由於物聯網的興起，人們日常使用的產品對於電子IC的需求也隨之增加，在這產品演化的趨勢中，嵌入式相關產品的需求也開始日漸增加。其中，遷入式近紅外光感測器逐漸被應用於各領域；目前市面上近紅外光感測器多半需要特殊基材，與CMOS製成積體電路製程不相容，使得紅外光感應器(IR Sensor)普及性不高，本論文對此提出創新的遷入式近紅外光感測元件，希望未來能應用於整合式系統。
本論文提出一個具有對光感應有調變能力的矽基近紅外光感測元件，此近紅外光感測元件完全相容於奈米互補式金氧半導體邏輯製程，不需要額外的光罩或特殊製程步驟。此近紅外線感測器由一無閘極元件作為基礎，當光線觸及通道區時，會影響該區域之能障高度，造成讀取電流變化。利用無閘極通道上方不會影響光穿透的氧化層(Resist-Protection-Oxide, RPO)以及一氮化層(Contact-Etch-Stop-Layer, CESL)來做為電子儲存區域，而儲存的電子能導致通道區能障高度改變。藉由調變通道區的能障高度，此元件對於近紅外光的感光度也隨之改變；電性分析也顯示出此元件有優異的近紅外光靈敏度。此全新矽基近紅外光感測元件可望應用於各項嵌入式近紅外光感測系統。

Human needs for integrated infrared or near-infrared sensors have increased significantly over the past few years, with the rise of the Internet of Things. When all things are to be connected to the Internet, demands for integrated NIR sensor applications have become a new developmental trend. In this trend, integrated near-infrared sensors have also gained more attention over the years. However, currently, most of the near-infrared sensors are made on non-silicon-based substrate. This study proposed a brand-new solution of silicon-based integrated near-infrared sensors, giving conventional technology a direction in its advancement.
This novel fully silicon-based, near-infrared sensor has the ability to change its sensitivity to near-infrared illuminations while being fully compatible to nano-scale CMOS technology, with no extra masks or special process requirements. Such device is based on a gateless transistor. When light is illuminated on the gateless channel region, the incoming light will induce barrier lowering at the channel region, giving rise to subthreshold current. With a layer of resistive protective oxide (RPO) layer and a contact etch stop layer (CESL) above the channel region, the device gains the ability to modulated energy barrier height based on the charge stored inside the CESL layer. Through electrical analysis, this device reveals higher near-infrared sensitivity as barrier height is lowered. This novel CMOS compatible silicon-based barrier tunable near infrared sensor could become a promising solution of near-infrared sensors for embedded IC systems.

摘要 …………………………………………………………………………………………………i
Abstract…………………………………………………………………………………………………ii
致謝 …………………………………………………………………………………………………iii
內文目錄 …………………………………………………………………………………………………iv
附圖目錄 …………………………………………………………………………………………………vi
第一章 序論…………………………………………………………………………………………1
1.1 近紅外光感測元件簡介…………………………………………………1
1.2 研究動機………………………………………………………………………………2
1.3 論文大綱………………………………………………………………………………3
第二章 近紅外光感測器技術回顧……………………………………………4
2.1 近紅外光感測器之物理模型………………………………………4
2.2 近紅外光感測器之發展…………………………………………………5
2.2.1 NIR與近紅外光感測元件之發展………………………………5
2.2.2 非矽基材紅外光感測元件……………………………………………6
2.2.3 全矽基材紅外光感測元件……………………………………………7
2.3 小結………………………………………………………………………………………8
第三章 實驗設計與量測環境介紹…………………………………………17
3.1 近紅外光感測元件結構與相關理論………………………17
3.1.1 近紅外光感測元件結構………………………………………………17
3.1.2 通道熱電洞引發熱電子注入原理……………………………18
3.1.3 感光區能障與元件電流之關係…………………………………19
3.2 近紅外光感測元件相關參數與實驗設計………………20
3.2.1 暗電流與光電流………………………………………………………………20
3.2.2 光反應度……………………………………………………………………………21
3.2.3 感光區能障設計………………………………………………………………22
3.2.4 電子儲存效能……………………………………………………………………23
3.3 量測環境設計與架設………………………………………………………23
3.4 小結…………………………………………………………………………………………24
第四章 量測結果之討論與分析…………………………………………………32
4.1.1 電子注入點…………………………………………………………………………32
4.2 元件效能係數量測結果…………………………………………………33
4.2.1 暗電流……………………………………………………………………………………33
4.2.2 光電流近紅外光反應度…………………………………………………34
4.2.3 電子儲存效能……………………………………………………………………35
4.3 感光區能障高度與近紅外光感測能力之分析………35
4.4 小結…………………………………………………………………………………………36
第五章 總結…………………………………………………………………………………………51
參考文獻……………………………………………………………………………………………………53

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