本論文主要目的為研製可在1100 nm ~ 1700 nm 波段的光纖通訊系統與光達偵測系統中使用的陣列雪崩光二極體。在磷化銦基板上(InP substrate)，用有機金屬化學氣相沉積系統(MOCVD)，分別製作出磷化銦/砷化銦鎵(InP/InGaAs)和砷化銦鋁/砷化銦鎵(InAlAs/InGaAs)兩種不同結構的雪崩光二極體磊晶層。每顆雪崩光二極體的直徑大小為200 微米，為了方便量測而鍍上寬為60微米的金屬環，收光面積則為直徑60微米。
對於磷化銦/砷化銦鎵材料的雪崩光二極體，是採用平面式(Planar)結構，搭配5微米寬的保護環和浮動保護環，使雪崩光二極體擁有較低的漏電流和高穩定性的特性。在製程中，是使用氮化矽作為擴散阻擋層和鈍化層，分別用來定義擴散區域以及降低元件漏電流。P型區域是利用快速熱擴散的技術，使用的材料是鋅原子，將未參雜的磷化銦覆蓋層形成P型磷化銦覆蓋層，進而形成雪崩光二極體。此外，不同增益層厚度和崩潰電壓的關係也會在此論文中進行討論，最後做出2x2陣列雪崩光二極體，在-5V時的漏電流為1.34nA ± 2.2nA，95%崩潰電壓為 -26.78V ± 1.04V，並擁有增益14.6 ± 4.37。
對於砷化銦鋁/砷化銦鎵材料的雪崩光二極體，搭配快速熱擴散與適當的熱退火技術，在Mesa內形成良好的P型歐姆接觸。在製程中，一樣使用氮化矽作為擴散阻擋層和鈍化層，分別用來形成P型歐姆接觸和降低元件漏電流。擴散時一樣是使用鋅原子當作材料，並形成P型磷化銦覆蓋層，最後形成雪崩光二極體。相較於經由擴散而定義出累增層厚度的磷化銦/砷化銦鎵雪崩光二極體，砷化銦鋁/砷化銦鎵雪崩光二極體的累增層是經由MOCVD磊晶磊好的，因此其元件特性的均勻性相當高，這對於陣列雪崩光二極體是十分重要的。最後得到4x4陣列雪崩光二極體，在-5V時的漏電流為5.73nA ± 0.075nA，95%崩潰電壓為 -24.79V ± 0.18V，並擁有增益6.93 ± 0.6。

The main purpose of this thesis is to fabricate avalanche photodiode array that can be used in optical fiber communication systems and LIDAR detection systems, the operation wavelength is between 1100 nm to 1700 nm . On an InP substrate, a metalorganic chemical vapor deposition system (MOCVD) was used to epitaxy InP/InGaAs and InAlAs/InGaAs two different structures of avalanche photodiode epitaxial layers. The diameter of each avalanche photodiode was 200 um. For the convenience of measurement, a metal ring with a width of 60 um was deposited, and the light absorption area was 60 um in diameter.
For avalanche photodiodes made of InP/InGaAs, a planar structure was used, with a 5 um wide guard ring and floating guard ring, so that the avalanche photodiode has lower leakage current and high stability characteristics. In our process, SiNx film was chosen for diffusion hard mask and the passivation layer, which was used to define the diffusion region and reduce the device leakage current, respectively. The P-type region is a technique that uses rapid thermal diffusion process (RTD). The material used was Zinc. The undoped InP cap layer forms a P-type InP cap layer, which in turn forms an avalanche photodiode. In addition, the relationship between the thickness of the different multiplication layers and the breakdown voltage will also be discussed in this thesis. Finally, a 2x2 array avalanche photodiode is made. The leakage current at -5V is 1.34nA ± 2.2nA, and the 95% breakdown voltage is - 26.78V ± 1.04V, and has a gain of 14.6 ± 4.37.
For avalanche photodiodes made of InAlAs/InGaAs, combined with rapid thermal diffusion process (RTD) and appropriate rapid thermal annealing technology, to form a good P-type ohmic contact inside the Mesa area. In our process, SiNx film was also used as a diffusion hard mask and a passivation layer, which was used to form P-type ohmic contacts and reduce device leakage current, respectively. During diffusion, Zinc atoms were used as materials, and a P-type InP cap layer was formed. Finally, an avalanche photodiode was finished. Compared with the InP/InGaAs avalanche photodiode whose multiplication layer thickness is defined by diffusion, the multiplication layer thickness of InAlAs/InGaAs avalanche photodiode is accurately controlled by MOCVD epitaxy growth. The uniformity of the device characteristics is quite high, which is very important for avalanche photodiode array. Finally, a 4x4 array avalanche photodiode was obtained. The leakage current at -5V is 5.73nA ± 0.075nA, the 95% breakdown voltage is -24.79V ± 0.18V, and the gain is 6.93 ± 0.6.

摘要 ---------------------------------------------------------- I
Abstract ---------------------------------------------------- III
致謝 ---------------------------------------------------------- V
Contents ----------------------------------------------------- VI
List of Figures -------------------------------------------- VIII
List of Tables ----------------------------------------------- XI
Chapter1. Introduction ---------------------------------------- 1
1-1 Introduction to APD device -------------------------------- 1
1-2 Resaerch motivation --------------------------------------- 3
Chapter 2. The Basic Theory ----------------------------------- 8
2-1 The Basic Theory of Avalanche Photodiode ------------------ 8
2-2 SAGCM structure ------------------------------------------ 10
2-3 InP/InGaAs Avalanche Photodiode -------------------------- 11
2-4 InAlAs/ InGaAs Avalanche Photodiode ---------------------- 12
2-5 Multiplication Gain -------------------------------------- 13
2-6 Dark Current Mechanism ----------------------------------- 15
2-7 Responsivity and Quantum Efficiency ---------------------- 19
2-8 Junction Capacitance ------------------------------------- 20
2-9 Transmission-Line Model ---------------------------------- 21
2-10 Characterization Instruments ---------------------------- 22
Chapter 3. Design and Fabrication of Avalanche Photodiode ---- 30
3-1 InP / InGaAs APD ----------------------------------------- 30
3-1-1 Device structure --------------------------------------- 30
3-1-2 Mask Design concept ------------------------------------ 31
3-1-3 Hard mask deposition and Wet etching ------------------- 33
3-1-4 Thermal Drive-in Process ------------------------------- 34
3-1-5 Process steps and Experimental details of APD device --- 35
3-2 InAlAs / InGaAs APD -------------------------------------- 41
3-2-1 Device structure --------------------------------------- 42
3-2-2 Mask Design concept ------------------------------------ 43
3-2-3 Mesa by Dry etching and Passivation -------------------- 44
3-2-4 Fabrication Process of p-metal & n-metal TLM ----------- 44
3-2-5 Process steps and Experimental details of APD device --- 48
Chapter 4. Results and Discussion ---------------------------- 63
4-1 Characteristics of InP / InGaAs APD ---------------------- 63
4-1-1 Multiplication thickness VS. Breakdown voltage --------- 63
4-1-2 Characteristics of single APD -------------------------- 64
4-1-3 Characteristics of 2x2 APD array ----------------------- 66
4-2 Characteristics of InAlAs / InGaAs APD ------------------- 74
4-2-1 Characteristics of 4x4 APD array ----------------------- 74
4-3 Component Comparison and Application --------------------- 83
4-3-1 Variable Temperature Measurement ----------------------- 83
4-3-2 Bonding Demo ------------------------------------------- 85
Chapter 5. Conclusions and future work ----------------------- 95
5-1 Conclusions ---------------------------------------------- 95
5-2 Future work ---------------------------------------------- 95
Reference----------------------------------------------------- 98

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