近年來，在通信中使用可見光和近紅外波長的集成光子器件的需求已大大增加。光電探測器是系統中的關鍵設備，引起了廣泛的關注。增強其性能的所有方法之一是將低損耗Si3N4波導與Si檢測器集成在一起，從而顯著提高了響應特性。在這項研究中，我們專注於在絕緣體上矽（SOI）平台上工作於980 nm波長的Si p-i-n探測器結合Si3N4波導的開發。該設備由軟件設計和仿真，最終由TSRI製造。我們指出在15 V反向偏置下該器件的實測器件響應度為0.27 A.W ^（-1）。實驗結果總結並表明了本徵區和探測器長度的變化對光電流和響應度的影響。本文還對一些捏造的問題和解釋進行了說明

In recent years, the demand for the usage of integrated photonic devices at visible and near IR wavelengths in communication has significantly increased. The photodetector is a crucial device in the system and has attracted much attention. One of all approach for an enhancement of its performance is an integration of a low loss Si3N4 waveguide with Si detector, which improves considerably the responsivity characteristic. In this research, we concentrate on the development of a Si p-i-n detector combined Si3N4 waveguide on a silicon-on-insulator (SOI) platform, which is operated at a wavelength of 980 nm. The device was designed and simulated by software, eventually, fabricated in TSRI. We indicate a measured device responsivity of 0.27 A.W^(-1) at 15 V reverse bias for the device. The change of intrinsic region and detector length effect on photocurrent and responsivity, which is summarized and shows by experimental result. Some fabricated issues and the explanation also are demonstrated in this thesis.

Abstract i
ACKNOWLEDGEMENT iii
TABLE OF CONTENTS iv
List of Figures vi
List of Tables viii
Chapter 1: Introduction 1
1.1. Background 1
1.2. Objectives 3
1.3. Thesis organization 4
Chapter 2: Principle and structure design 5
2.1. LiDAR technology 5
2.2. Introduction to PIN lateral structure 6
2.2.1. Light absorption mechanism 7
2.2.2. Lateral p-i-n photodetector 8
2.2.3. Characteristic and photodetector parameters 12
2.3. The application of silicon and silicon nitride materials to infrared optical components 15
2.3.1. The passive components 16
2.3.2 The active component 19
Chapter 3: Device Design and Simulation 21
3.1. Device Design 21
3.2. Optical simulation of the photodetector 23
3.2.1. Silicon nitride waveguide and hybrid-mode waveguide 23
3.2.2. Edge coupler 26
3.2.3. Si3N4 waveguide integrated Si photodetector 28
3.3. Electrical simulation of the photodetector 30
Chapter 4: Fabrication Process 33
4.1 Process flow 33
4.2. Image of fabricated devices 35
5.1. Coupling loss and waveguide loss of Si3N4 waveguide 38
5.2. I-V curve measurement 39
5.2.1. The dark current measurement 42
5.2.2. The photocurrent measurement and the responsivity characteristic 44
CHAPTER 6: Conclusion and Future work 51
6.1. Conclusion 51
6.2. Future work 51
Reference 53

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