本研究設計以微流道模型，模擬雙相微流道熱沉應用於IGBT陣列之冷卻，針對不同出口乾度進行模擬，使用的工作流體為R134a。微流道模型使用Thome機理式模型與Chen經驗式兩種模型取得非常數熱對流係數沿管長的h(z)分布，因Chen經驗式模型須由管壁與流體飽和溫度、壓力的溫差及壓差算得，可搭配考慮壓降的影響，分別得到忽略壓降與考慮壓降兩種h(z)分布。將以上獲得的三種h(z)應用於IGBT陣列的微流道熱沉數值模擬，但因實際熱傳面積並非底板底面面積，故需要將修正h(z)為heff(z)，對各流量下Chen經驗式考慮壓降與忽略壓降之heff(z)獲得的溫度分佈結果互相比較，顯示IGBT模組最高溫度的差異皆在0.03 ℃以內；比較採用忽略壓降的Thome機理式模型與Chen經驗式忽略壓降的heff(z)，顯示在各流量下兩者對IGBT模組數值模擬最高溫度的差異均在2.2 ℃以內；此外，將heff(z)取平均值h ̅_eff後用於計算熱沉底板溫度的解析解及IGBT陣列數值模擬，數值模擬採用Thome機理式模型及Chen經驗式個別的h ̅_eff時，兩者IGBT陣列的最高溫度在各流量下皆相差在1.5℃以內；採用h ̅_eff搭配Muzychka解析解所得到的IGBT陣列溫度分布與採用h ̅_eff搭配數值分析的溫度分布差異較大，最大差異可達約7.71 ℃。

This study uses different mini/micro-channel models to simulate a two-phase mini/micro-channel heat sink applied to the cooling of an IGBT array under different outlet qualities of the working fluid R134a. The mini/micro-channel models include the Thome’s mechanistic model and Chen’s empirical correlation, among others, to obtain the heat convection coefficients distribution h(z) along the channel. Because pressure can be varied in Chen’s correlation, pressure drop along the channel is also considered to obtain two h(z) distributions, with or without pressure drop, respectively. The three h(z)s obtained above are applied to the numerical simulation for the two-phase mini/micro-channel heat sink on the IGBT array. To account for the actual heat transfer area in place of the base plate area, the h(z)s are converted to heff(z)s. According to the two heff(z)s obtained from Chen's empirical correlations, considering pressure drop leads to differences within 0.03 ℃ in the maximum temperature of the IGBT module. While Thome’s mechanistic model reveals the effects of liquid film thickness on h(z), the predicted maximum temperatures of the IGBT module differ from those using Chen’s correlation by less than 2.2 ℃ at various flow rates. When the numerical simulation adopts the average h ̅_eff obtained from Thome’s mechanistic model and Chen's correlation, the maximum temperatures of the IGBT array differ within 1.5°C. The temperature distributions of the IGBT array obtained by Muzychka's analytical solution adopting the h ̅_effs differ from the results of numerical simulation by about 7.71 ℃.

摘要 I
Abstract II
目錄 III
圖表目錄 V
符號表 IX
第一章 緒論 1
1.1 研究背景 1
1.2 迷你/微流道區分規則 2
1.3 迷你/微流道熱沉(Mini/micro-channel heat sink)冷卻 3
1.3.1 單相(single-phase)對流傳熱 3
1.3.2 雙相(two-phase)對流傳熱 6
1.4 研究目的 11
第二章 迷你/微流道雙相流分析 13
2.1 Chen熱對流係數經驗式模型 13
2.2 壓降經驗式 20
2.3 Magnini and Thome [29]之蒸發模型 25
第三章 數值模型與理論方法 33
3.1 兩相迷你/微流道對IGBT陣列散熱之數值方法 35
3.2 受多熱源加熱之冷板(cold plate)底板內熱擴散過程的解析模式 40
第四章 結果與討論 45
4.1 單一迷你/微流道壓降 45
4.2 單一迷你/微流道之h(z) 46
4.2.1 忽略壓降影響 46
4.2.2 考慮壓降影響 52
4.3 IGBT陣列溫度分布 55
第五章 結論 65
參考文獻 66

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