本論文旨在設計出可在室溫下操作的矽基(Silicon-based)熱載子式紅外光偵測器，同時也可作為熱載子種類之檢測平台。本論文中以超薄氧化鋅作為傳導電流的通道，以超薄摻鎵氧化鋅作為電極，並以銀作為收光材料。
矽基光偵測器因結構簡單而備受關注，但若入射光子的能量小於矽的能隙，將無法貢獻有效的光電流，因此在收光材料的選擇上需做出相對應的改變。藉由金屬照光會產生熱載子的機制，本論文選擇銀作為吸收紅外光的材料，使得矽基之光偵測器可操作於光子能量小於矽塊材能隙的1550nm波段，此波段在光通訊中扮演關鍵的角色。
相較於其他傳統的薄膜沉積技術，原子層沉積技術(Atomic layer deposition, ALD)因為在每一個製程循環僅會形成一個原子層厚度的薄膜，可以達到極為精準的厚度控制，並且因為成長過程被侷限在基板表面，就算在具有結構的表面也能得到很好的覆蓋率與均勻性。由於本論文在光學及電學特性方面對薄膜厚度的變化十分敏感，故選擇原子層沉積法及臨場摻雜技術作為本論文的製程方法。
實驗結果顯示，金屬照光後會有部分熱載子躍過蕭特基位障，被橫向電場收集，形成有效的光電流，而光電流的大小則與金屬厚度有關。在1 V的偏壓下，厚度為10 nm的銀薄膜在照射波長1550 nm、功率0.5 mW的紅外光雷射後，會有大約206.63 nA的過量電流產生，其響應度約為41.59 μA/W；在相同偏壓條件下，厚度為5 nm的銀薄膜則可產生大約228.05 nA的過量電流，其響應度約為45.61 μA/W。另外，從IR開關測試的實驗結果可以判斷金屬照光後產生的熱載子種類，根據本論文的量測結果可以推論出銀在照射1550 nm紅外光後產生的熱載子種類為電子。

The thesis proposed to design a silicon-based infrared (IR) photodetector which can operate at room temperature, and can be used to distinguish type of hot carrier. In the thesis, ultra-thin zinc oxide is used as the channel for conducting current, ultra-thin gallium-doped zinc oxide is used as the electrode, and silver is used as photo-absorbing material.
Silicon-based photodetectors have attracted much attention due to its simple structure. However, if energy of incident photons is smaller than the band gap of silicon, it will not be able to contribute to effective photocurrent. Therefore, photo-absorbing material should be revised accordingly. Due to the mechanism that metal will generate hot carriers when illuminated, silver is selected as photo-absorbing material for infrared, so that the silicon-based photodetector can operate in the wavelength of 1550 nm which plays a key role in optical communication.
Compared with other traditional thin film deposition techniques, atomic layer deposition (ALD) can achieve extremely precise thickness control because it only forms a thin film with thickness of one atomic layer in each cycle. As a result, good coverage and uniformity can be obtained even on non-uniform surface. Because the optical and electrical properties of the device are very sensitive to the variation of film thickness, atomic layer deposition and in-situ doping are selected as the fabrication techniques.
The experimental results show that after the metal is illuminated, some hot carriers will transit through the Schottky barrier and be collected by the horizontal electric field to form an effective photocurrent. Besides, the magnitude of the photocurrent is related to the thickness of the metal. Under a bias voltage of 1 V, excess current about 206.63 nA will be generated when a 10 nm silver film is irradiated with an infrared laser (wavelength: 1550 nm, power: 0.5 mW), and its responsivity is approximately 41.59 μA/W ; under the same bias condition, a 5 nm silver film can generate excess current of about 228.05 nA, and its responsivity is approximately 45.61 μA/W. Additionally, from the experimental results of the On/Off switch test, the type of hot carriers generated by metal can be determined. According to the measurement results, it can be deduced that the type of hot carriers generated by silver after being irradiated is electron.

摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VIII
第一章 序論 1
1.1 前言 1
1.2 研究動機 2
1.3 論文章節架構 4
第二章 背景知識 5
2.1 蕭特基接面與歐姆接面介紹 5
2.1.1 金屬/半導體接面理論 5
2.1.2 蕭特基接面 5
2.1.3 歐姆接面 8
2.2 氧化鋅材料 9
2.2.1 氧化鋅的基本性質及應用 9
2.2.2 氧化鋅結構 11
2.2.3 摻鎵氧化鋅 12
2.3 材料的光吸收效應 13
2.3.1 金屬 13
2.3.2 半導體 15
2.4 熱載子 18
2.5 原子層沉積 21
2.5.1 原理介紹 21
2.5.2 原子層沉積製程 22
2.5.3 摻鎵氧化鋅製程 23
2.6 薄膜檢測 25
2.6.1 橢圓儀介紹 25
2.6.2 X光繞射儀介紹 26
2.7 光偵測器介紹 27
2.7.1 光導體 27
2.7.2 光二極體 27
2.7.3 光電晶體 28
2.7.4 熱載子式光偵測器 30
2.8 光偵測器重要參數 32
2.8.1 響應度 32
2.8.2 外部量子效率 32
2.8.3 暗電流 34
2.8.4 響應速度 35
2.8.5 偵測度 35
2.8.6 雜訊 36
2.8.7 材料選擇 37
第三章 元件設計與製作 38
3.1 元件設計 38
3.2 待測樣品架構 40
3.2.1 實驗架構一 (Device 1) 41
3.2.2 實驗架構二 (Device 2) 44
3.2.3 實驗架構三 (Device 3) 44
3.2.4 實驗架構四 (Device 4) 45
3.3 實驗流程 47
3.3.1 矽基板製備及清洗 47
3.3.2 原子層沉積氧化鋅及摻鎵氧化鋅薄膜 47
3.3.3 成長銀薄膜收光元件 48
3.3.4 樣品量測 49
第四章 量測結果與討論 50
4.1 量測儀器介紹 50
4.2 量測儀器架設 50
4.3 量測結果 52
4.3.1 薄膜品質檢測 52
4.3.2 歐姆測試 53
4.3.3 氧化鋅通道層傳導測試 54
4.3.4 氧化鋁絕緣效果測試 55
4.3.5 超薄氧化鋅之完全空乏測試 56
4.3.6 光響應分析 58
4.4 本論文中使用之待測樣品光響應比較 68
參考文獻 72

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