近年隨著5G網路協定的興起，對於數據傳輸的需求大幅增加，無論是所需的頻寬、傳輸速率、延遲皆需要有更好的表現，光通訊系統相較於電通訊系統有較低的能量耗損，並有更佳的傳輸速率，利用矽光子技術製作高速積體化光傳收器近年來受到相當大的矚目，因此本研究的重點為開發高速行波矽光調變器及矽光偵測器，作為未來應用在矽光子光載射頻轉換晶片模組做準備。
首先我們利用等效電路模型設計元件的相關參數，調變器參考之前的元件設計；光偵測器則在現有的模型下額外考慮飄移電流及RC時間參數所帶來的影響，最後比較模型與實際製作完成元件的差異。
最後量測1mm非對稱式側向佈值馬赫曾德爾矽光調變器的3dB頻寬為23GHz，模擬結果為32GHz；2mm行波光偵測器量測得頻寬 31GHz，模擬結果為37.5GHz，量測與模擬結果相近，而同時由於行波光偵測器操作於接近崩潰電壓附近，同時也觀測到雪崩式光電流的產生，其主要影響較低頻率的頻率響應曲線。矽光調變器則成功觀測到32Gb/s眼圖。

With the advent of 5G mobile network in recent years, the demand for high-speed data transmission has increased significantly. Optical communication systems in general have better performance than electrical communication systems in terms of wide transmission bandwidth, low latency and low energy consumption. Recently high-speed integrated optical transceivers implemented via silicon photonics technology have received considerable attention. In this research work, we focus on development of high-speed traveling wave silicon optical modulators and silicon photodetectors which are potentially used for mmWave Radio-over-Fiber transceiver modules.
First, we use the equivalent circuit model to design the relevant parameters of the components, where the modulator refers to the previous design developed in our lab. For the traveling wave photodetector, we consider the dynamics of drift carriers in accordance with the existing model and compares the difference. Then we fabricate the devices in TSRI. The measured 3dB bandwidth of the 1-mm asymmetric Mach-Zehnder silicon optical modulator was 23GHz, lower than the simulation result 32GHz. On the other hand, the 3dB bandwidth of the 2-mm traveling wave photodetector was measured to be 31GHz, generally in good agreement with the simulation result 37.5GHz. At the same time, because the traveling wave photodetector operates near the breakdown voltage, we also observed avalanche gain of photocurrent. The silicon optical modulator successfully observed the 32Gb / s eye diagram.

Abstract I
摘要 II
致謝 III
目錄 IV
圖目錄 VI
表目錄 XI
第一章 緒論 1
1.1 前言 1
1.2 研究動機與目的 2
1.3 論文架構 4
第二章 矽光調變器及行波光偵測器之原理與設計 5
2.1 被動元件之原理與設計 5
2.1.1 矽光波導 5
2.1.2 光柵耦合器 11
2.1.3 多模干涉耦合器 13
2.1.4 終端器 21
2.2 主動元件之原理與設計 22
2.2.1 矽光調變器 22
2.2.2 行波光偵測器(Traveling Wave Photodetector) 31
2.3 傳輸電極之原理 36
第三章 矽光調變器及行波光偵測器之等效電路模型分析 44
3.1 主動元件之等效電路模型分析 44
3.1.1 矽光調變器之等效電路模型 44
3.1.2 行波光偵測器之等效電路模型 49
3.2 矽光調變器之特性模擬與分析 54
3.3 行波光偵測器之特性模擬與分析 57
第四章 元件製作流程 61
4.1元件製作流程圖 61
4.2元件製作細節 61
第五章 量測系統與分析 69
5.1量測系統介紹 69
第六章 結果與討論 84
6.1結論 84
6.2未來展望 85
參考文獻 87

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