吸附原子在二維材料上的遷移行為是基礎科學中重要的資訊。我們嘗試用化學氣相沉積法製備銦吸附原子於單層二硫化鎢的系統，並且利用掃瞄式穿透電子顯微鏡觀察銦吸附原子的遷移行為並進行分析。我們發現在 非晶碳較少的區域，銦原子的遷移行為與理論計算的結果一致；然而非晶碳較多的區域其遷移行為則與理論計算結果稍微不同。

Adatoms migration on 2d material is important for fundamental science. In this thesis, first, we prepare our system - Indium adatoms on monolayer tungsten disulfide by the method of CVD. Then, by taking advantage of the STEM technique, we detect the migration of adatoms by in-situ ADF-STEM images. Experiment results show the same trend as theoretical calculation in clean regions, while slightly different in amorphous carbon-rich regions.

論文摘要......................................................... I
Abstract.........................................................III
致謝............................................................. V
目 錄 ..........................................................VIII
第一章 序論..................................................... 1
1.1 半導體科技發展史 . . . . . . . . . . . . . . . . . . . .. . 1
1.2 二維材料發展 . . . . . . . . . . . . . . . . . . . . . . . . 2
1.3 吸附原子於過渡金屬二硫屬化物 . . . . . . . . . . . . . . . . 5
1.4 論文結構 . . . . . . . . . . . . . . . . . . . . . . . . . . 6

第二章 二維材料介紹.............................................................. 7
2.1 石墨烯 (Graphene) . . . . . . . . . . . . . . . . . . . . . .7 2.1.1 晶體結構 (Lattice structure) . . . . . . . . . . . . . . . 7
2.1.2 電學性質 (Electrical properties) . . . . . . . . . . . . . 8
2.2 二硫化鎢 (Tungsten disulfide) . . . . . . . . . . . .. . . . 14 2.2.1 晶體結構 (Lattice structure) . . . . . . . . . . . . . . . 14 2.2.2 電學性質 (Electrical properties) . . . . . . . . . . . . . 16
第三章 材料成長與檢測............................................................... 19 3.1 石墨烯成長與檢測 . . . . . . . . . . . . . .. . . . . . . . . 19 3.1.1 成長設備 . . . . . . . . . .. . . . . . . . . . . . . . . . 20
3.1.2 流程與參數 . . . . . . . . . . . . . . . . . . . . . . . . 21
3.1.3 拉曼光譜檢測 . . . . . . . . . . . . . . . . . . . . . . . 22

3.2 成長吸附銦原子二硫化鎢及檢測 . . . . . . . . . . . . . . . . . 27 3.2.1 成長設備 . . . . . . . . . . . . . . . . . . . . . . . . . . 27 3.2.2 流程與參數 . . . . . . . . . . . . . . . . . . . . . . . . 30 3.2.3 光學顯微鏡、拉曼光譜及光致螢光光譜檢測 . . . . . . 35
3.3 沿石墨烯側向成長吸附銦原子二硫化鎢及檢測 . . . . . . . . . 39
3.3.1 流程與參數 . . . . . . . . . . . . . . . . . . . . . . . . 40 3.3.2 拉曼光譜檢測 . . . . . . . . . . . . . . . . . . . . . . . 42
第四章 掃瞄式穿透顯微鏡實驗結果與分析............................................. 43
4.1 TEM影像 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 4.2 吸附原子之準實時影像分析 . . . . . . . . . . . . . . . . . . . 46 4.2.1 實時影像­1 . . . . . . . . . . . . . . . . . . . . . . . . . 48 4.2.2 實時影像­2 . . . . . . . . . . . . . . . . . . . . . . . . . 62
第五章 結論............................................................... 71
參考文獻.................................................. 73

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