.
In the present work, a semiconductor-insulator-metal (SIM) structure has been used. We demonstrate a surface plasmon polariton (SPP) nanolaser consisting of ZnO nanowires coupled with a single crystalline aluminum film and a high dielectric constant interlayer.
The threshold value for lasing is considerably lower with the addition of a dielectric layer. The influences of different thicknesses and processes of h-BN on the performance of nanolasers are investigated. Nanolaser with 5 nm CVD transferred h-BN has the lowest (0.88 MW/cm2) threshold value, which is consistent with the simulation results. In addition, the nanolaser with the CVD h-BN has a slightly lower threshold value than the mechanically exfoliated h-BN of different thicknesses owing to less surface roughness.

Contents i
Abstract iv
摘要 v
致謝 vi
CHAPTER 1 INTRODUCTION 2
1.1 Nanotechnology 2
1.1.1 One-Dimensional Nanostructures 3
1.1.1.1 Vapor-Liquid-Solid (VLS) Growth Mechanism 4
1.1.2 Two-Dimensional Nanostructures 5
1.2 Motivation 6
1.3 Theoretical Background of Plasmonic Nanolaser 7
1.3.1 Surface Plasmon Polariton 7
1.3.2 Surface Plasmon Polariton in Nanolasers 10
1.4 ZnO/ h-BN/ Al Plasmonic Nanolaser Structure 12
1.4.1 ZnO Nanowire 13
1.4.2 h-BN Dielectric Layer 14
1.4.3 Aluminum Substrate 15
CHAPTER 2 EXPERIMENTAL PROCEDURES 16
2.1 Synthesis of ZnO Nanowires 16
2.1.1 Preparation of Silicon Substrate 16
2.1.2 Horizontal Three Zone Furnace Growth 17
2.2 Preparation of Two-Dimensional Materials 18
2.2.1 Mechanical Exfoliation 19
2.2.2 All-Dry Viscoelastic Transferring 20
2.2.3 CVD h-BN Transferring 21
2.3 Epitaxial Aluminum Deposited by Molecular Beam Epitaxy (MBE) 22
2.4 ZnO Nanolaser Fabrication 23
2.5 Scanning Electron Microscope (SEM) 24
2.6 Transmission Electron Microscope (TEM) 26
2.7 X-Ray Diffractometer (XRD) 28
2.8 Atomic Force Microscope (AFM) 29
2.9 Micro-Raman Spectroscopy 30
2.10 Focused Ion Beam (FIB) System 31
2.11 Micro-Photoluminescence (μ-PL) Spectroscopy 32
CHAPTER 3 RESULTS AND DISCUSSION 33
3.1 Epitaxial Aluminum Film 33
3.2 Hexagonal Boron Nitride 34
3.2.1 Mechanically Exfoliated h-BN 35
3.2.2 CVD Transferred h-BN 36
3.3 Zinc Oxide Nanowires 38
3.4 Metal/ Insulator/ Semiconductor Structured Nanolaser 42
3.5 Characteristics of ZnO Nanowire on Al Film with 3.5 nm Native Oxide 45
3.6 Effects of Different Thickness of Mechanically Exfoliated h-BN on Lasing Performance 46
3.6.1 3 nm h-BN 46
3.6.2 5 nm h-BN 47
3.6.3 10 nm h-BN 48
3.7 Effects of Different Thickness of CVD h-BN on Lasing Performance 49
3.7.1 3 nm h-BN 49
3.7.2 5 nm h-BN 50
3.7.3 10 nm h-BN 51
3.8 Comparison of Different Conditions of h-BN on Lasing Performance 52
3.9 Comparison of Stability of Nanolasers with Two Kinds of h-BN 54
3.10 Simulation Results 56
3.11 Comparison of Lasing Performance with Those of Other Relevant Works 57
CHAPTER 4 SUMMARY AND CONCLUSIONS 59
CHAPTER 5 FUTURE PROSPECTS 60
5.1 Fabrication of ZnO Core-Shell/ h-BN/ Al Structure 60
5.2 Plasmonic Nanolasers Based on Graphene 61

Appendix 62
References 66

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