電容式耦合電漿源(Capacitively Couple Plasma, CCP)為半導體工業中常見的電漿製程應用。常見的應用例如雙頻耦合式電漿源(Dual Frequency CCP, DF-CCP)，其中高頻主要為控制電漿生成，而低頻為控制離子能量分布(Ion Energy Distribution, IED)，或使用特製電壓波形(Tailored Voltage Waveforms, TVWs)以達到控制離子能量分布之目的。本研究分為兩部分，第一部分為利用流體模型模擬氫氣電漿在單頻放電時基本特性的研究與探討。第二部分為氫氣電漿在特製波形放電下之基本特性的研究與探討。
本研究採用數值模擬計算軟體CFD-ACE+，以一維簡化CCP為模型。第一部分模擬單頻氫氣電漿源在低氣壓(小於1 Torr)的情況下電漿特性的分布情形，並觀察各粒子密度、電子溫度、以及電漿電位等參數的一維分布並使用內建的蒙地卡羅碰撞(Monte Carlo Collision, MCC)模型計算電極表面之離子能量分布。第二部分則模擬在特製波形氫氣電漿源的情況下，電漿的各項粒子密度、電子溫度、電漿電位以及離子能量分布的情形。本研究使用之特製波形由疊加四個頻率並調整其各諧波之間之相位差而成。
特製波形由13.56 MHz與其第二、三、四諧波頻率組成，其奇數諧波之相位為0，而偶數諧波之相位為0或π，稱此波形為peak以及valley。模擬結果顯示此類波形可產生正負對稱的自偏壓，並產生電不對稱效應。藉由調整自偏壓的強度可以控制離子到達電極表面的最大離子轟擊能量。在本研究中，透過特製波形產生的電不對稱效應可以在兩個電極分別產生相差約4倍之最大離子轟擊能量。若與傳統單頻放電相比，特製波形可維持其中一個電極上之離子能量分布不變，而另一電極上之離子能量分布範圍則可以減少為約四分之一。因此特製波形可以有效的減少離子能量分布的範圍以滿足在半導體製程中之各種應用。

Capacitively coupled plasma (CCP) is a common plasma process application in the semiconductor industry. In some common applications such as dual-frequency CCP, the high frequency is mainly to control the plasma generation, and the low frequency is to control the ion energy distribution (IED), or use tailored voltage waveforms (TVWs) to achieve the purpose of controlling IED. The purposes of this study are divided into two parts. The first part focus on investigating the plasma properties of hydrogen plasma in single-frequency discharge by a fluid model. The second part is to investigate the plasma properties of hydrogen plasma in tailored voltage waveform discharge by a fluid model.
The numerical simulation software CFD-ACE+ is used to model the one-dimensional(1D) CCP. In this study, the 1D distribution of parameters such as electron density, electron temperature, and plasma potential are observed, and the IEDFs on the electrode are calculated by the Monte Carlo Collision (MCC) model. The TVWs used in this study are obtained by superimposing four frequencies and adjusting the phase between their harmonics.
The TVWs consist of 13.56 MHz and its second, third, and fourth harmonic frequencies. The phase of the odd harmonics is 0, and the phase of the even harmonics is 0 or π. These waveforms are called “peak” or “valley”. The simulation results demonstrate that such TVWs can generate positive or negative symmetric self-bias, so call electrical asymmetry effect (EAE). The self-bias can control the maximum ion bombardment energy on one of the electrodes by switching the waveform from peak to valley. The EAE caused a difference of approximately four times in the maximum ion bombardment energy between two electrodes. Compared to the single frequency discharge, the TVWs can maintain the IEDF on one of the electrodes and reduce the range of IEDF on the other electrode. As a result, the TVWs effectively reduce the range of IEDF, catering to various applications in semiconductor processing.

摘要 i
Abstract ii
Content iv
List of Figures vi
Lists of Tables ix
Chapter 1 Introduction 1
1.1 Background 1
1.2 Motivation 3
Chapter 2 Literature Review 5
2.1 Ion Energy Distribution Function 5
2.2 Dual-Frequency Discharge 9
2.3 Tailored Voltage Waveforms 15
2.4 Summary of Literature Review 18
Chapter 3 Model Description 19
3.1 Introduction of CFD Software 19
3.2 Fluid Model 20
3.2.1 Electrons 20
3.2.2 Ions and Neutrals 23
3.2.3 Electromagnetics 25
3.3 Geometry 25
3.3.1 Boundary Condition 26
3.4 Reaction Database 27
3.4.1 Electronic Reaction Rate 27
3.4.2 Surface Plasma Chemistry 28
Chapter 4 Simulation Results 32
4.1 Simulation Parameters and Initial Conditions 32
4.2 Single Frequency 33
4.2.1 Discharge Characteristic, Single Frequency 33
4.2.2 Ion Energy Distribution Function, Single Frequency 46
4.2.3 Effect of Pressure, Single Frequency 47
4.3 Tailored Voltage Waveforms 52
4.3.1 Discharge Characteristic, TVWs 53
4.3.2 Ion Energy Distribution Function, TVWs 60
4.3.3 Effect of Pressure, Single Frequency 62
4.4 Comparison of IEDF, Single Frequency vs TVWs 67
Chapter 5 Summary 68
References 70
Appendix A. 78
Appendix B. 82
Appendix C. 85
C.1 Analysis of H+ IEDF Calculation Error in SF Discharge 85
C.2 Analysis of H2+ IEDF Calculation Error in TVW Discharge 88
C.3 Some Test on This Bug 90
D Appendix D. 92
E Appendix E. 95
E.1 Sticking Coefficient 95
E.2 Surface Reaction Setting Error 97

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