自1990年代開始，半導體技術發展與摩爾定理密不可分，金氧半場效電晶體(MOSFET)元件尺寸微縮所面臨的問題，如擊穿崩潰、漏電流等等限制，也在世界各國的研究人員努力下，以各種新結構與技術一一克服。當製程微縮至20奈米以下，平面型結構發展面臨困境，取而代之的是對閘極以立體形狀包覆的鰭式場效應電晶體，藉以提高閘極控制的有效面積，使其降低關閉時漏電。
在邏輯製程步驟中，微影(lithography)製程是推動臨界尺寸的關鍵之一，其使用了大量的極紫外光與電子束，而常見的光子與電子感測器有電荷耦合器件(Charge-coupled Device, CCD)與主動式像素感測器(Active Pixel Sensor, APS)，利用位能井的捕捉和浮動電位的吸引來蒐集光電二極體(photodiode)產生之光電子。然而，像素(pixel)的組成使用光電二極體與多個電晶體，為確保訊號完整，往往需要特殊的電荷傳遞通道或周邊電路，因此，具有製程相容性與高密度發展性的感測元件需求是必然的。
在此篇論文中，提出了以FinFET製程下提出了一個接觸槽耦合浮動閘極之電子束偵測元件，利用接觸槽以耦合電壓方式，感應電子束直寫時產生的高負電壓至浮動閘極，依靠電位差排斥浮動閘極之電荷進入基底，將正電荷儲存在浮動閘極，在不需要外加電源下，可以同時感測並記錄晶圓上的電子束劑量。

The development of semiconductor technology follows Moore's Law for past decades, various challenges faced by scaling the critical dimension of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) have been solved by researchers around the world. As technology node scaled down to below 20 nanometers, and the development of the planar structure faces critical challenges. Fin-shaped field effect transistor (FinFET) with a three-dimensional coverage for the gate is proposed, which increases the gate control to the channel, reducing the off-state leakage current.
In current CMOS processes, the lithography process is one of the keys to promote critical dimensions, in which EUV and ebeam are used. Charge-coupled devices and Active Pixel Sensor (APS) are common used in photon and electron sensors, utilizing the potential well and floating node to collect photoelectrons induced by photoelectric effects. Each pixel generally composed of photodiodes and multiple transistors. To ensure the integrity of the signal, special channels for charge transfer or peripheral circuits are also required. Therefore, the need for special process for these sensor development are inevitable.
In this research, a novel floating gate ebeam detector using contact coupling is proposed in advanced FinFET processes. High negative voltage on a sensing pad charging by ebeam is coupled to the floating gate. The positive charges are stored in the floating gate in response to the in-flux of ebeam can reflect the intensity of the beam, which simultaneously recorded on-chip without external power.

摘要 i
Abstract ii
致謝 iii
內文目錄 iv
附圖目錄 vi
附表目錄 viii
第一章 序論 1
1-1 浮動閘極非揮發性記憶體介紹 1
1-2 研究動機 2
1-3 論文大綱 3
第二章 電子束感測技術回顧與發展 7
2-1 電荷耦合器件(Charge-coupled Device, CCD) 7
2-2 單相主動式像素感測器(Active Pixel Sensor, APS) 8
2-3 新型接觸槽耦合浮動閘極電子束偵測元件 9
第三章 電子束偵測元件與操作機制 14
3-1 元件結構與製程介紹 14
3-1-1 元件結構 14
3-1-2 製程介紹 15
3-2 載子注入浮動閘極機制回顧 16
3-2-1 穿隧效應(Fowler-Nordheim, FN) 16
3-2-2 通道熱電子注入機制(Channel Hot Electron, CHE) 17
3-3 元件操作機制與耦合結構設計 18
3-3-1 浮動閘極之耦合電容 18
3-3-2 接觸槽電容之耦合比率與次臨限擺幅 18
3-4 元件電性模型 20
3-4-1 能量感測平板充電情形 20
3-4-2 時間常數與載子移動相關性 20
3-5 不同能量電子束之元件穿透情形 21
3-6 小結 22
第四章 電子束偵測元件量測與分析 32
4-1 實驗與量測環境 32
4-1-1 實驗裝置與參數設定 32
4-1-2 量測裝置及機台設定 33
4-2 基本特性量測分析 34
4-3 不同電子束劑量之反應 35
4-4 不同電子束能量之影響 36
4-5 資料儲存特性 38
4-6 其他耦合方式之可能性 38
4-6-1金屬絕緣層金屬電容 38
4-6-2阱耦合電容 39
4-7 小結 39
第五章 總結 54
5-1 元件與現行方法之比較 54
5-2 結語與未來展望 55
參考文獻 57

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