近年來，隨著半導體產業的演進，毫米波頻段開始被大大地發展。在毫米波頻段中，人們致力於開發車用雷達，成像系統以及指向性傳輸等應用。本論文前兩個主題為研究毫米波頻段之低雜訊放大器。
在現今4G LTE中，由於傳輸損耗以及遮蔽訊號等問題許多地下室或大商場中有一些地方會收不到訊號，這種現象在即將來臨的5G將更為嚴重。為了解決此問題，本論文的第三個研究主題為光載毫米波結合波束成形的K/Ka頻段收發機前端設計。
第一個研究主題為W頻段之低雜訊放大器設計，我們使用TSMC 90-nm CMOS製程來實現。為了有較好的整體雜訊因子以及增益，我們使用cascade架構來提升整體增益以及運用noise measure 來進行設計考量。級間設計中，我們使用dc-coupling來進行設計，並且將級間中前級的實部輸出阻抗以及後級的實部輸入阻抗設計相近，僅並聯一條傳輸線來進行虛部阻抗匹配。如此一來，級間匹配網路所帶來的損耗可以有效地減少。最後我們成功實現noise measure為3.9的低雜訊放大器。
第二個研究主題為200-GHz頻段之低雜訊放大器設計，我們使用TSMC 40-nm CMOS製程來實現。為了使各級有較大的本質增益，我們使用嵌入式技術來改變電晶體的增益狀態點，且使用cascade架構來提升整體增益。雜訊以及級間設計方面，使用了noise measure來優化整體雜訊因子以及使用dc-coupling來進行設計。最後我們成功實現增益大於30 dB的低雜訊放大器。
第三個研究主題為K/Ka頻段之光載毫米波收發機電路設計，我們使用TSMC 90-nm CMOS製程來實現。在發射機中共設計兩顆晶片，其中第一顆為低雜訊放大器加上功率放大器。低雜訊放大器主要用來接收光電二極體所產生的電訊號，後級的功率放大器則用來進行訊號的放大，再經由天線傳輸出去。第二顆晶片為低雜訊放大器、移相器、可變增益放大器以及功率放大器以應用於光載毫米波結合波束成形。在接收機中設計了一顆晶片，為低雜訊放大器加上馬赫-曾德爾干涉儀驅動電路。低雜訊放大器用來接收天線傳來的訊號，後面的馬赫-曾德爾干涉儀驅動電路則是用來放大電壓擺幅來驅動後級的馬赫-曾德爾干涉儀。

Due to the development of semiconductor industry, the applications of millimeter wave are widely explored in recent years. For example, automotive radar, imaging system and high data rate wireless communication have obvious help in these industries. In this thesis, the first and the second chapters will be focused on millimeter wave low-noise amplifiers.
In the 4G LTE, due to the transmission loss and blockage problem, specific areas in big shopping mall or basement can not receive signal. This phenomenon will be more serious in the upcoming 5G era. In order to solve these problems, the third chapter of my thesis will focus on radio-over-fiber with beam-forming K/Ka band transceiver front-ends.
In the first chapter, the TSMC 90-nm CMOS is used to design W-band low-noise amplifier. In order to enhance total power gain, the cascade topology is used. Moreover, for better noise factor, the noise measure is used as design concept. In inter-stage design, dc-coupling is used to match, and the real parts of the previous stage output impedance have been designed close with the next stage input impedance. Therefore, only required a transmission line to match imaginary parts, and the insertion loss of inter-stage matching network can be reduced effectively. Thus, the noise measure achieves 3.9 in this work.
In the second chapter, the TSMC 40-nm CMOS is used to design 200-GHz low-noise amplifier. For larger maximum available gain of a single stage common source, the embedding technique is used to adjust gain state point, and the cascade topology is used to enhance total power gain. In the design of noise and inter-stage matching network, the noise measure is used as design concept to optimize total noise factor, and the dc-coupling is used to match. Hence, the power gain is larger than 30 dB in this work.
In the third chapter, the TSMC 90-nm CMOS is used to design K/Ka band radio-over-fiber transceiver front-ends. In transmitter design, there are two works which will be presented. The first work is low-noise amplifier and power amplifier. A low-noise amplifier is used to receive electrical signal from photo-diode, and a power amplifier is designed after low-noise amplifier to amplify signal to antennas. The second work is low-noise amplifier, 4-bit phase shifter, variable gain amplifier and power amplifier for the applications of radio-over-fiber beam-forming. In receiver design, one work will be presented, and this work is low-noise amplifier and Mach-Zehnder Modulator (MZM) driver. A low-noise amplifier is used to receive signal from antenna, and a MZM driver is used to amplify voltage swing to drive MZM.

摘要 i
ABSTRACT iii
Contents v
List of Figures vii
List of Tables xiv
Chapter 1 Introduction 1
1.1. Background 1
1.2. W-band and mm-band Applications 2
1.3. Motivations of Silicon Photonics Radio-Over-Fiber Transceiver Front-End for 5G Phased Arrays 2
Chapter 2 A W-Band Low-Noise Amplifier using Noise Measure Design Concept in 90-nm CMOS 5
2.1. Fundamentals 5
2.1.1 Architecture 5
2.1.2 Noise Measure 5
2.2. Circuit Design 7
2.2.1 Core Circuit 7
2.2.2 Simulation and Measurement Results 16
2.2.3 Conclusion and Discussion 21
Chapter 3 A 200-GHz Low-Noise Amplifier using Embedding Technique in 40-nm CMOS 23
3.1. Fundamentals 23
3.1.1 Power Gain 23
3.1.2 Gain Plane 24
3.1.3 Embedding Network 29
3.2. Circuit Design 31
3.2.1 Core Circuit 31
3.2.2 Simulation and Measurement Results 37
3.2.3 Conclusion and Discussion 42
Chapter 4 Silicon Photonics Radio-Over-Fiber Transceiver Front-End for 5G Phased Arrays in 90-nm CMOS 45
4.1. Fundamentals 45
4.2. Circuit Design of Work A and Work B 46
4.2.1 LNA Design 47
4.2.2 PA Design 49
4.2.3 Simulation and Measurement Results of Work A 58
4.2.4 Simulation and Measurement Results of Work B 72
4.2.5 Conclusion and Discussion 79
4.3. Circuit Design of Work C 81
4.3.1 LNA and 4-Bit Phase Shifter (PS) Design 81
4.3.2 Low-Phase Variation VGA Design 92
4.3.3 PA Design 102
4.3.4 Simulation and Measurement Results 113
4.3.5 Conclusion and Discussion 122
Chapter 5 Conclusion and Future Work 126
Reference 128

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