在科技日新月異的時代，IC產品的功能日益強大，隨著產品的發展，為了要達到在單位面積的IC板中置入更多的電晶體因此必須常是對進行改變，尤其是半導體產業所需的線寬也隨著產品的進步必須不斷縮小。其中黃光微影製程技術便是影響線寬大小的關鍵步驟，但是，此技術依然存在著許多問題包含低解析度、生產良率、生產效率以及大的曝光面積，這些都是當今許多研究的主題。本研究所展示的曝光系統設計出不僅能解決一些當前的問題，還能展示一些新的特色，例如利用所設計的新光學系統來產生大面積的曝光區域，以及透過機構配合程式對系統進行控制。此UV光學系統可以將繪圖工具所設計出之圖案透過光罩於直徑2cm大小的圓形區域內進行曝光。此光學系統利用UV-LED陣列以及菲尼爾透鏡來做為投影光源並使用三軸步進控制器平台來實現步進曝光以及精密的焦點調整。另外利用適當的LED陣列配合擴散板以及平面透鏡可以產生均勻的曝光強度並以此克服出現於其他系統之高斯光束分布，為了證明此系統於各尺度之曝光效果，以各種不同幾何圖形包含次微米以及奈米尺度的圖案進行曝光測試。其結果將於本研究中進行總結與介紹。

In this rapid-evolving era of technology, the functions of IC products are becoming prominent. As the product evolves, changes must be made to accommodate more transistors in the IC board per unit area - particularly reducing the line width required by the semiconductor industry. One key step which affects the line width is photolithography process technology. However, this technology comes with many problems - poor resolution, process yield, production efficiency and large exposure area- all of which have been subjects of research today. This proposed UV lithographic system is designed to resolve some of the current issues while creating new features such as large exposure areas utilizing a new optical system, mechanical drive and software control system. The UV aligner system allows a circular image area with a diameter of 2cm to be exposed and imported from a regular drawing tool. The optical system utilizes a UV- LED array, flat Fresnel lens to create the projection and three axes stepping controller stage to achieve the stepping exposure and fine focus adjustment. Additionally, appropriate LED arrays, diffusers and flat lenses were utilized to create a flat uniform exposure light intensity to overcome the current Gaussian beam distribution normally seen in regular US aligner system. To demonstrate the multiscale fabrication capabilities of this approach, various geometries, submicrons and nanoscale patterns were tested. The results are reported and summarized in this study.

摘要----------i
Abstract----------ii
目錄----------iii
圖目錄----------vi
表目錄----------x
公式目錄----------xi
第一章 緒論----------1
1.1前言----------1
1.2研究動機與目的----------1
1.2.1接觸式曝光及近接式曝光----------2
1.2.2投影式曝光系統----------3
1.3解析度優化技術----------4
1.3.1鄰近效應改善----------4
2.3.2駐波效應改善----------6
1.4章節說明----------7
第二章 原理與文獻探討----------8
2.1 微影技術----------8
2.1.1 解析度與焦深----------8
2.2 微影製程----------10
2.2.1晶圓清洗製程----------11
2.2.2光阻塗布----------11
2.2.3軟烤----------13
2.2.4曝光----------14
2.2.5曝後烤----------14
2.2.6顯影----------15
2.2.7硬烤----------15
第三章 實驗設計與研究方法----------16
3.1 投影式曝光機之整體架構----------16
3.2 光源與透鏡系統----------17
3.2.1 光源選用----------17
3.2.2光路設計----------19
3.3 步進系統----------23
3.4 Labview程式撰寫----------24
3.4.1程式流程及系統架構----------24
第四章 結果與討論----------27
4.1 實驗及測試流程----------27
4.1.1 實驗材料----------28
4.1.2實驗流程----------29
4.2微結構製作與探討----------31
4.2.1 簡單幾何圖形----------32
4.2.2 複雜幾何圖形----------37
4.2.3 其他圖形----------43
4.2.4數據統整與結論----------46
第五章 結論與未來展望----------49
5.1 結論----------49
5.2 未來展望----------50
參考文獻----------51
附錄----------54

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