雷射干涉重力波天文台(Laser Interferometer Gravitational-Wave Observatory,LIGO)，主要目的為偵測來自宇宙中天體運行的重力波訊號，然而重力波訊號非常的微弱，容易受到雜訊干擾，因此降低系統雜訊為重點目標。重力波偵測儀以麥克森干涉儀為架構，當中40Hz~400Hz為系統總雜訊最小的區間，此區間主要的雜訊來自於，高反射鏡堆疊材料之熱雜訊(Coating Brownian noise)。相關論文中指出材料熱雜訊與機械損耗為正比，因此本實驗室致力於研究高品質光學薄膜，並要求薄膜同時兼顧良好的光學性質與機械損耗。
本研究的重心為找到降低氮化矽、氮氧化矽光學吸收的方法，為了明白氮化矽、氮氧化矽光學吸收的成因，筆者從非晶材料吸收光譜開始探討光學吸收，並將吸收光譜分成三個區段，光子能量由高到低排序，分別為Band-to-band absorption、Urbach absorption、Defect absorption，解釋每個區段在能帶圖(Band diagram)中，相應吸收光子的機制。同時了解材料中的懸鍵(Dangling bond)，會在能隙(Energy gap)中產生缺陷能態(Defect State)，進而造成低能量的光學吸收。
本論文透過整理實驗數據，歸納出光學吸收經驗公式，藉由經驗公式得到光學吸收、矽懸鍵與能隙，三個參數的趨勢關係，從中得知若薄膜矽懸鍵濃度大於〖10〗^18 〖cm〗^(-3)，減少矽懸鍵濃度即為降低光學吸收最好的方法，反之矽懸鍵濃度小於〖10〗^18 〖cm〗^(-3)，降低光學吸收的方法則是設法提高能隙大小。另外，經驗公式的模擬結果透露，降低光學吸收的方法，除了減少矽懸鍵濃度、拉大能隙之外，降低Urbach absorption也能達到降低光學吸收的目標。

The purpose of Laser Interferometer Gravitational-Wave Observatory(LIGO) is to detect the gravitational waves signals from celestial bodies in the universe and this system is based on Michelson interferometer. However, the gravitational waves signals are very weak and are easily disturbed by noise, so reducing system noise is the key target for our study. One of the dominant noise is thermal noise, which comes from the stacked material of the high reflector. Some papers pointed out that thermal noise of materials is proportional to mechanical loss. Therefore, our laboratory is dedicated to researching high-quality optical films with low mechanical loss and low optical absorption.
The focus of this study is on reducing the optical absorption of silicon nitride and silicon oxynitride. In order to understand the mechanism of the optical absorption, the author first discusses the three principal regions of optical absorption in an amorphous semiconductor, dividing it into three principal regions when arranged in photon energy from high to low, which are Band-to-band absorption, Urbach absorption, and Defect absorption respectively and explains the mechanism how each region in Band diagram absorbs the photon. Meanwhile, understanding that the dangling bond in the material will generate defect states in the energy gap, which will cause low-energy Defect absorption.
In this thesis, the empirical equation of optical absorption is obtained by analyzed experimental data. The empirical equation is used to comprehend the relationship among three parameters – optical absorption, silicon dangling bonds and energy gap, so as to know that if the concentration of silicon dangling bonds is higher than 〖10〗^18 〖cm〗^(-3), decreasing the concentration of silicon dangling bonds is the best way to reduce optical absorption. On the contrary, if the concentration of silicon dangling bonds is less than 〖10〗^18 〖cm〗^(-3), widening the energy gap is the best way to reduce optical absorption. In addition, the simulation results of the empirical equation revealed that apart from decreasing the concentration of silicon dangling bonds and widening the energy gap, lowering the Urbach absorption can also achieve the purpose of reducing optical absorption.

目錄
Abstract I
摘要 III
致謝 IV
目錄 V
圖目錄 VIII
表目錄 XI
第一章、導論 1
1-1前言 1
1-2研究動機 3
第二章、非晶材料吸收光譜理論探討 5
2-1 Band-to-band absorption 5
2-1-1 單晶材料直接能隙吸收系數 α 推倒 6
2-1-2 非晶材料吸收系數 α 推倒 9
2-1-3 Tauc-Lorentz model 13
2-2 Urbach absorption 15
2-3 Defect absorption 19
2-4 總結 21
第三章、氮化矽與氮氧化矽薄膜之材料特性分析 24
3-1 氮化矽薄膜之材料特性分析 24
3-1-1 氮化矽薄膜之製程介紹 24
3-1-2 氮化矽薄膜之材料特性分析 26
3-2氮化矽薄膜大氣退火之製程介紹與材料特性分析 28
3-2-1 氮化矽薄膜大氣退火之製成介紹 28
3-2-2 氮化矽薄膜大氣退火之材料特性分析 29
3-3氮化矽薄膜補氫退火之製程介紹與材料特性分析 30
3-3-1氮化矽薄膜補氫退火之製程介紹 30
3-3-2氮化矽薄膜補氫退火之材料特性分析 31
3-4氮氧化矽薄膜之製程介紹與光學吸收分析 33
3-4-1氮氧化矽薄膜之製程介紹 33
3-4-2氮氧化矽薄膜之材料特性分析 34
3-5總結 36
第四章、氮化矽與氮氧化矽薄膜光學吸收之經驗公式 39
4-1氮化矽薄膜光學吸收之經驗公式 39
4-1-1 主導光學吸收的參數----氮氫鍵與矽懸鍵 39
4-1-2 計算氮氫鍵對於光學吸收之貢獻 40
4-1-3 計算矽懸鍵之光學吸收 41
4-1-4 能隙對於矽懸鍵光學吸收之影響 42
4-2氮化矽與氮氧化矽薄膜光學吸收之經驗公式 46
4-2-1利用氮氧化矽薄膜重新建立光學吸收經驗公式 46
4-2-2加入光子能量於光學吸收經驗公式 48
4-3綜合討論 51
4-3-1 經驗公式的模擬結果 51
4-3-2 經驗公式與實驗數據之間的誤差 54
第五章、無氨氣製程氮化矽薄膜矽懸鍵濃度與光學吸收之探討 60
5-1 光學吸收與矽懸鍵之趨勢 60
5-2 建立矽懸鍵與光學吸收之經驗公式 61
5-3 比較非晶矽與無氨氣製程氮化矽薄膜之光學吸收 64
第六章、總結與未來展望 65
6-1總結 65
6-2未來展望 67
參考文獻 69

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