本論文主要於研究以不同披覆層之射頻高電子遷移率電晶體之元件製作及分析。在本研究中，氮化矽、二氧化矽及不同製程參數的氮氧化矽披覆層分別被製作成氮化鋁鎵/氮化鎵金半高電子遷移率電晶體並做在高阻值矽基板上。
在比較本研究的所有元件後，以氨氣與氧化二氮比例1：2製作而成的氮氧化矽披覆層當作氮化鋁鎵/氮化鎵金半高電子遷移率電晶體具有最佳的特性，在閘極線寬為2微米，閘極總長160微米的元件之汲極飽和電流密度為726mA/mm，最大轉導值為128 mS/mm。在小訊號表現上，截止頻率和最大震盪頻率分別為2.9和10.4 GHz

This thesis focuses on studying a silicon oxynitride (SiNO) applied to AlGaN/GaN high-electron-mobility-transistors (HEMTs) as the passivation layer for high frequency and RF power applications. High-resistivity silicon substrates were used in this study and were used to fabricate AlGaN/GaN MSHEMTs.
Compared with all types RF-MSHEMTs in this study. Excellent improvements are achieved for 2×80 μm AlGaN/GaN MSHEMT on high resistivity silicon substrate with SiNO passivation (NH3:N2O=1:2) has a drain saturation current density (JDS,max) of 726 mA/mm and maximum transconductance (Gm,max) of 128 mS/mm. The fT and fMAX were 2.9 and 10.4 GHz, respectively.

摘 要 I
Abstract II
誌 謝 III
Contents IV
List of Figures V
List of Tables VII
Chapter 1 Introduction 1
1-1 Gallium Nitride (GaN) 1
1-2 High Electron Mobility Transistor (HEMT) 1
1-3 Motivation 4
1-4 Passivation Layer 5
1-5 Thesis Organization 6
Chapter 2 Fundamental Principles of Measurement 7
2-1 Transmission Line Measurement 7
2-2 Small-Signal Performance 14
2-2-1 Scattering parameters (S-parameters) 9
2-2-2 RF Characteristics for small-signal performance 10
2-2-3 67 GHz S-parameter measurement system setup 13
2-3 Pulse I-V Measurement 14
Chapter 3 Design and Fabrication 16
3-1 Design of Experiment 16
3-2 RF-MSHEMT Process 17
3-2-1 Mask Design of RF-MSHEMT 17
3-2-2 Process Flow for RF-MSHEMT 18
Chapter 4 Results and Discussion 26
4-1 TLM characteristics 27
4-2 The AlGaN/GaN RF-MSHEMT with SiNx, SiO2 Passivation 28
4-2-1 DC characteristics 28
4-2-2 Small-Signal characteristics 32
4-3 The AlGaN/GaN RF-MSHEMT with Different SiNO Passivation 33
4-3-1 DC characteristics 34
4-3-2 Small-Signal characteristics 39
4-4 Comparison with SiNx, SiO2, and SiNO Passivation 41
4-4-1 DC characteristics 41
4-4-2 Small-Signal characteristics 46
4-5 Pulse I-V Measurement 48
Chapter 5 Conclusion 50
Reference 51

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