本論文主要在探討如何提升離子感測場效電晶體之效能，並且應用於生物醫學。本論文提出延伸閘極場效電晶體陣列，不同於常見延伸閘極場效電晶體通常使用一顆電晶體，延伸閘極至量測物。本文提出將閘極直接延伸於電晶體正上方，並且組合成陣列等方式，用以測量不均勻蛋白質濃度。本文主要提出兩種陣列架構，一種為傳統源極隨偶器型，另一種為差動訊號型，並且都加入類比數位轉換器用以將來數據分析使用。並未來將配合長庚大學應用於帕金森氏症之感測。透過表面沉積金，並且製作自我集結單分子層(Self-assembled monolayers, SAM)。因金可以和硫醇鍵(Thiol)的生物分子產生共價結合，並且透過此系統檢測帕金森氏症重要指標α-突觸核蛋白之濃度。

This article focuses on how to increase the efficiency of ion-sensing field effect transistors (ISFETs) and apply them to biomedicine. This article proposes an extended gate field effect transistor (EGFET) array. Unlike ordinary extended gate field-effect transistors, transistors are usually used to extend the gate to the measurement object. This article proposes to extend the gate directly above the transistor and combine it into an array to measure the uneven protein concentration. This article mainly proposes two types of array architectures, one is the traditional source follower type and the other is the differential signal type, and both have added analog-to-digital converters for future data analysis. In the future, it will cooperate with Chang Gung University in the application of Parkinson's disease sensing. Gold is deposited through the surface, and self-assembled monolayers (SAM) are fabricated. Because gold can covalently bind to thiol biomolecules, the system can detect the concentration of α-synuclein, an important indicator of Parkinson's disease.

中文摘要 i
Abstract ii
致謝 iii
表目錄 vi
圖目錄 vii
第一章 緒論 1
1.1 研究動機 1
1.2 研究方法 2
1.3 論文架構 3
第二章 電晶體概論 4
2.1 場效電晶體(Field-Effect Transistor) 4
2.2 臨界電壓(Threshold Voltage) 5
2.3 傳統電晶體操作區域 7
2.3.1 截止區(Cut-off or sub-threshold region) 7
2.3.2 線性區(Linear region, triode mode or ohmic mode) 7
2.3.3 飽和區（saturation or active mode） 8
2.4 離子感測場效電晶體 (Ion-Sensitive Field-Effect Transistor , ISFET) 9
2.4.1 吸附鍵模型(Site-binding model) 11
2.4.2 ISFET元件特性 13
2.5 延伸閘極場效電晶體 (Extended-Gate Field-Effect Transistor, EGFET) 14
第三章 電路設計與模擬 15
3.1 離子感測器之結構設計 15
3.2 電路簡介 16
3.3 源極隨偶器架構陣列設計 17
3.3.1 源極隨偶器架構陣列考量及模擬 18
3.4 全差動信號架構陣列設計 19
3.4.1 差動訊號架構陣列考量及模擬 20
3.5 運算放大器設計 21
3.5.1 輸入共模範圍與輸出擺幅 22
3.5.2 電壓增益 22
3.5.3 頻率響應與相位邊界 23
3.5.4 運算放大器模擬 24
3.6 偏壓電路設計 27
3.6.1 偏壓電路模擬 28
3.7 單端信號轉差動信號電路 29
3.7.1 單端信號轉差動信號電路模擬 30
3.8 類比數位轉換器 31
3.9 源極隨偶器架構佈局 32
3.10 全差動信號架構佈局 33
第四章 量測環境與測量 34
4.1 量測使用之設備 34
4.2 晶片製作流程 36
4.3 量測 38
第五章 結論與未來展望 41
5.1 結論 41
5.2 未來展望 42
參考文獻 43

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