本研究開發出鋯鈦酸鉛(PZT)及氮化鋁(AlN)壓電共振器製程平台，我們選擇長度伸縮(Length Extension, LE)模態作為研究對象，共振頻率介於5-6 MHz，我們探討兩種壓電LE模態共振器在空氣及水中的性能及分析背景訊號的來源。
我們利用四道光罩的製程完成元件製作。從空氣的量測結果可知對於高介電常數的壓電材料或高頻率的元件，由於壓電材料的靜態電容阻抗值較低，流經下電極的電流會貢獻一定的背景訊號。從水中的量測結果可知水具有高介電常數的特性與水中帶電離子會分別造成饋通電容項與饋通電阻項阻抗值降低而使背景訊號增加，其中以饋通電阻項對背景訊號的影響較大，在嘗試利用虛設共振器消除水中帶電離子所造成的饋通電阻項後，元件在水中的訊號背景比仍舊小於1 dB；嘗試在元件表面鍍上絕緣薄膜後，薄膜有效阻擋饋通電阻項的影響，並且也使饋通電容值降低，元件在鍍膜後有效提升在水中的訊號背景比。元件在空氣及水中分別有4.55 fg及157 fg的質量解析度，具有應用在氣體與水中感測的潛力。

In this work, we develop PZT & AlN piezoelectric resonator plateforms. We adopt lenth extensional mode (LE mode), and the resonant frequency is around 5-6 MHz. We investigate the performance of PZT & AlN LE resonators in air & water and analyze the background signal (feedthrough signal).
We fabricate the devices through four mask process. In air measurements, large dielectric constant of piezoelectric material or high frequency device has lower impedence of static capacitance, hence the current flowing through bottom electrode will cause background signal to increase. In water measurements, water with high dielectric constant and ions in water will increase capacitive feedthrough and resistive feedthrough, respectively. Resistive feedthrough is dominant in increasing background signal. Signal to background ratio (SBR) in water is still less than 1 dB after cancelling resistive feedthrough with dummy resonator. After coating insulation layer on device, resistive feedthrough can be blocked and capactive feedthrough is also reduced. SBR in water is improved after coating insulation layer. Mass resolution is air and water is 4.55 fg and 157 fg, respectively. The devices have the potential to be gas and liquid sensor.

摘要 i
Abstract ii
致謝 iii
目錄 v
圖目錄 ix
表目錄 xvii
第一章 前言 1
1-1 背景介紹 1
1-2 文獻回顧 3
1-3 本文架構 8
第二章 原理分析與設計 9
2-1 壓電效應 9
2-2 壓電共振器運作原理 11
2-2-1 機械系統 11
2-2-2 等效電路 12
2-2-3 LE模態共振器公式推導 14
2-2-4 LE模態共振器水中分析 19
2-3 質量感測原理 23
2-4 元件設計與模擬 24
第三章 製程與結果討論 28
3-1 製程流程概述 28
3-2 PZT共振器製作流程 31
3-2-1 PZT晶圓的準備 31
3-2-2 PZT濕蝕刻製程 31
3-2-3 鉻、金蒸鍍及掀舉製程 33
3-2-4 正面乾蝕刻製程 35
3-2-5 背面乾蝕刻製程 38
3-3 AlN共振器製作流程 41
3-3-1 AlN晶圓的準備 41
3-3-2 AlN乾蝕刻製程 41
3-3-3 鉻、金蒸鍍及掀舉製程 42
3-3-4 正面乾蝕刻製程 43
3-3-5 背面乾蝕刻製程 43
3-4 製程瓶頸討論 46
3-5 元件初步分析 47
第四章 量測與結果分析 52
4-1 壓電材料參數萃取 52
4-1-1 壓電係數d31量測 52
4-1-2 介電係數ɛ33及介電損失量測 53
4-1-3 殘餘應力量測 54
4-2 PZT共振器於空氣中的頻率響應及振盪訊號分析 60
4-3 PZT共振器於水中的頻率響應及振盪訊號分析 70
4-4 AlN共振器於空氣中的頻率響應及振盪訊號分析 76
4-5 AlN共振器於水中的頻率響應及振盪訊號分析 83
4-5-1 Exp1: No Parylene, DI Water 84
4-5-2 Exp2: No Parylene, Normal Saline 87
4-5-3 Parylene Coating 91
4-5-4 Exp3: Parylene Coating, DI Water 92
4-5-5 Exp4: Parylene Coating, Normal Saline 95
4-5-6 3rd LE模態在水中的表現 98
4-5-7 元件在不同水量下的表現 100
4-5-8 藉由虛設共振器消除饋通訊號 104
4-5-9 AlN元件於水中的振盪訊號分析 109
4-5-10 PZT及AlN元件水中實驗小結 111
4-6 奈米銀液滴噴印實驗 113
4-7 頻率溫度係數量測 117
4-8 PZT與AlN元件的比較 120
第五章 結論與未來工作 122
參考資料 124

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