由於矽為非直接能隙材料，使其天生就不利應用於光電行為上，所以本論文利用矽與石墨烯形成的接面，將元件操作在順向及逆向偏壓下，提供載子至接面處發光， 而本論文的發光機制為首次提出。
本論文將矽基板製作成重摻雜的n++及p++區，用來提供電子及電洞，將載子注入至轉移到基板上的單層石墨烯，由於石墨烯橫向傳輸的特性，所以可期待載子於此二維材料中復合。然而完整的石墨烯是沒有能隙的，所以難以發出可見光，因此，我們在石墨烯的邊界製造缺陷，讓載子在這些能態中復合以發出可見光。
在本論文元件的架構下，不論是操作在順向或是逆向偏壓，皆有觀測到發光的現象。而發光的波長主峰值於650nm附近，隨著偏壓的上升，發光的強度也隨之上升，另外有兩個峰值位於520nm及420nm附近。我們亦觀察到元件操作在不同偏壓方向時，發光位置亦不同，這是由於順向偏壓及逆向偏壓時載子流動的方向不同所導致。
而本論文的成果提供了一種可快速於矽基板上實現發光的方式，只要適當的選擇發光層的材料，例如：摻鋁氧化鋅，即可在矽基板上製作一個紫外光發光源。

Because silicon is an indirect bandgap material, it is not easy to be applied for light emission. This thesis is to take advantage of the junction formed by silicon and graphene and to operate the device at forward or reverse bias to emit visible light at the junction. The luminescence mechanism is proposed for the first time.
In this thesis, heavily doped N-type and P-type regions were formed on the silicon substrate to provide electrons and holes. Carriers were injected into a single-layer graphene which was transferred to the silicon substrate. Owing to the two-dimensional structure and the electrical transport characteristics of graphene, carrier recombination in the single-layer graphene is expected. However, graphene is known to be a zero-bandgap matreial, so it is difficult to emit visible light. Therefore, creating defects at the border region of graphene makes carriers recombine and emit light.
In this work, electroluminescence was observed no matter under reverse or forward bias. And the emission mainly peaks at the wavelength was about 650nm. When the bias was increased, the light intensity also increased. Besides, two more peaks around 420nm and 520nm were also observed. Furthermore, all the observed luminescence occurred at opposite places when the device was biased in opposite directions, suggesting that carriers move in opposite directions under opposite bias.
The results of this thesis provide a way to create light source quickly on a silicon substrate. If a light emission layer is chosen adequately (for example, aluminum doped zinc oxide), creating an UV light source on a silicon substrate is possible.

摘要.................................I
Abstract............................II
致謝...............................III
目錄................................IV
圖目錄..............................VI
表目錄............................VIII
第一章 緒論.........................1
1.1 研究背景及動機................1
1.2 論文章節架構..................2
第二章 材料介紹.....................3
2.1 石墨烯的結構和物理特性.........3
2.2 拉曼光譜分析..................6
2.2.1 拉曼散射原理..................6
2.2.2 石墨烯的拉曼光譜..............7
第三章 發光二極體原理及特性...........9
3.1 發光二極體原理................9
3.1.1 載子躍遷.....................9
3.1.2 PN與PIN接面比較..............11
3.2 蕭特基與歐姆接觸..............11
第四章 石墨烯發光元件製作............14
4.1 元件架構.....................14
4.2 元件製作與流程................15
4.2.1 晶圓雷射刻號與第零層對準標記...17
4.2.2 元件和元件之間隔離與摻雜.......18
4.2.3 金屬沉積與蝕刻................19
4.2.4 石墨烯轉移...................21
4.3 光罩列表.....................25
4.4 重要製程參數..................26
第五章 量測結果與討論................27
5.1 量測儀器介紹..................27
5.2 基本電性量測..................28
5.3 發光特性量測..................35
第六章 總結與未來展望................48
參考文獻.............................50

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