本論文旨在探討銦/矽蕭特基光二極體在室溫下的運作，此接面可做為一紅外光感測器。選用銦金屬做為接面材料之一，主要利用它與矽產生的蕭特基能障很小，可用來偵測長波長的紅外光。由於在室溫下，元件產生出的暗電流較大，難以將光電流區別開來，因此我們將元件操作在零偏壓下，以降低暗電流。我們並將元件外接一轉阻放大電路，藉由此放大電路將光電流訊號轉為電壓訊號，便於觀測。為了使元件的雜訊降低，在量測時，藉由量測儀器內部的低通濾波功能，將熱雜訊以平均的方式消除。論文中亦探討此蕭特基接面的電性、元件照光下光電性質、以及經由放大電路後訊號的比較。

This thesis studies the feasibility of using an indium-silicon Schottky junction as an infrared photodetector at room temperature. The Schottky barrier between silicon and indium is suitable for infrared detection. It is difficult to separate dark current and photocurrent at room temperature. Therefore, the device is operated at zero bias to reduce dark current. Furthermore, a transimpedance amplifier circuit is connected to the device for turning the current signal to voltage signal.

The built-in low-pass filter in the device analyzer is applied during the measurement to suppress noise signal. The thermal noise can be eliminated by averaging. The electrical properties of Schottky junction, the optoelectronic characteristics, and the comparisons of amplified signal are included in this thesis.

摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VI
表目錄 VIII
第一章 緒論 1
1.1前言 1
1.2研究動機 2
1.3論文章節架構 3
第二章 光感測器原理 4
2.1半導體光激發原理 4
2.2 P-N接面光二極體 5
2.3蕭特基接觸與歐姆接觸 6
2.4 金半蕭特基光二極體 9
2.5 光偵測器重要參數 10
2.5.1吸收係數 10
2.5.2量子效率 11
2.5.3響應度 12
2.5.4響應速度 12
2.5.5暗電流與雜訊 13
第三章 元件設計與驗證 15
3.1材料選擇 15
3.1.1 n+型矽基板 15
3.1.2 銦金屬薄膜 16
3.1.3 元件結構設計 17
3.2實驗方法與步驟 18
3.2.1 基板清潔 18
3.2.2 蒸鍍銦薄膜 18
3.2.3 樣品量測 20
3.3放大電路介紹 21
第四章 量測結果與討論 23
4.1 量射儀器介紹 23
4.2 量測方式 24
4.2.1歐姆測試 24
4.2.2 接面電流對電壓量測 25
4.2.3光電流量測 26
4.2.4輸出電壓量測 27
4.3 量測結果 27
4.3.1電性量測 27
4.3.2光電流量測 30
4.3.3輸出電壓量測 34
第五章 結論與未來展望 45
參考文獻 46

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