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作者(中文):林詠虔
作者(外文):Lin, Yung-Chian
論文名稱(中文):具新穎壓力計之CMOS-MEMS 單晶整合環境感測中樞
論文名稱(外文):CMOS-MEMS monolithic integration for environmental sensing hub with pressure sensor structure design
指導教授(中文):方維倫
指導教授(外文):Fang, Wei-leun
口試委員(中文):李昇憲
蘇旺申
口試委員(外文):Li, Sheng-Shian
Su, Wang-Shen
學位類別:碩士
校院名稱:國立清華大學
系所名稱:奈米工程與微系統研究所
學號:107035501
出版年(民國):109
畢業學年度:108
語文別:中文
論文頁數:104
中文關鍵詞:環境感測器單晶整合垂直整合壓力感測器濕度感測器電阻式溫度感測器二極體式溫度感測器聚酰亞氨肋狀結構
外文關鍵詞:CMOS-MEMSenvironmental sensing hubmonolithic/vertical integrationcapacitive pressure sensorcapacitive humidity sensorresistive temperature sensordiode temperature sensorpolyimideparylene-Ccorrugated structure
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本研究設計與開發一環境感測晶片,並透過TSMC所提供之 CMOS 0.18µm 1P6M 平台和相關後製程實現此晶片。此晶片包含壓力、濕度和溫度共三種感測單元。其主要目標為設計三種感測元件可成功運作之前提下互相兼容之製程流程和結構設計。此外,本研究將以壓力感測器為出發點,將透過對壓力感測元件進行肋狀結構之設計降低CMOS多膜層堆疊之薄膜殘餘應力影響以提升壓力感測器之靈敏度。在元件之設計考量中,由於壓力感測元件和溫度感測元件所需之金屬層較少,在本研究中將兩者利用CMOS多層金屬之特點進行垂直整合達到較好之空間利用。壓力感測元件利用Parylene-C高分子沉積封腔製程完成絕對型壓力感測器之製作使環境感測晶片僅需單面製程。元件經過先前設計之流程和結構後對各自感測元件之性能進行量測後皆有成功運作,證實了本研究提出之利用CMOS平台進行單晶整合之設計的可行性。此外,本研究亦初步成功驗證垂直整合三種感測元件可行性,可以藉此縮減使用面積提升多膜層堆疊使用效率。
This research presents a monolithic integration of pressure, humidity, and temperature sensing units to form an environmental sensing hub. The proposed device is realized by TSMC 0.18µm 1P6M CMOS platform and in-house post-CMOS processes. The main target is to design processes and structure to integrate three different sensing units without interfering each sensors’ function. Furthermore, corrugated structure is implemented for pressure sensor to reduce residual stress for better sensitivity. To fully utilize the multilayers of CMOS platform, pressure sensor is vertically integrated with temperature sensor. The absolute pressure sensor is sealed by coating parylene-C which makes whole fabrication a single side microfabrication process. Measurement results show that all three sensing units can operate successfully. Furthermore, this research proves the possibility of vertically integration of three kinds of sensor to reduce footprint and fully utilize the multilayers of CMOS platform.
摘要 I
ABSTRACT II
誌謝 III
目錄 VII
圖目錄 X
表目錄 XVII
第一章 緒論 1
1-1 前言 1
1-2 文獻回顧 3
1-2-1 壓力計感測機制 3
1-2-2 壓力計封裝機制 7
1-2-3 肋狀結構 8
1-2-4 相對濕度計感測機制 8
1-2-5 CMOS 製程過程以及分類 10
1-3 研究動機與目標 11
第二章 感測原理與設計規劃 24
2-1 TSMC CMOS製程平台 24
2-2 感測機制 25
2-2-1 電容式壓力感測器感測原理 25
2-2-2 電容式濕度感測器感測原理 27
2-2-3 電阻式和二極體式溫度感測原理 30
2-3 元件結構設計 32
2-4 模擬分析 33
2-4-1 肋狀(Corrugate)結構 34
2-4-2 形變量模擬 35
2-4-3 殘餘應力模擬 36
2-4-4 電容值模擬 36
第三章 製程規劃與結果 46
3-1 溫濕壓感測晶片結構佈局 46
3-2 CMOS 晶片後製程 47
3-3 後製程結果 49
第四章 量測結果與討論 58
4-1 壓力感測單元量測 58
4-1-1 圓形薄膜壓力計靈敏度量測 59
4-1-2 方形薄膜壓力計靈敏度量測 59
4-1-3 不同尺寸肋狀結構方形薄膜壓力計量測 60
4-1-4 溫度變化對壓力元件影響 61
4-2 濕度感測元件量測 62
4-2-1 濕度感測元件靈敏度量測 62
4-2-2 濕度感測元件之反應時間 63
4-3 溫度感測元件靈敏度量測 64
第五章 延伸設計與初步量測結果 77
5-1 電容式壓力計垂直整合環境感測器 77
5-2 壓阻式壓力計垂直整合環境感測器 79
第六章 結論與未來工作 95
6-1 研究成果和結論 95
6-2 未來工作 96
參考文獻 100
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