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作者(中文):陳霆恩
作者(外文):Chen, Ting-En
論文名稱(中文):具有穩定電壓機能的超高頻E類諧振直流電源轉換器
論文名稱(外文):UHF Class E DC-DC Power Converter With Voltage Regulation Using GaN and CMOS In IPD Technology
指導教授(中文):徐碩鴻
指導教授(外文):Hsu, Shuo-Hung
口試委員(中文):劉怡君
金俊德
口試委員(外文):Liu, Yi-Chun
Jin, Jun-De
學位類別:碩士
校院名稱:國立清華大學
系所名稱:電子工程研究所
學號:106061558
出版年(民國):109
畢業學年度:108
語文別:中文
論文頁數:123
中文關鍵詞:穩定電壓直流電源轉換器調整工作週期輸出電壓經由回授自動調整不同負載
外文關鍵詞:Voltage RegulationDC-DC Power Converteradjust the duty cycleThe output voltage can be regulated via feedbackdifferent loads
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近年來,利用諧振式的切換設計來縮小電源轉換器為一個重要的研究方向,而共振式的電源轉換器設計中,有個困難的問題是輸出電壓的準位會隨著負載的變動而變化,而無法達到實際使用上的要求。在本次研究中,我們提出使用回授機制調整工作週期(duty cycle)的方式,來改變電源轉換器的輸出電壓。可以使輸出電壓經由回授自動調整,達成在不同負載中有穩定的輸出電壓。
在本次研究中,共設計了兩種穩壓電源轉換器,分別為基本架構電源轉換器和E類電源轉換器,其切換頻率皆為500MHz,藉由提高功率電晶體的切換頻率,減少被動元件的晶片面積,因而提升功率密度,其總面積均小於60 mm2,面積分別約為51.52 mm2與55.44 mm2,最高轉換效率為41.22 %,量測最大輸出功率為3.12 W,功率密度為0.054 W/mm3,使用覆晶 (Flip Chip) 技術將三種異質晶片做整合。分別將CMOS回授電路、GaN功率電晶體HEMT與IPD被動元件整合在一起。
本研究的核心電路為直流電源轉換器的回授電路,此回授電路的目的是在輸出負載為50Ω-100Ω之間能夠穩定輸出電壓,當輸出負載為50Ω時,此時回授電路之輸入準位為參考電壓,且閘極驅動器輸出50%工作週期的方波,輸出負載增加時,此時輸出電壓的直流準位上升,此時比較器感應到輸入電壓的上升,讓積分器累積電壓,利用工作週期調整電路來改變閘極驅動器的工作週期,進而減少輸出電壓的直流準位至負載為50Ω的準位。在電路模擬時未加回授電路的情況下,50Ω及100Ω之間的輸出電壓差為1.65V,一旦加入了回授電路,兩者負載間的輸出電壓差降為0.2V,在實際量測的層面,由於可能的製程變異的影響及有些模擬未考慮完整的地方如元件的熱效應,最後量測結果,回授後50Ω及100Ω之間的輸出電壓差為0.97 V。
In recent years, using the resonant switching mode design is an important research direction which can reduce the size of power converter. In this design of the resonant type power converter, a difficult problem is that the output voltage level will change with the load, which can not fulfill the requirement of practical applications. In this study, we propose to adjust the duty cycle by using the feedback mechanism to change the output voltage of the power converter. The output voltage can be regulated via feedback to achieve a stable output voltage in different loads.
In this study, two kinds of regulated power converters were designed, including the basic power converter and class E power converters. The switching frequency of power converters is 500 MHz. We can reduce the passive element area by increasing the switching frequency of the power converter, and this can also increase the power density of chip. The total area is less than 60 mm2, the area is about 51.5 mm2 and 55.4 mm2, the maximum conversion efficiency is 41.22%, the measured maximum output power is 3.12 W, the power density is 0.054 W/mm3. Using flip chip technology to integrate three heterogeneous chips, we can realize the power converter with the CMOS feedback circuit, GaN power transistor HEMT and IPD passive components, respectively.
The core circuit of this research is the feedback circuit of the DC-DC power converter. The purpose of this feedback circuit is to stabilize the output voltage by the load in the range from 50Ω to 100Ω. When the output load is 50Ω, the input voltage of the feedback circuit is the reference voltage, and the gate driver outputs a 50% duty cycle square wave. When the output load increases, the DC level of the output voltage rises, and the comparator senses the input voltage at this moment. With the accumulated voltage in the integrator of capacitor, then we can change the duty cycle of the gate driver by using the duty cycle adjusting circuit. Furthermore, it can reduce the DC level of the output voltage to change the input voltage to the reference voltage. Without adding a feedback circuit during circuit simulation, the output voltage difference between the loading 50Ω and 100Ω is 1.65V. When the feedback circuit is added to the power converter, the output voltage difference of the power converter between the loading 50Ω and 100Ω drops to only 0.2V by circuit simulation. In the actual measurement, the influence of process variation and also the thermal effect of the power transistor may affect the accuracy of simulation. The final measurement results show that the output voltage difference between 50Ω and 100Ω after feedback is 0.97 V.
第1章 緒論 18
1.1 研究背景與動機 18
1.2 論文架構 19
第2章 電源轉換器 20
2.1 電源轉換 20
2.1.1 電源轉換器的概念 20
2.1.2 升壓直流轉換器的基本架構 21
2.1.3 升壓直流轉換器的原理 21
2.2 諧振式直流電源轉換器 24
2.2.1 硬式切換及軟式切換 24
2.2.2 諧振式直流-交流逆變器(Resonant Inverter) 27
2.2.3 E類諧振直流電源轉換器 27
2.3 總結 30
第3章 氮化鎵主動元件與二極體 31
3.1氮化鎵材料的特性 31
3.1.1 寬能隙材料 31
3.1.2 崩潰電壓與導通電阻 33
3.1.3 電子飽和速度 35
3.2 穩懋氮化鎵元件 36
3.2.1 穩懋氮化鎵元件之特性 36
3.2.2 功率電晶體量測結果 38
3.2.3 氮化鎵蕭特基二極體之實現 40
3.2.4 蕭特基二極體量測結果 42
3.3 總結與討論 44
第4章 被動元件的實現 45
4.1 IPD電感元件 45
4.1.1電感特性 45
4.1.2 Dense-Tapered 螺旋電感 46
4.1.3 IPD 電感設計 49
4.2 IPD電容元件 50
4.2.1 電容特性 51
4.2.2 IPD電容設計 52
4.3 總結 53
第5章 有回授電路機制之直流電源轉換器 54
5.1 直流電源轉換器之架構 54
5.1.1 設計概念 54
5.1.2 各種不同製程的整合方式 56
5.2 回授電路的概念及設計 59
5.2.1工作週期調整電路 64
5.2.2比較器 66
5.2.3積分電路 67
5.2.4直流電源轉換器之實現 68
5.3 回授電路的模擬結果 71
5.3.1 第一種回授電路 72
5.3.2 第二種回授電路 73
5.3.3 基本型升壓電源轉換器結合第一種回授方式 74
5.3.4 E類諧振升壓電源轉換器結合第一種回授方式 76
5.3.5 基本型升壓電源轉換器結合第二種回授方式 78
5.3.6 E類諧振升壓電源轉換器結合第二種回授方式 79
5.4 量測結果 80
5.4.1 基本型升壓電源轉換器結合第一種回授方式 81
5.4.2 基本型升壓電源轉換器結合第二種回授方式 94
5.4.3 E類諧振電源轉換器結合第二種回授方式 105
5.4.4 量測結果總結 115
5.5. 總結與討論 118
第6章 結論與未來展望 120
參考文獻 121
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