銅銦鎵硒薄膜太陽能電池已有數十年的發展，在眾多吸收層製備的製程中，一階段濺鍍製程以其在大面積製程的均勻性及無需硒化等優點，在近年有持續的研究與突破。在使效率進一步提升的諸多方法中，硫化製程針對前端緩衝層/吸收層介面的改質與能帶工程極具發展潛力，已被許多文獻探討，而在一階段濺鍍製程中則少有研究，本實驗以一階段濺鍍製程為基礎，進一步提供一種無毒氣氛的硫化途徑，方法為利用將單一四元靶材與硫化銦靶材於吸收層最後階段進行共濺鍍，以調控功率及時間的方式探討其效應，並以各種分析了解表面CIGSSe生成之材料特性。在硫化鈍化缺陷與介面並提升表面能隙的效應下，使效率成功由12.5%提升至13.8%，然而於分析中發現之介面分相若能改善，將有機會使效率進一步提升。

The research of Cu(In, Ga)Se¬2 (CIGSe) thin film solar cells have been proposed for decades. Among the process of absorber fabrication, CIGSe prepared by one-step sputtering process without post-selenization has been demonstrated to be a way to avoid toxic H2Se and with advantage of large-area uniformity. To achieve higher efficiency, sulfurization is known as a promising method to modify the interface of CdS/CIGSe. In this work, an alternative way of surface sulfurization without using H2S by co-sputtering the quaternary CIGSe target with In2S3 target in the last stage has been studied through the influence of co-sputtering time and power. The formation of Cu(In, Ga)(S,Se) (CIGSS) on the surface was observed and well-studied with various analysis. Solar cells with improved conversion efficiency from 12.5% to 13.8% can be obtained without toxic gas atmosphere. The improvement comes from the passivation of the interface and enlargement of surface bandgap. Further understanding of the phase separation can be a potential way to acheive better performance.

圖目錄 6
表目錄 9
第一章 緒論 10
1.1研究動機 10
1.2銅銦鎵硒(CIGSe)太陽能電池 10
第二章 文獻回顧 12
2.1太陽能元件原理 12
2.2電壓-電流特性 13
2.2.1短路電流(short circuit current, JSC) 13
2.2.2開路電壓(open circuit voltage, VOC) 14
2.2.3填充因子(fill factor, FF) 14
2.2.4寄生電阻(parasitic resistance) 15
2.2.5光電轉換效率(efficiency) 15
2.2.6量子轉換效率(quantum efficiency) 15
2.3銅銦鎵硒太陽能元件 16
2.3.1元件結構介紹 16
2.3.2基板 17
2.3.3背電極 17
2.3.4吸收層 19
2.3.5緩衝層 21
2.3.6窗口層 22
2.4製程發展 22
2.4.1共蒸鍍製程 22
2.4.2連續製程(硒化/硒硫化) 23
2.4.3一階段濺鍍製程(one step process) 24
2.6能帶與表面工程 29
2.6.1鎵梯度(Ga grading) 29
2.6.2硫化(Sulfur grading) 31
2.6.3表面反轉(type inversion) 36
2.7 鹼金屬後處理 (Alkali element post-deposition Treatment, PDT) 39
第三章 實驗方法與分析技術 41
3.1 主要實驗設備、試片製備與實驗設計 41
3.1.1 主要實驗設備 41
Solar 0 system 41
Apollo system 41
Herli system 41
3.1.2 試片製備與實驗設計 41
基板 41
背電極 41
吸收層 41
緩衝層 42
窗口層 42
上電極 42
3.2 分析儀器及原理 42
半導體分析系統 42
外部量子效率量測儀 (External Quantum Efficiency, EQE) 42
拉曼光譜儀 (Raman Spectroscopy) 42
光致螢光及時間解析光致螢光 (Photoluminescence & Time-resolved Photoluminescence, PL & TRPL) 43
X射線螢光光譜儀 (X-ray Fluorescence Spectrometer, XRF) 43
化學分析電子能譜儀 (X-ray Photoelectron Spectroscopy, XPS) 43
X光繞射儀 (X-ray Diffractometer, XRD) 43
冷場發射掃描式電子顯微鏡 (Scanning Electron Microscope, SEM) 44
第四章 結果與討論 45
第一部分 共濺鍍功率之影響 45
4.1.1材料分析 45
表面形貌 45
XPS縱深分析 46
拉曼光譜分析 48
低掠角XRD分析 (Grazing Incidence X-ray Diffraction, GIXRD) 50
材料分析總結 51
元件表現 51
第二部分 共濺鍍時間之影響 54
4.2 材料分析 55
表面形貌 55
XPS縱深分析 56
拉曼光譜分析 57
低掠角XRD分析 (GIXRD) 57
材料分析總結 58
元件表現 59
第五章 結論 62
參考文獻 63

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