離子佈植是重要的半導體製程。佈植後離子在半導體中的分佈‚是半導體元件物理的重要課題。要量測離子在材料中的分佈‚最常使用的是二次離子質譜儀(SIMS)。因為是直接量測準確率高‚但其主要缺點就是會破壞樣品表面。
在本論文中‚我們探討利用兆赫波時域量測技術(THz-TDS)‚分析半導體中離子分佈的可行性‚並與蒙地卡羅模擬和二次離子質譜儀量測結果做比較。樣品是矽離子佈植進砷化鎵‚部分樣品經快速熱退火(RTA)處理。在已知矽離子佈植層分佈類似高斯或梯形分佈‚且分布於表面下約800nm內‚及離子佈植層折射係數(n) ~20的條件下‚我們顯示此方法的可行性。

Ion implantation is an important semiconductor manufacturing process determination of the implanted ion distribution inside the substrate is an important topic in semiconductor physics and technology. To measure the distribution of ions inside material, secondary ion mass spectroscopy(SIMS) was widely used since it is a direct measurement and has high accuracy. However, it will damage the sample surface.
In this thesis, we discuss the possibility of using Terahertz time domain spectroscopy(THz-TDS), to reconstruct distribution of ion implanted ions inside semiconductor, and compare the outcomes with Monte-Carlo simulation and SIMS data. The samples studied are Silicon ion- implanted Gallium Arsenide(GaAs), some of the samples have rapid thermal annealing(RTA) after implantation. We assume the distribution of Si ion implanted layers have been further proceeded by Gaussian or Trapezoid distribution, and Si ions are distributed within 800nm below the surface of substrate. The real refractive index(n) of Si- implanted layer is further assumed to be~20.This way, we showed that reconstruction of the ion implantation profile by THz-TDS is feasible.

Table of Content
致謝 III
List of figure VII
List of Table XII
1 Introduction - 14 -
1-1 Ion implantation technology - 14 -
1-2 Technology to determine depth profile of dopants - 16 -
1-2-1 Destructive approaches - 16 -
1-2-2 Non-Destructive approaches - 17 -
1-3 Theoretical and Simulation studies of ion implantation - 20 -
1-3-1 Amorphous substrate - 20 -
1-3-2 Crystalline substrate - 22 -
1-4 Application of THz-TDS to depth profiling - 23 -
1-4-1 THz science and technology - 23 -
1-4-2 THz spectroscopy for material characterization - 25 -
1-4-3 Previous works on depth resolution of THz-TDS - 26 -
1-5 Motivation and objectives - 27 -
1-6 Organization of the thesis - 28 -
2 Theoretical formulism of ion implantation and Terahertz - 29 -
2-1 Simulation of ion implanted GaAs - 29 -
2-1-1 Binary collision approximation - 30 -
2-1-2 Ion implantation stopping model - 33 -
2-1-3 Diffusion model - 42 -
2-2 Terahertz time domain spectroscopy(THz-TDS) based on photoconductive antenna - 45 -
2-2-1 Generation of Terahertz pulses from biased photoconductive antenna - 45 -
2-2-2 Terahertz measurement with photoconductive antenna - 48 -
2-3 Optical and electrical characterization by THz-TDS - 50 -
2-3-1 Maxwell’s equation - 51 -
2-3-2 Extraction of material parameter in bulk samples - 60 -
2-3-3 Extraction of material parameter in thin films - 62 -
2-3-4 Thickness correction - 66 -
2-3-5 Complex reflection index - 68 -
2-3-6 Complex dielectric function - 70 -
2-3-7 Drude free-electron model - 72 -
2-3-8 Multilayer model - 76 -
3 Experimental detail - 83 -
3-1 Sample preparation - 83 -
3-1-1 Si ion implantation - 83 -
3-1-2 Rapid thermal anneal (RTA) - 85 -
3-2 Characterization method - 86 -
3-2-1 Secondary ion mass spectroscopy(SIMS) - 86 -
3-2-2 THz-TDS based on antenna - 87 -
3-2-3 Atomic force microscopy(AFM) measurement - 89 -
4 Si implanted GaAs implant only - 92 -
4-1 Distribution of Si ion into SI-GaAs Substrate-SIMS and simulation result - 92 -
4-2 Refractive index profile for Si ion into SI-GaAs Substrate - 95 -
4-2-1 Gaussian profile - 95 -
4-2-2 trapezoid profile - 97 -
4-3 THz-TDS reconstruction result - 99 -
4-3-1 Gaussian profile - 99 -
4-3-2 Trapezoid profile - 104 -
5 Distribution of Si ion into SI-GaAs substrate -Implant +RTA - 109 -
5-1 Distribution of Si ion into SI-GaAs Substrate-SIMS and simulation result - 109 -
5-2 Refractive index profile for Si ion into SI-GaAs Substrate - 119 -
5-2-1 Gaussian profile - 119 -
5-2-2 Trapezoid profile - 124 -
5-3 Ion concentration profile at fixed frequency - 129 -
5-3-1 Gaussian profile - 129 -
5-3-2 Trapezoid profile - 140 -
6 Conclusions and future works - 150 -
6-1 Conclusions - 150 -
6-2 Future works - 153 -
Reference - 154 -

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