太陽能電池之研究近年來快速發展，而在致力於提升效率的同時，如何降低整體製程之成本也是一門重要的課題。本篇論文利用化學濕式蝕刻的方式對單晶太陽能電池進行表面的蝕刻，在表面形成倒金字塔之結構，有助於進一步降低表面反射率，增加入射光進入電池內產生載子的機會。另外我們也以臭氧氧化金屬鋁的方式，取代傳統ALD製程，使用較低成本的方法在晶片背面形成氧化鋁的鈍化層，透過這一層氧化鋁層可以在背面形成負電荷層，將對晶片產生場效鈍化之效果，如此一來便能夠提升長波長之入射光在背表面之吸收，降低背表面復合速率以及提升少數載子生命週期。

本論文使用臭氧氧化金屬鋁形成背面氧化鋁鈍化層，透過不同之氧化鋁層製程參數，如鍍鋁厚度、氧化時間、退火溫度、退火時間，探討少數載子生命週期的提升效果，而論文中為了證實氧化鋁層具有鈍化效果，使用XPS、TEM、C-V量測以及IQE量測分別進行探討，最後，我們得出之最佳製程參數為，鍍鋁厚度3nm，氧化時間20分鐘，退火溫度600°C進行退火90秒，由此參數製程之倒金字塔PERC太陽能電池的最佳轉換效率可以達16.92%，比起無PERC結構之倒金字塔太陽能電池參考片提升0.6%絕對值之效率。

Research on solar cells has been developed rapidly in recent years. While working to improve efficiency, how to reduce the cost of the manufacturing process is also an important issue.
We use a chemical wet etching method to texture the surfaces of monocrystalline solar cells, forming an inverted pyramid structure on the surfaces, which helps to reduce the surface reflectivity and increase light incidence into cell to generate carriers. In addition, we use ozone gas to oxidize aluminum instead of an ALD process, to obtain a cost-effective method to form the passivation layer of aluminum oxide on the back side of the wafer. With this passivation layer, negative charges can be produced at the Si/Al2O3 interface, which contribute a field-effect passivation. Therefore, the absorption of long-wavelength incident light can be increased, and the recombination rate can be reduced, leading to an increase in the minority carrier lifetime.

We use ozone gas to oxidize aluminum to form the aluminum oxide passivation layer on the back side.Various passivation layer process parameters, such as aluminum thickness, oxidation time, annealing temperature, and annealing time period for improving the lifetime of minority carrier are discussed. In order to verify the passivation effect of the aluminum oxide layer, XPS, TEM, CV measurement and IQE measurement were used. Finally, we obtained the best process parameters as follows: aluminum thickness 3nm, oxidation time 20 minutes, annealing temperature 600 °C for 90 seconds. The best conversion efficiency of the inverted pyramid PERC solar cell can reach 16.92%, which is 0.6% higher than the inverted pyramid solar cell without a PERC structure.

第1章 序論 1
1.1 前言 1
1.2 太陽能電池的發展 1
1.3 研究動機 6
1.4 論文架構 6
第2章 半導體物理 7
2.1 半導體材料 7
2.2 半導體材料鍵結與晶格結構 8
2.3 晶體結構 9
2.4 能帶與能隙 11
2.5 半導體載子產生與復合 15
2.6 半導體摻雜 17
2.7 半導體接面 20
第3章 太陽能電池原理 21
3.1 太陽光譜 21
3.2 太陽能電池基本原理 23
3.3 太陽能電池等效電路 25
3.4 太陽能電池電性參數 27
3.5 量子效率 29
3.6 太陽能電池之效率損失 30
3.7 氧化鋁場效鈍化 32
3.8 背表面場 33
3.9 C-V量測原理 34

第4章 實驗規劃與製程步驟 37
4.1 實驗架構 37
4.2 元件製作流程 38
4.3 實驗步驟 39
4.3.1 清洗 39
4.3.2 表面粗糙化 (Texture) 40
4.3.3 磷擴散 (Phosphorus diffusion) 40
4.3.4 背面拋光 (Rear side polish) 41
4.3.5 磷玻璃去除 (PSG removal) 41
4.3.6 背面氧化鋁薄膜製程 41
4.3.7 退火 (Annealing) 42
4.3.8 背面保護層沉積 42
4.3.9 黃光製程 43
4.3.10 抗反射層沉積(Anti-reflection coating，ARC) 45
4.3.11 網印電極(Screen printing) 46
4.3.12 共燒結(Co-firing) 47
4.4 量測儀器 48
第5章 實驗結果與討論 51
5.1 氧化鋁層之少數載子生命週期 51
5.1.1 蒸鍍不同厚度之鋁的影響 51
5.1.2 不同氧化時間的影響 56
5.1.3 不同退火溫度及退火時間的影響 60
5.1.4 少數載子生命週期隨時間之衰減 87
5.2 XPS元素分析 91
5.3 TEM量測 92
5.4 C-V量測 95
5.5 倒金字塔表面SEM量測 96
5.6 反射率之量測 98
5.7 背表面場SEM量測 103
5.8 元件轉換效率量測 106
5.9 量子效率量測 112
第6章 總結及未來展望 114

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