因應各種可攜式電子產品的出現，人們對顯示器之顯示品質的要求越來越高，隨著顯示器被應用在智慧手錶、智慧型手機等等螢幕較小的產品上，顯示器的功耗問題也漸漸被人們重視，因此，各大廠商開始爭相投入微型發光二極體Micro LED(Micro Light-Emitting Diode)的研發，相較於傳統的薄膜電晶體液晶顯示器TFT-LCD(Thin Film Transistor Liquid Crystal Display)與現今廣泛使用的有機發光二極體OLED(Organic Light-Emitting Diode)，Micro LED所消耗的功耗更低，且壽命更長，反應時間也更快，且繼承了OLED自體發光的特性，不需要設置額外背光源即可發光。
但在製造上，需要考慮到巨量轉移(Mass Transfer)時的成本以及良率問題，使得現今Micro LED無法成功商品化，並且現今較廣泛使用在巨量轉移的靜電式吸取頭會因為轉移面積的微縮導致靜電力下降，本研究提出利用CMOS-MEMS製程平台小線寬以及多膜層堆疊的優勢，設計具選擇性吸取功能之靜電式轉移頭，並整合壓阻式力量感測器，感測轉移時施加在Micro LED晶粒上的力，以此避免晶粒受損，使轉移的良率提高，並且透過批量轉移降低製作Micro LED顯示基板之成本。

Along with the development of the portable electronic device, in addition to minimize the size of monitors, the problem of power consumption also need to be regarded. Therefore, people start to develop the technology of Micro Light-Emitting Diode(Micro LED). Compared to Thin Film Transistor Liquid Crystal Display(TFT-LCD) and Organic Light-Emitting Diode(OLED), Micro LED has the advantages of low power consumption and long life time. Also, it has better response time. With the advantage of self-emitting, it does not need back light source on the monitors.
But when we fabricate monitors which use Micro LED technology, we have to consider the problems of cost and yield rate which caused by mass transfer. Because of these problems, Micro LED cannot be commercialized successfully. Therefore, developing the proper transfer technology becomes the most important goal.
This research demonstrates the electrostatic transfer head using TSMC 0.18μm 1P6M CMOS process. With the advantage of small line width, the electrostatic transfer head which use CMOS technology can generate higher electrostatic force. Also, we can design the chip which integrates electrostatic transfer head with force sensor by using CMOS technology. Therefore, the function of chip will become more perfect.

摘要 I
Abstract II
致謝 III
目錄 VI
圖目錄 VIII
表目錄 XIV
第一章 緒論 1
1-1 研究動機 1
1-2 文獻回顧 4
1-2-1轉移過程 4
1-2-2 轉移機制 5
1-2-3 靜電吸盤與轉移頭 10
1-2-4 力量感測機制 12
1-2-5 感測器之整合 14
1-3 研究動機 15
第二章 元件設計與規劃 30
2-1 轉移流程 30
2-2 設計概念 32
2-3 靜電力原理 34
2-4 壓阻式力量量測 35
2-5 電場與靜電力之模擬 39
2-6 CMOS元件設計 41
第三章 製程規劃與結果 57
3-1 製程規劃 57
3-2 製程結果 59
第四章 量測結果與討論 79
4-1 晶粒取放之量測架設 79
4-2 單一晶粒取放量測 80
4-3 不同尺寸之矽晶粒取放量測 81
4-4 小電極圖形之量測 83
4-5 整合壓阻式力量感測器之轉移頭元件量測 84
第五章 結論與未來工作 97
5-1 純電極元件之量測 97
5-2 整合元件之量測 98
5-3 未來工作 98
參考文獻 104

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