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作者(中文):張政峻
作者(外文):Chang, Cheng-Chun
論文名稱(中文):具快速濕度反應時間之CMOS單晶整合環境感測晶片
論文名稱(外文):Monolithic Integration of CMOS Environment Sensing Hub with Fast Humidity Response
指導教授(中文):方維倫
指導教授(外文):Fang, Wei-Leun
口試委員(中文):李昇憲
蘇旺申
口試委員(外文):Li, Sheng-Shian
Su, Wang-Shen
學位類別:碩士
校院名稱:國立清華大學
系所名稱:動力機械工程學系
學號:107033563
出版年(民國):109
畢業學年度:108
語文別:中文
論文頁數:94
中文關鍵詞:CMOS-MEMS電容式濕度感測器電容式壓力感測器二極體式溫度感測器聚酰亞氨單晶整合
外文關鍵詞:CMOS-MEMSCapacitive type humidity sensorCapacitive type pressure sensorDiode based temperature sensorDouble-side post-CMOS processesMonolithic integration
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本研究利用TSMC所提供之 0.18 μm 1P6M CMOS製程平台,將三種(溫度、濕度、壓力)感測單元製作在單一晶片上,整合出環境感測單元。此晶片主要以濕度感測元件為出發點,利用雙面CMOS後製程針對濕度感測元件的結構進行設計,主要會對反應時間進行改善,並且透過CMOS平台實現單晶整合壓力與溫度感測元件。而雙面CMOS後製程可以同時製作出濕度與壓力元件的背腔製作,且感濕材料選擇與CMOS製程相容性較高的聚酰亞氨高分子材料,而對於濕度計的背腔設計進而使水氣反應時間大幅縮短,並設計一套完善的製程流程融入溫度與壓力感測元件,整合成環境感測單元。
而元件成功製作後,將獨立量測各感測元件,從本研究量測結果可得知,利用指叉狀電極並掏空元件背腔的濕度感測器,將縮短五倍的反應時間,且感濕材料擁有良好的穩定性,而各感測器雖然會發生相互干擾的情況,我們仍可利用二極體溫度計進行溫度校正。由此研究可知單晶整合環境感測單元已成功地被實現在CMOS平台上。
This research reports a monolithically integrated Humidity/Thermometer/Pressure sensor to realize an environment sensing hub. The environment sensing hub is designed and implemented using the TSMC 0.18μm 1P6MCMOS platform and the follow-up double-side post-CMOS micromachining processes. Monolithic integration of H/T/P sensors on a single chip has small footprint with less packaging effort. Furthermore, double-side post-CMOS process can simultaneously fabricate backside cavities for H/P sensors, and removal of backside silicon by double-side post-CMOS process can enhance vapor diffusion of capacitive RH sensor. Therefore, the response time of relative-humidity (RH) sensor is fast.
After the environmental chip is realized, all of environment test will be measured separately. From the measurement result, the environment sensor has good performance in signal, even humidity sensor has near 5-fold enhancement. In addition, humidity sensing materials, PI, have the advantage of good stability. It can be seen that the environmental sensing hub has been successfully implemented on the CMOS platform.
摘要 I
Abstract II
誌謝 III
目錄 VI
圖目錄 IX
表目錄 XIII
第1章 緒論 1
1-1 前言 1
1-2 文獻回顧 6
1-2-1 相對濕度感測機制分類 7
1-2-2 電容式濕度感測材料介紹 11
1-2-3 CMOS-MEMS後製程 14
1-3 研究動機與目標 15
第2章 元件設計與分析 30
2-1 TSMC 0.18µm 1P6M CMOS 製程平台 30
2-2 電容式濕度感測原理 31
2-2-1 電容式溼度計靈敏度與初始電容 31
2-2-2 濕度計反應時間 34
2-3 電容式壓力感測原理 35
2-4 二極體式溫度感測原理 36
2-5 元件設計與模擬 37
2-5-1 元件結構設計 38
2-5-2 元件性能模擬 39
第3章 光罩布局與後製程結果 45
3-1 溫濕壓元件結構佈局 45
3-2 CMOS 晶片後製程 46
3-3 後製程結果 49
第4章 初步量測結果與討論 62
4-1 濕度感測元件性能量測 62
4-1-1 濕度計靈敏度量測 62
4-1-2 濕度計反應時間量測 64
4-1-3 空氣與感濕材料性能比較 65
4-1-4 感濕材料選擇性量測 66
4-1-5 感濕材料穩定性量測 66
4-2 壓力感測元件性能量測 67
4-3 溫度感測元件量測 68
4-4 感測元件串擾量測 69
4-4-1 在壓力/溫度變化下濕度元件性能 69
4-4-2 在濕度/溫度變化下壓力元件性能 70
4-4-3 在濕度/壓力變化下溫度元件性能 71
第5章 結論與未來工作 87
5-1 結論 87
5-2 未來工作 88
參考文獻 92
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