近年來主流應用於室溫的熱電材料為稀少且有毒的元素如銻、鉍和碲，使得熱電材料的發展受到很大的限制，而非晶矽儘管在室溫下的熱電優值差強人意，卻有著取得容易且對環境友善的優點，因此本論文會以非晶矽作為基礎，探討N型和P型的非晶矽在經過不同的快速熱處理的條件後，於室溫下的熱電優值，期望能突破非晶矽在熱電材料應用上的先天限制。
我們選用導熱度極佳的氮化鋁作為基板，在上面先以電子鎗鍍上適當的背電極圖形，接著以電漿增強化學氣相沉積法分別沉積出N型、P型和本徵的非晶矽後，再同樣以電子鎗鍍上正電極，使得電流能在基板的垂直方向上流動，形成一端為吸熱端，另一端為放熱端的構造，最後我們再對其快速熱處理，並比較快速熱處理前後的熱電優值。
量測結果發現，藉由適當的快速熱處理，可以在維持住塞貝克係數和導熱率的條件下，大幅提升導電率，進而改善非晶矽的熱電優值。

The dominant thermoelectric materials nowadays used in the room temperature range usually contain rare and toxic elements like antimony, bismuth and tellurium. It greatly restricts the development of the thermoelectric materials. Meanwhile, silicon is environment friendly and has been used in semiconductor industry a lot for decades despite its poor thermoelectric figure of merit. In this thesis, n-type and p-type amorphous silicon with different rapid thermal processing is used to compare the thermoelectric figure of merit at room temperature. The breakthrough of the thermoelectric application of silicon at room temperature is expected.
The substrate is aluminum nitride mainly because of its good thermal conductivity. The first layer is patterned titanium plated by e-gun. The second layer is patterned n-type or p-type amorphous silicon by plasma-enhanced chemical vapor deposition. The third layer is patterned titanium also plated by e-gun. Therefore, when voltage is supplied, current flows in the vertical direction, which makes the one side heat-absorbed and the other side heat-released. Last, rapid thermal processing was applied to elevate the thermoelectric figure of merit.
The result reveals that the electrical conductivity increases sharply but the thermal conductivity and the Seebeck coefficient are kept under specific rapid thermal processing condictions. This elevated the thermoelectric figure of merit as a result.

摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VI
表目錄 VIII
第一章 緒論 1
1.1 前言 1
1.2研究動機 2
1.3論文章節架構 3
第二章 基本理論 4
2.1熱電原理 4
2.2塞貝克效應 4
2.3 帕爾帖效應 6
2.4 湯姆森效應 7
2.4 熱電優值 8
第三章 文獻回顧 10
3.1熱電發展歷史 10
3.2近年熱電發展 12
第四章 非晶矽元件 17
4.1非晶矽基本特性 17
4.2元件架構設計 18
4.3元件的製程 24
4.3.1氮化鋁基板 24
4.3.2電子鎗真空蒸鍍系統 25
4.3.3電漿增強化學氣相沉積系統 26
4.3.4快速熱處理系統 29
第五章 量測結果與討論 31
5.1量測方式與結果 31
5.1.1導電率量測 31
5.1.2導熱率量測 36
5.1.3塞貝克係數量測 39
5.2結果分析與討論 40
5.2.1熱電優值 40
5.2.2基板平整度討論 41
5.2.3冷卻功率討論 44
第六章 結論與未來展望 48
參考文獻 49

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