近年來，二維材料具有豐富物理特性，透過異質整合能實現電子結構及特性的調控，發展新穎應用及光電元件，獲得國際高度關注。其中，過渡金屬硫族化合物(TMDs)與無機鹵素鈣鈦礦(IHPs)的異質結構，具有絕佳的互補特性，TMDs具有特殊的能帶結構、自旋軌域耦合等豐富的物理特性，但受限於原子層的厚度而造成有限的光學吸收與放光效率；相較之下，IHPs具有高光吸收性、長載子擴散距離、高光致螢光量子產率等優點，非常適合和TMDs結合以提升二維材料的光學特性。然而，TMDs/IHPs異質結構，具有各自材料製程的問題與整合的難度，因此，其能量與電荷之轉移行為及相關研究，較少被深入探討。
本研究研究TMDs與IHPs的合成製程及相異材料的異質整合，探討單一材料及其異質結構的能量傳遞與放光特性。首先，利用化學氣相沉積法分別合成單層之二硒化鎢與單晶之無機鹵素鈣鈦礦，接著利用乾式轉移法實現原子層二硒化鎢之異質堆疊，成功與CsPbIBr2形成具有TypeⅠ異質接合之能帶結構。透過光致螢光光譜量測，觀察二硒化鎢於CsPbIBr2上之光致螢光強度增強14.6倍，同時伴隨CsPbIBr2放光減弱，呈現異質結構中的能量及電荷轉移現象。透過時間解析之光致螢光光譜量測，觀察異質結構中CsPbIBr2之載子壽命，由τ = 3.77 ns縮短至τ = 0.42 ns，顯示此異質結構存在有效的能量轉移，並顯著提升二維材料的放光特性，對於二維材料之後續研究及相關發光元件之應用，具有高度潛力並值得深入探討其機制及相關基礎研究。

In recent years, two-dimensional materials have rich physical properties, which can realize the manipulation of two-dimensional electronic structure and properties through heterogeneous integration, and successfully develop novel applications and optoelectronic devices, which have attracted international attention. Among them, the heterostructures of transition metal dichalcogenides (TMDs) and inorganic halide perovskites (IHPs) have excellent complementary characteristics. TMDs have an unique band structure, spin-orbital coupling and other rich physical properties, but limited by the thickness of the atomic layer, resulting in limited optical absorption and emission efficiency. In contrast, IHPs have the advantages of high light absorption, long carrier diffusion length, and high photoluminescence quantum yield. They are very suitable for combining with TMDs to improve the optical properties of two-dimensional materials. However, TMDs/IHPs heterostructures have their own material process problems and integration difficulties. Therefore, the research on the behavior of energy and charge transfer is rarely discussed and proposed.
In this study, energy transfer and emission properties of heterostructure were studied through synthesis and heterogeneous integration of TMDs and IHPs. We first synthesized tungsten diselenide (WSe2) and IHPs respectively by chemical vapor deposition method, and then the transfer method was used to realize the heterogeneous stacking of atomic layer tungsten diselenide, and successfully formed a band structure with Type I heterojunction with CsPbIBr2. Through photoluminescence measurement, it was observed that the photoluminescence intensity of tungsten diselenide on CsPbIBr2 increased by 14.6 times, and the light emission of CsPbIBr2 decreased, showing the phenomenon of energy and charge transfer in the heterostructure. Through time-resolved photoluminescence spectroscopy, it was observed that the carrier lifetime of CsPbIBr2 in the heterostructure was shortened from τ = 3.77 ns to τ = 0.42 ns, which shows that the heterostructure has effective energy transfer and significantly improves the emission properties of two-dimensional material. The above-mentioned follow-up researches on two-dimensional materials and the application of related light-emitting devices have high potential and are worthy of in-depth exploration of their mechanism and related basic research.

摘要 I
Abstract III
目錄 1
圖目錄 4
表目錄 7
第一章 緒論 8
第二章 文獻回顧 10
2-1 過渡金屬硫族化合物 10
2-1-1 過渡金屬硫族化合物之基本介紹 10
2-1-1-1 簡介 10
2-1-1-2 化學式與晶體結構 11
2-1-1-3 電子能帶結構 12
2-1-1-4 能谷電子學 12
2-1-1-5 電子傳輸特性 13
2-1-1-6 光學特性 14
2-1-2 過渡金屬硫族化合物的製備方法 15
2-1-2-1 機械剝離法 15
2-1-2-2 化學氣相傳輸法 16
2-1-2-3 化學氣相沉積法 17
2-1-3 化學氣相沉積法合成過渡金屬硫族化合物的重要參數 18
2-1-3-1 前驅物與反應溫度 18
2-1-3-2 氣流與還原氣氛 19
2-1-3-3 促進劑的添加 20
2-1-4 過渡金屬硫族化合物之轉移方法 21
2-1-4-1 濕式轉移 21
2-1-4-2 乾式轉移 22
2-2 無機鹵素鈣鈦礦 23
2-2-1 鹵素鈣鈦礦之基本介紹 23
2-2-1-1 簡介 23
2-2-1-2 化學式與晶體結構 24
2-2-1-3 容忍因子 25
2-2-1-4 光學特性 25
2-2-2 無機鹵素鈣鈦礦的製備方法 27
2-2-2-1 熱注射法 27
2-2-2-2 常溫過飽和再結晶法 27
2-2-2-3 固相法 28
2-2-2-4 化學氣相沉積法 28
2-3 異質結構 30
2-3-1 異質結構之介紹 30
2-3-2 異質結構之合成方法 30
2-3-2-1 旋轉塗佈法 30
2-3-2-2 轉移法 31
2-3-3 異質結構之能帶排列 31
2-3-4 混合維度之異質結構 32
2-3-4-1 二維/零維異質結構 32
2-3-4-2 二維/一維異質結構 33
2-3-4-3 二維/二維異質結構 33
2-3-4-4 二維/三維異質結構 34
第三章 實驗方法 45
3-1 實驗大綱 45
3-2 實驗系統 46
3-2-1 試片前處理 46
3-2-2 實驗步驟 46
3-2-2-1 合成二硒化鎢之實驗步驟 46
3-2-2-2 合成無機鹵素鈣鈦礦之實驗步驟 48
3-3 材料分析與量測 49
3-3-1 光學顯微鏡 49
3-3-2 拉曼光譜分析 49
3-3-3 光致螢光光譜分析 50
3-3-4 時間解析光致螢光光譜分析 51
3-3-5 掃描式電子顯微鏡 51
3-3-6 X射線能量色散光譜儀 52
3-3-7 原子力顯微鏡 52
第四章 材料與異質結構的合成與分析 57
4-1 二硒化鎢的合成與分析 57
4-1-1 製程參數對二硒化鎢生長行為的影響 57
4-1-1-1 氯化鉀促進劑之加入 57
4-1-1-2 製程溫度 59
4-1-1-3 還原氣氛(氫氣比例) 60
4-1-1-4 硒進入系統時機 61
4-1-1-5 持溫時間 61
4-1-2 二硒化鎢之光學檢測 62
4-1-3 二硒化鎢之操控 62
4-1-3-1 轉移方法與步驟 63
4-1-3-2 轉移前後之材料品質 63
4-2 無機鹵素鈣鈦礦的合成與分析 71
4-2-1 無機鹵素鈣鈦礦之反應 71
4-2-2 製程參數對無機鹵素鈣鈦礦生長行為的影響 72
4-2-2-1 壓力 72
4-2-2-2 溫度 72
4-2-2-3 前驅物比例 73
4-2-3 無機鹵素鈣鈦礦之化學成分分析與光學檢測 74
4-2-4 CsPbIBr2之操控 75
4-2-4-1 轉移方法與步驟 75
4-2-4-2 轉移前後之情況 75
4-3 異質結構之整合與光學分析 79
4-3-1 異質結構之能帶排列 79
4-3-2 異質結構之整合 80
4-3-3 異質結構之光學分析 81
第五章 結論 88
參考文獻 89

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