隨著智慧裝置以及網際網路的普及化，光感測器成為人類生活中不可或缺的角色。而感測元件的體積也隨著科技的進步不斷縮小。目前非可見光波段的光偵測器，如紫外光及紅外光偵測器，需使用成本較高的材料來製作。若能利用CMOS標準製程來製作紫外光光偵測器並能整合讀取電路於晶片上，不僅能降低產製作成本也能達到積體化縮小尺寸的目標。
本論文利用CMOS標準製程結合金屬-介電質-金屬結構的紫外光帶通濾波器以及NPN指叉型式橫向雙極性光電晶體(Inter-digitated Lateral Bipolar Phototransistor)，整合單一像素讀取電路於同一晶片。文中將提出相關的設計與製程方式。藉由紫外光帶通濾波器在波長348 nm擁有58 %的穿透率，我們成功抑制可見光響應度。紫外光電晶體在逆向偏壓0.75 V的暗電流數值為3.97 x 10^-11 A，整合讀取電路可量測到2.00 × 10^-10 A的暗電流，在相同積分時間下，隨著照光強度越大，輸出電壓變化量也有所增加。

We use standard CMOS fabrication process to implement interdigitated Si lateral bipolar phototransistors integrated with the readout circuits. After the device is fabricated, an MDM (metal-dielectric-metal structure) ultraviolet Fabry-Pérot band-pass filter on the phototransistors to suppress the transmittance of visible light. The maximum optical transmittance is 0.58 at the wavelength 348 nm, while the visible light transmittance, on the other hand, is reduced to be less than 0.17. When the bias voltage is 0.75 V, the dark current of the phototransistors is measured to 3.97 x 10^-11 A. The readout circuits can convert the photocurrent to voltage, which is proportional to the light intensity and the integration time.

摘要 I
英文摘要 II
致謝 III
目錄 V
圖目錄 VIII
表目錄 XVI
第一章 緒論 1
1.1前言 1
1.2研究動機與目的 4
1.3論文文章架構 6
第二章 理論背景 8
2.1紫外光(UV)在矽基材的吸收 8
2.2光偵測器原理 10
2.2.1光偵測器種類與比較 10
2.2.2光偵測器基本操作原理 10
2.2.3光偵測器特性參數 12
2.2.4光電晶體操作原理 18
2.3紫外光帶通濾波器 21
2.4讀取電路原理與雜訊 26
2.4.1畫素電路 26
2.4.2 MOS電流鏡 28
2.4.3單位增益緩衝器(Unity Gain Buffer) 31
2.4.4積分電容及雜訊影響 37

第三章 紫外光光電晶體模擬設計 41
3.1紫外光光電晶體結構設計 41
3.2光電晶體暗電流特性模擬 42
3.3紫外光帶通濾波器(FDTD)光學模擬 45
第四章 讀取電路模擬與設計 50
4.1組合邏輯電路模擬 50
4.1.1 3-8解碼器模擬 50
4.2類比電路模擬 55
4.2.1 單位增益緩衝器模擬 55
4.2.2 單一像素讀取電路模擬 62
4.3元件讀取整體電路設計及模擬 67
第五章 光電晶體元件與讀取電路整合製作流程 71
5.1光電晶體元件製作流程圖及說明 71
5.1.1 紫外光光電晶體與讀取電路製作 71
5.1.2 紫外光光電晶體與讀取電路後段製作流程 72
5.1.3 晶片封裝 80
第六章 實驗量測結果與分析 81
6.1紫外光帶通濾波器頻譜量測及分析 81
6.1.1 紫外光光電晶體及薄膜成品 81
6.1.2薄膜量測結果與分析 83
6.2紫外光光電晶體光暗電流量測與分析 86
6.2.1元件特性曲線量測儀器架設 86
6.2.2光電晶體暗電流量測分析 89
6.2.3光電晶體光電流量測及光轉電響應頻譜分析 90
6.3 光電晶體單一像素量測與分析 104
6.3.1單一像素元件整合讀取電路量測儀器架設 104
6.3.2單一像素電流電壓轉換量測分析 106

第七章 結論與未來展望 110
7.1結論 110
7.2改善 112
7.3未來展望 119
參考文獻 120

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