|
[1] L. Wang, J. Yoshida, N. Ogata, S. Sasaki, and T. Kajiyama, “Self-Assembled Supramolecular Films Derived from Marine Deoxyribonucleic Acid (DNA)−Cationic Surfactant Complexes: Large-Scale Preparation and Optical and Thermal Properties,” Chem. Mater., vol. 13, no. 4, pp. 1273–1281, Apr. 2001, doi: 10.1021/cm000869g. [2] Y.-C. Hung, T.-Y. Lin, W.-T. Hsu, Y.-W. Chiu, Y.-S. Wang, and L. Fruk, “Functional DNA biopolymers and nanocomposite for optoelectronic applications,” Optical Materials, vol. 34, no. 7, pp. 1208–1213, May 2012, doi: 10.1016/j.optmat.2012.01.035. [3] M. S. P. Reddy, P. T. Puneetha, Y.-W. Lee, S.-H. Jeong, and C. Park, “DNA-CTMA/a-Si:H bio-hybrid photodiode: A light-sensitive photosensor,” Organic Electronics, vol. 50, pp. 435–442, Nov. 2017, doi: 10.1016/j.orgel.2017.08.025. [4] L. Liang, Y. Mitsumura, K. Nakamura, S. Uemura, T. Kamata, and N. Kobayashi, “Temperature dependence of transfer characteristics of OTFT memory based on DNA-CTMA gate dielectric,” Organic Electronics, vol. 28, pp. 294–298, Jan. 2016, doi: 10.1016/j.orgel.2015.11.003. [5] J. A. Hagen et al., “Organic light emitting diode with a DNA biopolymer electron blocking layer,” in Organic Light Emitting Materials and Devices X, Dec. 2006, vol. 6333, p. 63330J, doi: 10.1117/12.682251. [6] S. Lai, “Non-volatile memory technologies: The quest for ever lower cost,” in 2008 IEEE International Electron Devices Meeting, Dec. 2008, pp. 1–6, doi: 10.1109/IEDM.2008.4796601. [7] J. J. Chang, “Nonvolatile semiconductor memory devices,” Proceedings of the IEEE, vol. 64, no. 7, pp. 1039–1059, Jul. 1976, doi: 10.1109/PROC.1976.10272. [8] T.-C. Chang, K.-C. Chang, T.-M. Tsai, T.-J. Chu, and S. M. Sze, “Resistance random access memory,” Materials Today, vol. 19, no. 5, pp. 254–264, Jun. 2016, doi: 10.1016/j.mattod.2015.11.009. [9] C. Wu, T. W. Kim, H. Y. Choi, D. B. Strukov, and J. J. Yang, “Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability,” Nature Communications, vol. 8, no. 1, Art. no. 1, Sep. 2017, doi: 10.1038/s41467-017-00803-1. [10] C. Ye et al., “Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review,” Journal of Materials Science & Technology, vol. 32, no. 1, pp. 1–11, Jan. 2016, doi: 10.1016/j.jmst.2015.10.018. [11] “Switching kinetics of electrochemical metallization memory cells - Physical Chemistry Chemical Physics (RSC Publishing) doi:10.1039/C3CP50738F. [12] I. Valov, “Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale,” ChemElectroChem, vol. 1, no. 1, pp. 26–36, Jan. 2014, doi: 10.1002/celc.201300165. [13] A. Prakash, D. Jana, and S. Maikap, “TaOx-based resistive switching memories: prospective and challenges,” Nanoscale Research Letters, vol. 8, no. 1, p. 418, Oct. 2013, doi: 10.1186/1556-276X-8-418. [14] A. Hardtdegen et al., “Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series,” in 2016 IEEE 8th International Memory Workshop (IMW), May 2016, pp. 1–4, doi: 10.1109/IMW.2016.7495280. [15] X. Zhu et al., “Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory,” Advanced Materials, vol. 24, no. 29, pp. 3941–3946, 2012, doi: 10.1002/adma.201201506. [16] Umberto Russo, D. Ielmini, C. Cagli, and A. Lacaita, “Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices,” undefined, 2009. doi: 10.1109/TED.2008.2010583 [17] U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, “Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices,” IEEE Transactions on Electron Devices, vol. 56, no. 2, pp. 193–200, Feb. 2009, doi: 10.1109/TED.2008.2010584. [18] D. I. Son et al., “Flexible Organic Bistable Devices Based on Graphene Embedded in an Insulating Poly(methyl methacrylate) Polymer Layer,” Nano Lett., vol. 10, no. 7, pp. 2441–2447, Jul. 2010, doi: 10.1021/nl1006036. [19] Q. Lai, Z. Zhu, Y. Chen, S. Patil, and F. Wudl, “Organic nonvolatile memory by dopant-configurable polymer,” Appl. Phys. Lett., vol. 88, no. 13, p. 133515, Mar. 2006, doi: 10.1063/1.2191874. [20] W.-J. Joo, T.-L. Choi, K.-H. Lee, and Y. Chung, “Study on Threshold Behavior of Operation Voltage in Metal Filament-Based Polymer Memory,” J. Phys. Chem. B, vol. 111, no. 27, pp. 7756–7760, Jul. 2007, doi: 10.1021/jp0684933. [21] J. Wj et al., “Metal filament growth in electrically conductive polymers for nonvolatile memory application,” J. Phys. Chem. B, vol. 110, no. 47, pp. 23812–23816, 2006. doi:10.1155/2011/702464 [22] M. Lauters, B. McCarthy, D. Sarid, and G. E. Jabbour, “Nonvolatile multilevel conductance and memory effects in organic thin films,” Appl. Phys. Lett., vol. 87, no. 23, p. 231105, Nov. 2005, doi: 10.1063/1.2138809. [23] J. Sun, Y. Fu, and Q. Wan, “Organic synaptic devices for neuromorphic systems,” J. Phys. D: Appl. Phys., vol. 51, no. 31, p. 314004, Jul. 2018, doi: 10.1088/1361-6463/aacd99. [24] W. Xu et al., “Organometal Halide Perovskite Artificial Synapses,” Advanced Materials, vol. 28, no. 28, pp. 5916–5922, 2016, doi: 10.1002/adma.201506363. [25] G. Liu et al., “Organic Biomimicking Memristor for Information Storage and Processing Applications,” Advanced Electronic Materials, vol. 2, no. 2, p. 1500298, 2016, doi: 10.1002/aelm.201500298. [26] H. Y. Choi, C. Wu, C. H. Bok, and T. W. Kim, “Organic electronic synapses with pinched hystereses based on graphene quantum-dot nanocomposites,” NPG Asia Materials, vol. 9, no. 7, Art. no. 7, Jul. 2017, doi: 10.1038/am.2017.133. [27] S. Li et al., “Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system,” J. Mater. Chem. C, vol. 1, no. 34, pp. 5292–5298, Aug. 2013, doi: 10.1039/C3TC30575A. [28] S. La Barbera, D. Vuillaume, and F. Alibart, “Filamentary Switching: Synaptic Plasticity through Device Volatility,” ACS Nano, vol. 9, no. 1, pp. 941–949, Jan. 2015, doi: 10.1021/nn506735m. [29] Y. V. Pershin and M. Di Ventra, “Experimental demonstration of associative memory with memristive neural networks,” Neural Networks, vol. 23, no. 7, pp. 881–886, Sep. 2010, doi: 10.1016/j.neunet.2010.05.001. [30] S. Duan, X. Hu, Z. Dong, L. Wang, and P. Mazumder, “Memristor-Based Cellular Nonlinear/Neural Network: Design, Analysis, and Applications,” IEEE Transactions on Neural Networks and Learning Systems, vol. 26, no. 6, pp. 1202–1213, Jun. 2015, doi: 10.1109/TNNLS.2014.2334701. [31] S. Park et al., “Neuromorphic speech systems using advanced ReRAM-based synapse,” in 2013 IEEE International Electron Devices Meeting, Dec. 2013, p. 25.6.1-25.6.4, doi: 10.1109/IEDM.2013.6724692. [32] F. Yang, M. Shtein, and S. R. Forrest, “Controlled growth of a molecular bulk heterojunction photovoltaic cell,” Nature Materials, vol. 4, no. 1, Art. no. 1, Jan. 2005, doi: 10.1038/nmat1285. [33] Y. Yang, P. Gao, S. Gaba, T. Chang, X. Pan, and W. Lu, “Observation of conducting filament growth in nanoscale resistive memories,” Nature Communications, vol. 3, no. 1, Art. no. 1, Mar. 2012, doi: 10.1038/ncomms1737. [34] C. Jiang et al., “Efficient two-terminal artificial synapse based on a network of functionalized conducting polymer nanowires,” J. Mater. Chem. C, vol. 7, no. 32, pp. 9933–9938, Aug. 2019, doi: 10.1039/C9TC02802A. [35] S. G. Hu et al., “Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor,” Appl. Phys. Lett., vol. 102, no. 18, p. 183510, May 2013, doi: 10.1063/1.4804374.
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