本論文主要目的為研製一個可在1100nm~1700nm波段的光纖通訊與雷達偵測中使用的光崩潰二極體陣列。在磷化銦基板上(InP substrate)，用有機金屬化學氣相沉積系統(MOCVD)製作出砷化銦鎵/磷化銦磊晶層。單顆光崩潰二極體的直徑大小為200微米。 利用平面式結構配上直徑220微米的第一層外部護環以及兩圈寬度為5微米的護環結構能使光崩潰二極體擁有較低的暗電流以及穩定性。
在製程中，我們使用氮化矽作為擴散阻擋層以及鈍化層，分別用來定義擴散區以及降低元件的漏電流。p 型區域是透過快速熱擴散的技術，將未參雜的磷化銦覆蓋層成為p型磷化銦覆蓋層，而形成光崩潰二極體。另外，鋅原子是目前用於砷化銦鎵光檢測器中最常見的p型參雜源。
使用不同擴散深度和蝕刻深度分別被製作成元件並且分析討論，不同的擴散條件定義了不同增益層的厚度，而不同的增益層厚度對元件的影響也在論文中被探討。最後成功製作出的4x4光崩潰二極體陣列，在-5V的偏壓下有著1.34nA±2.42nA的低暗電流，而在95%崩潰電壓(-30.1V±1.51)下為959nA±2.07uA的暗電流，並且擁有增益值為 17.12±10.1。

In this thesis, we are going to fabricate an avalanche photodiode for the lidar application, the operating wavelength is between 1100nm~1700nm which determined by the InP/InGaAs materials. On top of the InP substrate growns a thin InP/InGaAs epitaxy layer by MOCVD. The diameter of the avalanche photodiode device is 200m, the device is designed with GR and FGR structure for preventing edge breakdown and lower the dark current.
In our process, to define the p-type area and suppressing dark current, SiNx film is chosen for the diffusion hard mask and passivation layer. The p-type region is formed by diffusing zinc dopant into the InP cap layer using rapid thermal diffusion process (RTD), zinc is the most used p-type dopant for InP/InGaAs photodetector nowadays.
The different multiplication thickness for the device performance has been discussed in this thesis. Finally, an APD array device Punchthrough voltages are at 9.9±11.08V, and the breakdown voltages are at 31.7±1.61V. Dark current at low bias condition (-5V) are 1.34nA±2.42nA and dark current at 95% breakdown Voltage (-30.1V±1.51) are 959nA±2.07uA,gain are17.12±10.1.

CONTENT
摘要 ii
ABSTRACT iv
誌謝 vi
CONTENT vii
LIST OF FIGURES ix
LIST OF TABLES xii
Chapter1.Introduction 1
1.1 Introduction to APD device 1
1.2 Motivation 4
Chapter2 The basic theory of Avalanche Photodiode 8
2.1 The basic theory of Avanlanche photodiode 8
2.2 InGaAs avalanche photodiode material 14
2.3 Junction Capacitance 18
2.4 Dark Current Mechanism 20
2.5 Responsivity and Quantum Efficiency 24
2.6 Multiplication gain 24
2.7 Characterization instruments 26
2.7.1 I-V Characteristic Measurement System 26
2.7.2 C-V Characteristic Measurement System 27
Chapter 3. Experimental procedur 29
3.1 Device structure 29
3.2 Mask design concept 31
3.3 Dielectric Deposition and Etching 36
3.4 Thermal Drive-in Process 37
3.4.1 Process Steps and Experimental Details of APD device 39
Chapter 4 Result and Discussion 49
4.1 Two different recess etching method 49
4.2 4x4 APD array characteristic 59
Chapter 5 Conclusions 66
Reference 68

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