本文致力將光源與矽基板整合，我們提出利用快速熱熔磊晶法(RMG)製備銻化鎵微碟共振腔於矽基板，因為銻化鎵熔點在712℃，而矽的熔點為1414℃。要將III-V整合在矽基板上，需要面對的困難點包含銻化鎵與矽的晶格不匹配達13%，銻化鎵的熱膨脹係數又高達矽的3倍，且銻化鎵以同相位排列ABABA，倘若不同相位排列則會形成反相位域(antiphase domain)。
過去許多的三五族異質整合運用的方法為分子束磊晶(MBE)與有機金屬化學氣相沉積法(MOCVD)製備，但本實驗是以電子束及熱蒸鍍共蒸鍍銻鎵薄膜，利用鍍率去控制膜厚、濃度以及粗糙度，雖然製備出來的品質不如MBE以及MOCVD，但仍可藉由RMG的方式做修復。
至於光學結構方面我們利用微碟(microdisc)作為我們共振腔的結構，我們利用有限差分時域方法模擬微碟結構中的共振頻譜，當銻化鎵的厚度為320 nm與微碟直徑為5 μm，自由光譜範圍(FSR)為48.2 nm。
接著藉由改變退火參數、多層堆疊參數、去除核窗之原生氧化層方法，來優化薄膜磊晶的品質，最理想的製程條件為單次加溫到融點之上、純銻層以3 nm、3 nm與4 nm的多層堆疊結構蒸鍍以及以浸泡稀釋氫氟酸60秒去除原生氧化層，獲得最高的PL訊號強度約為15000 a.u.，再將最好的製程條件應用在微碟結構並且獲得在光譜上有特定波長上有強度上的放大，自由光譜範圍(FSR)為33.4 nm。本實驗主要判別晶相、發光效率與表面粗糙度，運用原子力顯微鏡(AFM)、光致發光系統(PL)、穿透式顯微鏡(TEM)、EDS與選區電子繞射圖(SEAD)等等量測工具。

In this thesis, we focus on integrate the light source with the silicon substrate. We propose rapid melt growth (RMG) method to fabricate GaSb microdisk resonator on the silicon substrate. Because the melting point of GaSb and Si are 712 ℃ and 1414℃. In order to integrate III-V on the Si substrate, there are some problems to be solved. Difficulties include that the lattice mismatch between GaSb and Si is up to 13%, and the thermal expansion coefficient of GaSb is up to three times that of Si, and GaSb is arranged in the same phase as ABABA, and if different phases are arranged, an anti-phase domain is formed.
In the past, many of the III-V heterogeneous integration methods were fabricated by molecular beam epitaxy (MBE) and metal organometallic chemical vapor deposition (MOCVD). However, we deposit Ga and Sb by electron beam and thermal evaporation. We can optimize deposition rate to control the film thickness, element concentration and roughness. Although the quality is not as good as MBE and MOCVD, it can be repaired by RMG.
For the optical structure, we choose microdisc as the structure of our resonant cavity. We use the finite difference time domain method (FDTD) to simulate the resonance spectrum in the microdisc structure. When the thickness of GaSb is 320 nm and the diameter of the microdisc is 5 μm. The free spectral range (FSR) is 48.2 nm.
Then, by changing the annealing parameters, the multi-layer stacking parameters, and the method of removing the native oxide layer at the seed window, the quality of the film layer is optimized. The optimal process conditions are a single heating to the melting point. The pure Sb layer is deposited by a multi-layer stack structure of 3 nm, 3 nm and 4 nm, and the native oxide layer is removed by D-HF for 60 seconds. The highest PL intensity of about 15000 a.u.. We applied this best conditions on microdisc structure. At a specific wavelength, it is obtained to have intensity amplification on the spectrum, and the free spectral range (FSR) is 33.4 nm.
In this experiment, the material is characterized by Photoluminescence (PL), Transmission Electron Microscopy (TEM), Energy-dispersive X-ray spectroscopy (EDS), Selective Area Diffraction pattern (SAD), atomic force microscopy (AFM) and so on.

Abstract I
摘要 III
目錄 VII
圖目錄 IX
表目錄 XII
第一章 緒論 1
1.1 前言 1
1.2 研究動機與目的 2
1.3 論文架構 6
第二章 快速熱熔磊晶法背景介紹 7
2.1 銻化鎵元素介紹 7
2.2 矽基板與銻化鎵的異質整合之缺陷來源 9
2.3 快速熱熔磊晶法 13
2.4 共振腔中自發輻射 16
2.5 模擬微碟結構中的共振頻譜 17
第三章 元件製作及量測系統 19
3.1 元件製作流程圖 19
3.2 元件製作細節以及重要參數 20
3.3 光致發光(PL)量測系統架設 27
第四章 實驗量測與分析 30
4.1 多層堆疊參數對磊晶的影響 31
4.2 去除核窗之原生氧化層對磊晶的影響 35
4.3 熱退火參數對磊晶的影響 36
4.4 銻鎵比例對微碟共振腔之譜線的影響 39
第五章 結果與討論 44
5.1 結論 44
5.2 改善 45
參考資料 47

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