帳號:guest(216.73.216.146)          離開系統
字體大小: 字級放大   字級縮小   預設字形  

詳目顯示

以作者查詢圖書館館藏以作者查詢臺灣博碩士論文系統以作者查詢全國書目
作者(中文):黃齡蒂
作者(外文):Huang,Ling-Di
論文名稱(中文):DNA生物高分子應用於突觸記憶體元件之研究
論文名稱(外文):Study of DNA Biopolymer for Synaptic Device Application
指導教授(中文):洪毓玨
指導教授(外文):Hung,Yu-Chueh
口試委員(中文):莊偉綜
金雅琴
學位類別:碩士
校院名稱:國立清華大學
系所名稱:光電工程研究所
學號:107066502
出版年(民國):109
畢業學年度:108
語文別:中文
論文頁數:44
中文關鍵詞:去氧核醣核酸突觸元件生物高分子尖峰時序依賴可塑性成對促進脈衝仿生應用
外文關鍵詞:DNASynaptic DeviceBiopolymerSTDPPPFBionic application
相關次數:
  • 推薦推薦:0
  • 點閱點閱:188
  • 評分評分:*****
  • 下載下載:0
  • 收藏收藏:0
在過去的幾年中,DNA生物聚合物已用於各式各樣的元件中,其中有許多關於電阻式記憶體元件的研究應用。在這項研究中,我們探討將DNA生物聚合物用於突觸記憶元件的方法。首先在第一部分中,我們呈現在各種不同的製作條件下的元件性能,其中包括溶劑選擇,試劑濃度調整和塗佈的轉速調整。對元件施加驅動脈衝,對元件的電性進行量測分析,以確定最佳製作元件的條件。當對元件施加脈衝,元件的電阻率會有相對應的增強和抑制,並表現出良好的操作穩定性。接著在研究的第二部分中,我們進一步探究元件於突觸反應的一些重要測試,包括尖峰時間依賴可塑性(STDP)和成對脈衝促進作用(PPF)。通過施加不同數量的脈衝來探討脈衝數量與元件電阻率的關係,我們發現電阻率的維持與施加到元件上的脈衝數量相關,此特性可以模仿大腦中短期記憶轉向長期記憶的過程。這些研究結果展示了DNA生物材料於突觸記憶體元件具之可行性,可進一步發展生物材料於類神經網路之應用。
In the past years, DNA biopolymer has been used in a variety of devices and many demonstrations are reported in the application of resistive memory devices. In this study, we explored the employment of DNA biopolymer for synaptic memory elements. In the first part, we presented the device performance with respect to various fabrication conditions, including solvent selection, concentration of reagents, and coating parameters. Then, the electrical properties of the device, under various settings of driving pulses were characterized to determine the optimized operation conditions. The enhancement and suppression of device resistivity under the application of series of pulses were demonstrated with a good operation stability. In the second part of the study, we further presented measurement results for some important characters of synaptic responses, including spike-timing-dependent plasticity (STDP) and paired- pulse facilitation (PPF). The retention property was examined by applying different numbers of pulses and we show that the retention was correlated with the number of pulses applied to the device, mimicking well the transition process of short-term memory to long-term memory in our brain .Our study reveals that DNA biomaterials may be a promising candidate for synaptic device applications, paving the way towards further development of biomaterial-based neuromorphic circuit.
致謝 II
摘要 III
Abstract IV
目錄 V
圖目錄 VIII
表目錄 XI

第一章 緒論 1
1.1 前言 1
1.2 DNA簡介與應用 2
1.3 電阻式記憶體簡介 3
1.3.1. 電阻式記憶體發展 3
1.3.2. 電阻式記憶體運作機制 5
1.3.3. 有機電阻式記憶體 8
1.4 突觸元件介紹 8
1.4.1 突觸元件種類 8
1.4.2 突觸可塑性 11
1.4.3 突觸元件應用 12
1.5 研究動機 15

第二章 實驗方法 16
2.1 材料製作 16
2.1.1 DNA-CTMA合成 16
2.2 元件製作 17
2.3 量測儀器 19

第三章 突觸元件電性探討 22
3.1. 電阻對時間的變化 22
3.1.1. 不同溶劑對於形成DNA-CTMA薄膜造成電阻變化的影響 22
3.1.2. 不同DNA-CTMA薄膜厚度造成電阻變化的影響 24
3.1.3. 最佳化參數元件的電阻變化探討 26
3.2. 脈衝對元件電阻的影響 28
3.2.1. 脈衝持續時間(Ton)對於元件電阻變化的影響 28
3.2.3. 脈衝大小對於元件電阻變化 31
3.3. 元件增強和抑制表現(Potentiation and Depression) 31
3.4. 結論 33

第四章 突觸元件仿生之探討 34
4.1. 峰值時間依賴可塑性(STDP) 34
4.2. 成對脈衝刺激(PPF) 36
4.3. 短期記憶到長期記憶的轉換(STM to LTM) 37
4.4. 結論 40

第五章 結論與未來期許 41
參考文獻 42
[1] L. Wang, J. Yoshida, N. Ogata, S. Sasaki, and T. Kajiyama, “Self-Assembled Supramolecular Films Derived from Marine Deoxyribonucleic Acid (DNA)−Cationic Surfactant Complexes:  Large-Scale Preparation and Optical and Thermal Properties,” Chem. Mater., vol. 13, no. 4, pp. 1273–1281, Apr. 2001, doi: 10.1021/cm000869g.
[2] Y.-C. Hung, T.-Y. Lin, W.-T. Hsu, Y.-W. Chiu, Y.-S. Wang, and L. Fruk, “Functional DNA biopolymers and nanocomposite for optoelectronic applications,” Optical Materials, vol. 34, no. 7, pp. 1208–1213, May 2012, doi: 10.1016/j.optmat.2012.01.035.
[3] M. S. P. Reddy, P. T. Puneetha, Y.-W. Lee, S.-H. Jeong, and C. Park, “DNA-CTMA/a-Si:H bio-hybrid photodiode: A light-sensitive photosensor,” Organic Electronics, vol. 50, pp. 435–442, Nov. 2017, doi: 10.1016/j.orgel.2017.08.025.
[4] L. Liang, Y. Mitsumura, K. Nakamura, S. Uemura, T. Kamata, and N. Kobayashi, “Temperature dependence of transfer characteristics of OTFT memory based on DNA-CTMA gate dielectric,” Organic Electronics, vol. 28, pp. 294–298, Jan. 2016, doi: 10.1016/j.orgel.2015.11.003.
[5] J. A. Hagen et al., “Organic light emitting diode with a DNA biopolymer electron blocking layer,” in Organic Light Emitting Materials and Devices X, Dec. 2006, vol. 6333, p. 63330J, doi: 10.1117/12.682251.
[6] S. Lai, “Non-volatile memory technologies: The quest for ever lower cost,” in 2008 IEEE International Electron Devices Meeting, Dec. 2008, pp. 1–6, doi: 10.1109/IEDM.2008.4796601.
[7] J. J. Chang, “Nonvolatile semiconductor memory devices,” Proceedings of the IEEE, vol. 64, no. 7, pp. 1039–1059, Jul. 1976, doi: 10.1109/PROC.1976.10272.
[8] T.-C. Chang, K.-C. Chang, T.-M. Tsai, T.-J. Chu, and S. M. Sze, “Resistance random access memory,” Materials Today, vol. 19, no. 5, pp. 254–264, Jun. 2016, doi: 10.1016/j.mattod.2015.11.009.
[9] C. Wu, T. W. Kim, H. Y. Choi, D. B. Strukov, and J. J. Yang, “Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability,” Nature Communications, vol. 8, no. 1, Art. no. 1, Sep. 2017, doi: 10.1038/s41467-017-00803-1.
[10] C. Ye et al., “Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review,” Journal of Materials Science & Technology, vol. 32, no. 1, pp. 1–11, Jan. 2016, doi: 10.1016/j.jmst.2015.10.018.
[11] “Switching kinetics of electrochemical metallization memory cells - Physical Chemistry Chemical Physics (RSC Publishing) doi:10.1039/C3CP50738F.
[12] I. Valov, “Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale,” ChemElectroChem, vol. 1, no. 1, pp. 26–36, Jan. 2014, doi: 10.1002/celc.201300165.
[13] A. Prakash, D. Jana, and S. Maikap, “TaOx-based resistive switching memories: prospective and challenges,” Nanoscale Research Letters, vol. 8, no. 1, p. 418, Oct. 2013, doi: 10.1186/1556-276X-8-418.
[14] A. Hardtdegen et al., “Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series,” in 2016 IEEE 8th International Memory Workshop (IMW), May 2016, pp. 1–4, doi: 10.1109/IMW.2016.7495280.
[15] X. Zhu et al., “Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory,” Advanced Materials, vol. 24, no. 29, pp. 3941–3946, 2012, doi: 10.1002/adma.201201506.
[16] Umberto Russo, D. Ielmini, C. Cagli, and A. Lacaita, “Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices,” undefined, 2009. doi: 10.1109/TED.2008.2010583
[17] U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, “Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices,” IEEE Transactions on Electron Devices, vol. 56, no. 2, pp. 193–200, Feb. 2009, doi: 10.1109/TED.2008.2010584.
[18] D. I. Son et al., “Flexible Organic Bistable Devices Based on Graphene Embedded in an Insulating Poly(methyl methacrylate) Polymer Layer,” Nano Lett., vol. 10, no. 7, pp. 2441–2447, Jul. 2010, doi: 10.1021/nl1006036.
[19] Q. Lai, Z. Zhu, Y. Chen, S. Patil, and F. Wudl, “Organic nonvolatile memory by dopant-configurable polymer,” Appl. Phys. Lett., vol. 88, no. 13, p. 133515, Mar. 2006, doi: 10.1063/1.2191874.
[20] W.-J. Joo, T.-L. Choi, K.-H. Lee, and Y. Chung, “Study on Threshold Behavior of Operation Voltage in Metal Filament-Based Polymer Memory,” J. Phys. Chem. B, vol. 111, no. 27, pp. 7756–7760, Jul. 2007, doi: 10.1021/jp0684933.
[21] J. Wj et al., “Metal filament growth in electrically conductive polymers for nonvolatile memory application,” J. Phys. Chem. B, vol. 110, no. 47, pp. 23812–23816, 2006. doi:10.1155/2011/702464
[22] M. Lauters, B. McCarthy, D. Sarid, and G. E. Jabbour, “Nonvolatile multilevel conductance and memory effects in organic thin films,” Appl. Phys. Lett., vol. 87, no. 23, p. 231105, Nov. 2005, doi: 10.1063/1.2138809.
[23] J. Sun, Y. Fu, and Q. Wan, “Organic synaptic devices for neuromorphic systems,” J. Phys. D: Appl. Phys., vol. 51, no. 31, p. 314004, Jul. 2018, doi: 10.1088/1361-6463/aacd99.
[24] W. Xu et al., “Organometal Halide Perovskite Artificial Synapses,” Advanced Materials, vol. 28, no. 28, pp. 5916–5922, 2016, doi: 10.1002/adma.201506363.
[25] G. Liu et al., “Organic Biomimicking Memristor for Information Storage and Processing Applications,” Advanced Electronic Materials, vol. 2, no. 2, p. 1500298, 2016, doi: 10.1002/aelm.201500298.
[26] H. Y. Choi, C. Wu, C. H. Bok, and T. W. Kim, “Organic electronic synapses with pinched hystereses based on graphene quantum-dot nanocomposites,” NPG Asia Materials, vol. 9, no. 7, Art. no. 7, Jul. 2017, doi: 10.1038/am.2017.133.
[27] S. Li et al., “Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system,” J. Mater. Chem. C, vol. 1, no. 34, pp. 5292–5298, Aug. 2013, doi: 10.1039/C3TC30575A.
[28] S. La Barbera, D. Vuillaume, and F. Alibart, “Filamentary Switching: Synaptic Plasticity through Device Volatility,” ACS Nano, vol. 9, no. 1, pp. 941–949, Jan. 2015, doi: 10.1021/nn506735m.
[29] Y. V. Pershin and M. Di Ventra, “Experimental demonstration of associative memory with memristive neural networks,” Neural Networks, vol. 23, no. 7, pp. 881–886, Sep. 2010, doi: 10.1016/j.neunet.2010.05.001.
[30] S. Duan, X. Hu, Z. Dong, L. Wang, and P. Mazumder, “Memristor-Based Cellular Nonlinear/Neural Network: Design, Analysis, and Applications,” IEEE Transactions on Neural Networks and Learning Systems, vol. 26, no. 6, pp. 1202–1213, Jun. 2015, doi: 10.1109/TNNLS.2014.2334701.
[31] S. Park et al., “Neuromorphic speech systems using advanced ReRAM-based synapse,” in 2013 IEEE International Electron Devices Meeting, Dec. 2013, p. 25.6.1-25.6.4, doi: 10.1109/IEDM.2013.6724692.
[32] F. Yang, M. Shtein, and S. R. Forrest, “Controlled growth of a molecular bulk heterojunction photovoltaic cell,” Nature Materials, vol. 4, no. 1, Art. no. 1, Jan. 2005, doi: 10.1038/nmat1285.
[33] Y. Yang, P. Gao, S. Gaba, T. Chang, X. Pan, and W. Lu, “Observation of conducting filament growth in nanoscale resistive memories,” Nature Communications, vol. 3, no. 1, Art. no. 1, Mar. 2012, doi: 10.1038/ncomms1737.
[34] C. Jiang et al., “Efficient two-terminal artificial synapse based on a network of functionalized conducting polymer nanowires,” J. Mater. Chem. C, vol. 7, no. 32, pp. 9933–9938, Aug. 2019, doi: 10.1039/C9TC02802A.
[35] S. G. Hu et al., “Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor,” Appl. Phys. Lett., vol. 102, no. 18, p. 183510, May 2013, doi: 10.1063/1.4804374.

(此全文未開放授權)
電子全文
中英文摘要
 
 
 
 
第一頁 上一頁 下一頁 最後一頁 top
* *