近期的文獻指出，以三元系統為主動層的太陽電池是有效提升太陽電池效率的重要方向之一，本實驗即以三元系統製備太陽電池，並且利用刮刀塗佈技術在大面積的元件上突破目前學界的紀錄，效率達7.7%，並且成功發表於國際期刊。
本實驗是以主動層材料PBDB-T:ITIC:PC71BM三元混摻，並且以氯苯(Chlorobenzene)作為溶劑，加上DIO界面活性劑，搭配正結構，以ITO為陽極，蒸鍍製程的鋁為陰極，並且以ZrOx取代傳統LiF陰極介面修飾層，相較於LiF成功將元件電性以及穩定性都提升，其大面積元件在室溫下壽命超過140天效率仍然維持原來效率80%以上，穩定性有明顯的提升。
接著將大面積不透明的成果應用於半透明大面積太陽電池，但在半透明元件的製程上發現介面層的表面型態將會嚴重影響元件電性，因此轉而利用小面積做為實驗製程上的測試。首先利用PC71BM想要將三元較為不平整的表面粗糙度填平，但發現效果並不好。接著使用一種新穎的方法，先將二元以PBDB-T:ITIC的系統置為主動層，上面上一層PC71BM，想要利用碳球對於溫度的敏感度容易擴散的效應，讓我的主動層可以變為三元系統，並且順勢降低表面粗糙度，此方法在LiF為介面層也得到不錯的結果，在製程穩定性上，以及壽命上都優於三元單層結構。雖然接著應用於本實驗室使用穩定陰極介面修飾層材料ZrOx無法得到很好的結果，但相信只要挑對介面層材料，這樣的結構應該是具有實體的可行性。接著嘗試在小面積上直接調控介面層的表面型態，透過溶液濃度的提高，可以發現濃度提高對於覆蓋率有明顯的改善，因此未來可以將濃度提高應用於大面積，因為膜面的平整度對於大面積的效率提升是最為重要的，將此結果運用於大面積應可得到不錯的結果。

Recent literature pointed out that solar cells with ternary system as the active layer are one of the important directions to effectively improve the efficiency of solar cells. This experiment is to prepare solar cells with ternary system and use blade coating technology on large-area components. Breaking through the current academic record, the efficiency is 7.7%, and it was successfully published in international journals. This experiment is based on the active layer material PBDB-T:ITIC:PC71BM ternary blending, and using Chlorobenzene as solvent, plus DIO surfactant, with positive structure, ITO as anode, evaporation process aluminum As the cathode, and replacing the traditional LiF cathode buffer layer with ZrOx, the electrical and stability of the component are improved compared with LiF. The PCE of the large-area device maintained 80% of original device at room temperature after140 days. There is a significant increase in stability.Then the opaque large-area results were applied to transparent large-area solar cells, but the surface morphology of the interface layer is found to seriously affect the electrical properties of transparent solar cell, so a small area device is used as an experimental process. First, the PC71BM was used to fill the surface roughness of the ternary, but the effect was not good. Then, I used a new method, the binary PBDB-T:ITIC system is first set as the active layer, and the upper layer PC71BM is used. I want to use the effect of the carbon sphere's sensitivity to temperature diffusion, so that my active layer can become a ternary system, and the surface roughness is also reduced by the method. This method also has good results in the cathode buffer layer LiF. Moreover, the process stability and life are better than ternary solar cell in room temperature. Although it did not obtain good results in the cathode interface modification layer material ZrOx, it is believed that such a structure should be physically feasible as long as the cathode buffer layer material is selected. Then try to directly control the surface morphology of the cathode buffer layer on a small area. Through the increase of the solution concentration, it can be found that the concentration increase has a significant improvement on the coverage rate. Therefore, the concentration increase can be applied to a large area in the future because of the flatness of the film surface is the most important thing to large area device.

摘要 i
Abstract iii
致謝 v
目錄 vii
圖目錄 x
表目錄 xii
第一章、 緒論 - 1 -
1.1前言 - 1 -
1.2太陽電池發展過程 - 2 -
1.3有機太陽電池簡介 - 3 -
1.4研究動機 - 6 -
1.4.1有機材料在太陽電池的優勢 - 6 -
1.4.2有機太陽電池高分子吸光層 - 7 -
1.4.3半透明有機太陽電池 - 8 -
1.5文獻回顧 - 9 -
1.5.1有機發光二極體 - 9 -
1.5.2大面積有機太陽電池 - 10 -
1.6論文架構 - 11 -
第二章、 實驗原理 - 12 -
2.1太陽能電池基本介紹 - 12 -
2.1.1太陽電池基本原理 - 12 -
2.1.2理想情況太陽電池等效電路分析 - 13 -
2.1.3實際太陽電池等效電路分析 - 14 -
2.1.4太陽電池各項參數介紹 - 15 -
2.1.5太陽電池操作分析 - 17 -
2.2有機太陽電池材料特性介紹 - 21 -
2.2.1共軛高分子材料特性 - 21 -
2.2.2有機半導體能帶理論 - 22 -
2.3本論文所使用材料特性 - 23 -
2.3.1太陽電池主動層材料 - 23 -
2.3.2電洞傳輸層材料 - 25 -
2.3.3陽極金屬材料 - 26 -
2.3.4陰極材料 - 26 -
2.4本實驗元件結構與能帶圖 - 29 -
第三章 實驗方法與流程 - 31 -
3.1實驗流程 - 31 -
3.2 ITO基板蝕刻 - 31 -
3.3 ITO基板前置準備與清洗 - 34 -
3.4刮刀塗佈系統 - 34 -
3.5電動傳輸層(Hole Transport Layer ,HTL) - 35 -
3.6高分子主動層上膜 - 37 -
3.7陰極介面修飾層 - 38 -
3.8蒸鍍電極 - 39 -
3.9元件封裝 - 40 -
3.10元件量測 - 41 -
第四章 實驗結果與討論 - 44 -
4.1三元主動層大面積結果討論 - 44 -
4.1.1 使用不同刮速與溶液配方達成膜厚的均勻度 - 44 -
4.1.2將所得到的最佳膜厚實際製作元件 - 46 -
4.2以PCBM為填補層彌補三元粗糙度較高的現象結果討論 - 49 -
4.3雙層結構在電性以及壽命上的結果討論 - 52 -
4.3.1雙層結構PCBM對於退火時間的結果討論 - 53 -
4.3.2退火對PCBM表面型態的改變 - 55 -
4.3.3將ZrOx穩定介面層帶入此雙層結構 - 58 -
4.3.4雙層結構與單層二元與三元的電性結果比較 - 59 -
4.4三元單層結構介面層型態控制 - 61 -
第五章 總結與未來展望 - 63 -
參考文獻 - 64 -

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