在本研究第一部分中，我們藉由不同時間分布的小角度X光散射圖去探討以光還原法還原的銀奈米粒子在DNA-CTMA及PMMA複合物中的生長情形，接著將DNA-CTMA與PMMA系統的小角度X光散射圖數據分別以硬球模型與多硬球模型進行擬合，擬合的結果表示兩個系統的成長特性，包含粒子大小、均勻性以及分布都有明顯差異，而從紫外光-可見光光譜儀的吸收光譜以及穿透式電子顯微鏡的形貌分析也得到一致的結果，基於上述的實驗分析，我們描繪出個別系統的成長機制並且解釋銀奈米粒子的成核成長。
第二部分中我們以DNA-CTMA為中間層材料作簡單三明治結構的電阻式記憶體元件，並且探討不同薄膜厚度與電性分布之間的關聯性，我們接著從材料特性上著手，利用掠角小角度X光散射圖、交流阻抗分析儀與動態光散射分別分析四種不同膜厚的特性，最後再將電性圖轉成對數座標進行線性擬合，分析元件的電阻轉換機制，部分的結果顯示出膜厚與電性之間的相關並且提供了從材料物理性質上分析元件的可能性。

In the first part of this study, by time resolved small angle X-ray scattering (SAXS), we characterized the in situ formation of silver nanoparticles(AgNPs) in two polymer matrix systems, DNA-CTMA and PMMA, where AgNPs were synthesized in the presence of polymer matrix by a photoreduction process. The experimental SAXS profiles of the DNA-CTMA system and PMMA system under photo-irradiation up to one hour were fitted by the hard-sphere model and poly-hard-sphere model, respectively. The analyses revealed several different properties of AgNPs formation between these two systems, including particles size, uniformity, and distribution. The optical and morphological properties of the two systems were also studied and are in line with the SAXS measurements. Based on the characterization results, we propose possible formation growing processes and mechanisms to explain the formation of AgNPs for both systems.
In the second part of the study, we carried out measurements for DNA-CTMA resistive switching devices in order to look for possible mechanisms to explain the thickness-dependent resistive switching behaviors. The DNA devices consist of a simple DNA-CTMA layer sandwiched by two electrodes. We conducted several characterizations for devices with different thickness DNA-CTMA layer, including GI-SAXS, dielectric spectroscopy, and dynamic light scattering. The switching curves were also fitted by different models to examine the switching mechanisms. These results show some correlation with thickness-dependent electrical properties, which provide informative physical insights toward the thickness-dependent behaviors of DNA devices.

第一章 緒論 p.1
1.1 前言 p.1
1.2 DNA介紹及應用 p.1
1.3 奈米材料簡介與應用 p.3
1.4 小角度X光散射簡介p.6
1.5 電阻式記憶體介紹 p.8
1.6 研究動機 p.16.

第二章 實驗方法 p.17
2.1 材料及實驗樣品製備 p.17
2.2 特性量測儀器 p.21

第三章 光還原奈米複合物成長與趨勢分析 p.25
3.1 銀奈米粒子分析 p.25
3.2 成長趨勢分析 p.30
3.3 成長趨勢討論 p.35

第四章 電阻式記憶體薄膜厚度與電性探討 p.38
4.1 不同薄膜厚度的記憶體元件特性 p.38
4.2 DNA-CTMA薄膜特性探討 p.41
4.3 電流傳導機制分析 p.45

第五章 結果與未來展望 p.49
參考文獻 p.50

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