先前有研究團隊利用電荷堆積隨時間的操控，動態調變元件內量子點團整體的螢光強度。這個元件主要是利用普瑟爾效應改變量子點的生命週期。在本文中，我們試著使用相同的元件設計，將動態調控應用於量子點單光子發光的時間波包。
這個元件是由氮化鈦–二氧化矽–銀組成的三層異質結構，並將半導體量子點分散置於元件二氧化矽絕緣層內，一個類似於共振腔的結構。利用氮化鈦落在ENZ區間，介電常數會對電荷累積有劇烈的反應，來進行調變。當氮化鈦偏向表現金屬性質時，共振腔會因為產生表面電漿子而增加光與物質的交互作用，而改變量子點輻射的速率。
此外，能否對量子點發光進行動態操控的關鍵在於氮化鈦以射頻磁控濺鍍沉積時的條件，諸如溫度、壓力、氣體種類等等。因此，我們嘗試利用不同沉積參數和不同材料，試圖優化並解決在過程中遇到的問題。
這類動態調控元件可以作為於在晶片上的元件，廣泛應用於量子資訊。

Previous research has proposed and carried out the phenomenon of dynamical controlled modulation in total fluorescence intensity of colloidal quantum dot by field effect. The basic mechanism is based on lifetime changes with Purcell effect, which shows the probability to be applied to altering the wave function of single photon. Therefore, we try to demonstrate the dynamic controlled single photon wave function emitted from colloidal quantum dot at visible/NIR frequency in room temperature.
Quantum dots are placed in a TiN/SiO2/Ag heterostructure. The deposition process includes e-beam evaporation and RF magneton sputtering are used, which is critical to the performance of the device. We try to solve some difficulties by change the deposition parameters and deposition materials.
The dynamical controlled single photon wave function device can be used in on-chip device for quantum information applications.

摘 要 I
ABSTRACT II
致謝 III
CONTENTS IV
TABLE VI
FIGURES VII
CHAPTER I 1
1. 基本介紹 1
1.1. 基本介紹和動機 1
1.2. 單光子光源 2
CHAPTER II 4
2. 共振腔和自發輻射改良 4
2.1. 自發輻射 4
2.2. 共振腔偶合下的自發輻射改良 5
2.3. 表面電漿子共振腔和光子晶體微共振腔 9
2.4. 表面電漿子 11
2.5. 表面電漿子共振腔的能量轉移 14
CHAPTER III 17
3. 替代金屬和動態操控 17
3.1. 動態操控 17
3.2. 替代金屬 18
3.3. 氮化鈦TiN 22
3.4 ENZ模態 23
CHAPTER IV 26
4. 材料和方法 26
4.1. 量子點 26
4.1.1.量子限制效應 28
4.1.2.量子點螢光強度動態和核–殼結構 29
4.1.3.間歇放光 31
4.1.4.奧杰效應 32
4.2. 沉積鍍膜 33
4.2.1.電子束蒸鍍 35
4.2.2.磁控射頻濺鍍 36
4.3. 測量系統 39
4.3.1.光路架設 39
4.3.2.共焦顯微鏡 40
4.3.3.時間解析螢光強度測量 41
4.3.4.雙光子螢光關聯光譜 42
CHAPTER V 44
5. 實驗結果和討論 44
5.1. 樣品設計 44
5.2. 樣品製作 46
5.3. 實驗結果和討論 49
5.3.1.偵測不到量子點 50
5.3.2.氮化鈦動態操控 58
5.3.3.結果討論 64
CHAPTER VI 66
6. 結論 66
REFERENCE 67

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