本實驗研究的目的在於二次退火對於PERC太陽能電池背面氧化鋁鈍化層，對於太陽能電池性能的影響。實驗中使用兩種不同晶片分別進行比較，其中一種是由中美矽晶公司沉積三氧化二鋁的晶片，另一種是由清大奈米中心所沉積三氧化二鋁的晶片。為了比較兩種晶片沉積三氧化二鋁前後的差異，由WCT-120找出各種晶片最佳的少數載子生命週期。
首先要找出三氧化二鋁與矽接面上最佳的場鈍化效果，必須找出氧化鋁層最佳的退火時間與退火溫度。中美矽晶公司使用的機台為原子層沉積，其所沉積出的氧化鋁進行退火，得到最佳退火時間為60秒，最佳退火溫度為700℃；而清大奈米中心使用的原子層沉積機台，所沉積出的氧化鋁進行退火，得到最佳退火時間為10分鐘，最佳退火溫度為525℃。
接著在晶片背面會鍍上氮化矽層，並進行二次退火步驟。而這兩種晶片的最佳二次退火時間皆為10分鐘，最佳退火溫度為400℃。最後在最佳參數的條件下所做出的PERC太陽能電池得到最高轉換效率為17.63%。而對於僅進行一次退火的PERC太陽能電池效率相比平均約有0.22%的提升。

The purpose of this study is to investigate the effect of second annealing on the performance of PERC silicon solar cells with rear-side aluminum oxide passivation layers .Two kinds of wafers were applied in the experiment. Al2O3 layers of the one kind were deposited by the Sino-American Silicon Products Inc ( SASPI ), and the other kind were deposited by the Center For Nanotechnology, Materials Science, and Microsystems, National Tsing Hua University(NTHU). In order to compare the difference between two kinds of wafers, the WCT-120 was used to find the best minority carrier lifetime for each kind.
First of all, to provide a good field-effect passivation at the Al2O3/Si interface, finding the best annealing time and annealing temperature is necessary.The best annealing time and annealing temperature for the wafers from SASPI were 60 seconds, and 700℃, respectively. For the wafers with oxide layers deposited by the atomic layer deposition(ALD) technique at NTHU, the best annealing time and annealing temperature were, respectively, 10 minutes and 525℃.
Subsequently, the back sides of these wafers were coated with silicon nitride layers and were processed with a second-time annealing. Both of their best times for the second-time annealing were 10 minutes, and the best annealing temperature was 400°C. At the best annealing condition, the PERC solar cells with ALD-deposited aluminum oxide layers have the best conversion efficiency of 17.63 %. With respect to the cells processed by only one annealing, this corresponds to an improvement of 0.22% on average.

目錄
第一章 序論 1
1.1前言 1
1.2太陽能電池歷史 2
1.3 研究目的 7
1.4 論文架構 7
第二章 研究理論 8
2.1基礎半導體物理 9
2.1-1半導體材料簡介 9
2.1.1晶格結構 10
2.1.2能帶理論 14
2.1.3直接能隙與間接能隙 16
2.1.4產生與複合 17
2.1.5摻雜 18
2.1.5 P-N接面 19
2.1-2太陽能電池基本原理 20
2.2.1太陽能光譜 20
2.2.2太陽電池工作原理 21
2.2.3太陽能電池等效電路 22
2.3.4太陽能重要參數 24
2.3.5效率損失因素 26
2.3.6氧化鋁鈍化層 27
2.3.7背表面場 28
2.3.8 C-V量測 29
第三章 研究方法與製程步驟 32
3.1實驗架構 32
3.2元件製作流程 34
3.3實驗步驟 34
3.3.1 RCA clean 35
3.3.2表面粗糙化 35
3.3.3磷擴散 35
3.3.4 拋光 36
3.3.5 磷玻璃去除 36
3.3.6 晶邊絕緣 36
3.3.7 原子層沉積 37
3.3.8 退火 38
3.3.9 氮化矽保護層 38
3.3.10 黃光製程 39
3.3.11 正面氮化矽抗反射層 41
3.3.12 網印 41
3.3.13 電極共燒 42
3.4操作儀器介紹 42
第四章 數據分析與討論 46
4.1少數載子生命週期 46
4.2 少數載子生命週期衰退 60
4.3 SiNx與鈍化層之相關參數 62
4.4 TEM量測 64
4.5 C-V量測 68
4.6 反射率量測 69
4.7 BSF厚度 70
4.8 元件I-V量測 74
4.9 量子轉換效率 82
第五章 結論 83
參考文獻 85

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