有機太陽能電池，也可稱作有機光伏（Organic photovoltaic, OPV），在這幾年來因非富勒烯電子受體所造成的重大突破而取得了巨大進步，使用富勒烯受體有大約10 ％的功率轉換效率紀錄，若使用非富勒烯受體，效率可提高到約15 ％，因此能預期在不久的將來OPV會成為一種新能源技術。而本實驗即是以台灣天光材料科技股份有限公司(Raynergy Tek Inc.)之非富勒烯材料NF3000-N與NF3000-P搭配氯苯(Chlorobenzene)作為溶劑，加上DIO界面活性劑，採用正結構，以ITO為陽極，蒸鍍製程的鋁為陰極利用刮刀塗佈技術在大面積(216cm2)、中面積(10.8cm2)和小面積(0.04cm2)的元件上，效率分別突破9%、9.9%及12.3%。
在有高效率的元件表現下，本實驗也探討除了主動層材料對於初始效率的影響外，也比較不同介面層之間對於效率表現的影響，從中能發現不同溶劑對於介面層刮塗的適合性。相較於過去較常使用的介面層，如：LiF及ZrOx，我使用Al-doped ZnO和與吉林大學李楓紅教授合作的材料TASiW-12，起初於小面積上以TASiW-12進行實驗時，發現介面層若濃度過高會對下方主動層的均勻性造成肉眼可見的膜面破壞，但是在元件的效率表現上卻沒有明顯的影響；轉為中面積及大面積後，一樣的膜面破壞則有相較於小面積相反的效率表現，代表隨著元件的有效面積放大，不論主動層或是介面層的膜面平整度及膜厚對於最終效率表現都有逐漸明顯化的趨勢。隨後以Al-doped ZnO作為介面層亦有此現象的發現，而能馬上進行調整，而結果也確實如一開始所預期的有所改善，但相較於TASiW-12，其元件初始效率的表現上略遜一籌，由此可知，除了介面層的濃度及刮塗參數調整以外，還有更重要的是介面層材料的挑選，才得以將元件效率衝高。

Organic solar cells, also known as Organic photovoltaic (OPV), have made tremendous progress in the past few years due to major breakthroughs caused by non-fullerene electron acceptors. The use of fullerene acceptors is about 10%. According to the power conversion efficiency (PCE) record, if a non-fullerene acceptor is used, the efficiency can be increased to about 15%, so it can be expected that OPV will become a new energy technology in the near future. In this experiment, the non-fullerene materials NF3000-N and NF3000-P of Taiwan’s Raynergy Tek Inc. were used with Chlorobenzene as the solvent, and the surfactant DIO was used. Structure, with ITO as the anode and aluminum of the evaporation process as the cathode. Using the blade coating technique, the efficiency of our devices exceeds 9%, 9.9% and 12.3% on large size (216 cm2), medium size (10.8 cm2) and small size (0.04 cm2) respectively.
In the performance of high-efficiency devices, this experiment also explored the influence of different interlayer materials on the efficiency performance in addition to the influence of the active layer material on the initial efficiency, from which we can find the suitability of different solvents for the coating of the interface layer. Compared with the more commonly used interlayer materials in the past, such as: LiF and ZrOx, I used Al-doped ZnO and the material TASiW-12 which is in cooperation with Professor Feng Hong Li of Jilin University. When I first experimented with TASiW-12 on small-size devices, I found if the concentration of the interlayer solution is too high, it will cause visual damage to the active layer surface and also break the uniformity of the underlying active layer, but there is no obvious influence on the performance of the device ; after turning into medium-size and large-size devices, compared with the small-size,device, the film surface damage will keep the same ,but the efficiency performance is opposite, which means that as the effective area of the device is enlarged, the flatness and film thickness of the active layer or the interlayer will gradually become more obvious for the final efficiency performance. Later, Al-doped ZnO is also used as the interlayer to find this phenomenon, which can be adjusted immediately, and the result did improve as expected at the beginning, but compared with TASiW-12, the device’s initial efficiency performance is slightly inferior. It can be seen that, in addition to the concentration of the interlayer solution and the adjustment of the blade coating parameters, there is more important thing is the selection of the interlayer materials, so that the initial efficiency can be increased.

摘要------------------------------------------------------------------------------------------------i
Abstract-------------------------------------------------------------------------------------------iii
致謝-----------------------------------------------------------------------------------------------iv
目錄-----------------------------------------------------------------------------------------------vi
圖目錄--------------------------------------------------------------------------------------------ix
表目錄------------------------------------------------------------------------------------------xiii
第一章、緒論 --------------------------------------------------------------------------------1
1.1研究背景-----------------------------------------------------------------------------------1
1.1.1前言與太陽電池發展過程--------------------------------------------------------1
1.1.2有機太陽電池簡介-----------------------------------------------------------------3
1.2研究動機 ---------------------------------------------------------------------------------7
1.2.1高分子有機材料應用於太陽電池之優勢--------------------------------------7
1.2.2有機太陽電池之高分子材料主動層--------------------------------------------8
1.2.3有機太陽電池之介面修飾層----------------------------------------------------9
1.2.4半透明有機太陽電池-------------------------------------------------------------10
1.3文獻回顧---------------------------------------------------------------------------------11
1.3.1刮刀塗佈製程之有機發光二極體(OLED)------------------------------------11
1.3.2刮刀塗佈製程之有機太陽電池(OPV)-----------------------------------------12
1.4論文架構---------------------------------------------------------------------------------14
第二章、實驗原理 -----------------------------------------------------------------------15
2.1太陽電池詳細介紹---------------------------------------------------------------------15
2.1.1太陽電池原理----------------------------------------------------------------------15
2.1.2太陽電池之理想與實際等效電路分析----------------------------------------16
2.1.3太陽電池之各項重要參數------------------------------------------------------19
2.1.4太陽電池之元件表現分析------------------------------------------------------22
2.2太陽電池之有機材料介紹-----------------------------------------------------------25
2.2.1有機半導體之能帶理論---------------------------------------------------------26
2.2.2有機半導體之共軛高分子材料特性------------------------------------------27
2.3本論文所使用之元件結構與能帶圖------------------------------------------------28
2.4本論文所使用之材料與其結構介紹------------------------------------------------34
2.4.1有機太陽電池之主動層材料----------------------------------------------------34
2.4.2陽極材料----------------------------------------------------------------------------37
2.4.3陰極與介面修飾層材料----------------------------------------------------------37
2.4.4 TASiW-12詳細介紹--------------------------------------------------------------41
2.4.5電洞傳輸層材料-------------------------------------------------------------------42
2.4.6額外添加之材料-------------------------------------------------------------------42
第三章、實驗方法與流程--------------------------------------------------------------44
3.1本論文之元件製作流程---------------------------------------------------------------44
3.2 ITO基板模組蝕刻---------------------------------------------------------------------45
3.3 ITO基板之標準清洗流程------------------------------------------------------------50
3.4刮刀塗佈系統製程---------------------------------------------------------------------51
3.5電洞傳輸層(Hole Transport Layer, HTL)----------------------------------------51
3.6高分子主動層材料之刮刀塗佈成膜------------------------------------------------54
3.7陰極介面修飾層材料之成膜---------------------------------------------------------55
3.7.1刮刀塗佈製程----------------------------------------------------------------------55
3.7.2蒸鍍製程----------------------------------------------------------------------------55
3.8陰極電極蒸鍍---------------------------------------------------------------------------57
3.9元件封裝---------------------------------------------------------------------------------58
3.10元件電性量測-------------------------------------------------------------------------59
第四章、實驗結果與討論--------------------------------------------------------------63
4.1初期三元系統(Ternary)PBDB-T:ITIC:PC71BM元件表現--------------------63
4.2介面修飾層厚度對於元件表現之影響---------------------------------------------65
4.2.1 NF3000材料搭配調整濃度前後之TASiW-12於各面積不透明之元件表 現-------------------------------------------------------------------------------------------------65
4.2.2 NF3000材料搭配調整濃度前後之Al-doped ZnO於各面積不透明之元件表現-------------------------------------------------------------------------------------------74
4.3介面修飾層搭配溶劑之挑選---------------------------------------------------------78
4.4不同主動層材料搭配各介面修飾層材料比較------------------------------------82
4.4.1 NF3000材料搭配LiF、ZrOx、TASiW-12與Al-doped ZnO不透明之元件表現-------------------------------------------------------------------------------------------82
4.4.2 ITIC-M材料搭配LiF、ZrOx、TASiW-12與Al-doped ZnO不透明之元件表現-------------------------------------------------------------------------------------------85
4.4.3三元材料搭配TASiW-12與 Al-doped ZnO不透明之元件表現--------88
4.4.4新興材料PBDB-T-2F:Y6搭配TASiW-12與Al-doped ZnO不透明之元件表現-------------------------------------------------------------------------------------------90
4.5各介面修飾層材料之結果比較------------------------------------------------------92
第五章、結論與未來展望--------------------------------------------------------------93
參考文獻----------------------------------------------------------------------------------------94

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