矽材料的優勢在於一般光學通訊傳輸波長為1,310 nm 和 1,550 nm，矽本身對於這兩個波長都不會吸收，因此這兩個波段可以毫無阻礙地通過。然而光纖和矽波導之間的耦合傳輸損耗非常高，使得矽並非作為邊緣耦合器材料的首選。參考文獻[1-5]，內容中提到在操作波長1310nm下厚度30nm矽波導與厚度220nm氮化矽波導所形成的混合波導傳播損耗相當低，其損耗約為0.055dB/cm。為求低傳播損耗、低耦合損耗我們最終使用單層氮化矽材料作為邊緣耦合器材料並利用混合波導進行傳播，融合矽光子平台製作高效能主動元件光偵測器。
主動元件Si+矽缺陷光偵測器通過矽離子佈值製造缺陷作為光偵測器的吸收層提升吸收效率以及光電轉換效率，另一種則是使用單晶矽作為吸收層材料。在外加逆偏壓20V的情況下，當進入到光偵測器的光功率為 0.00112W時，長度為500μm 的 Si+ 矽缺陷分離式吸收倍增雪崩光電探測器及單晶矽分離式吸收倍增雪崩光電探測器兩者產生的光電流分別為1.1e-5A以及9e-5A ，對應的響應度約為 0.01A/W和0.08A/W。

Recently, silicon photonics technology plays an important role in the large-scale photonic integrated circuits for many applications. Although Si waveguide makes signal transmit stably and efficiently between passive devices and active devices, the high loss between fiber and silicon waveguide becomes a serious problem for edge coupling. Si3N4 waveguides have been demonstrated with low propagation loss over a wide range of wavelengths for an ultra-thin Si3N4 waveguide and high coupling efficiency with fiber. Due to the above reasons, Si3N4 waveguide has been recommended for this ideal photonics platform.

Besides, active devices, photodetector in silicon photonics is hampered by the conflicting requirements for efficient optical-to-electrical conversion. Mid-band-gap defects via silicon-ion implantation are used as the absorption layer for increasing sensitivity to sub-band-gap light in this research. Different photodetectors will be inputted a 1310nm on-chip power by tunable laser to generate the photocurrent. Comparing with Si+ damaged silicon separated absorption multiplication avalanche photodetector and single crystal silicon separated absorption multiplication avalanche photodetector, we find out that under the same applied voltages (-20V) and input power (0.00112W), photocurrent to 1.1e-5 A and 9e-5 A, corresponding to a responsivity will be 0.01A/W and 0.08A/W。 Due to their potential for high performance, we can say that the devices described here are completely compatible with standard silicon processes.

摘要 I
ABSTRACT II
致謝 III
目錄 IV
圖目錄 VI
表目錄 IX
第一章 緒論 1
1.1 前言 1
1.2 研究動機與目的 4
1.3論文架構 5
第二章 理論與背景 6
2.1 PIN光偵測器 6
2.2 分離式吸收倍增雪崩光偵測器 12
第三章 主動及被動元件設計 19
3.1 混合模態耦合器設計 20
3.2 PIN光偵測器元件設計 24
3.3 分離式吸收倍增雪崩光偵測器元件設計 30
第四章 元件製作 36
4.1 元件製作流程圖 36
4.2 元件製程說明 40
第五章 實驗量測架構及結果分析 55
5.1 光損耗量測架構 55
5.2 光偵測器之光電流與暗電流量測架構 59
5.3量測結果與分析 61
第六章 結論與未來展望 71
6.1 結論與未來展望 71
參考文獻 74

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