在傳統的電晶體中次臨界擺幅受到Boltzmann tyranny的限制，具有60mV/dec的極限值，在未來低功耗應用受到限制，而加入鐵電材料負電容作為閘極氧化層後可以突破這個限制。此外，隨著電晶體的微縮，許多新穎的材料受到研究，而二維材料二硫化鉬具有原子級的厚度及良好的穩定性，在元件微縮時可以具有良好的閘極控制能力。本文結合兩者的優勢，利用原子層沉積(ALD)沉積鐵電材料HZO與high-K材料HfO2作為閘極氧化層，而化學氣相沉積的二硫化鉬作為通道層，製作出元件具有10^4 on/off ratio與SSmin = 17.7 mV/dec的背閘極電晶體。

In MOSFET, the subthreshold swing is limited by "Boltzmann tyranny" at 60 mv/dec at room temperature and therefore precludes application of low operation voltage. Adding the ferroelectric material to the gate stack of MOSFET may offers a promising solution to overcome the physical limitation. In addition, there are many researches of new ma-terials with the scaling transistors. Molybdenum Disulfide, a 2D material, has atomically thickness, good stability and well gate control ability while scaling the devices. The the-sis combines these advantages and demonstrates NC-2D FET has subthreshold swing 17.7 mV/dec and on/off ratio 10^4 with a ferroelectric hafnium zirconium oxide (HZO) layer as gate dielectric which was deposited by Atomic Layer Deposition and Molyb-denum Disulfide as channel.

致謝 i
論文摘要 ii
Abstract iii
目次 iv
圖次 vi
表目錄 viii
第一章 序論 1
1.1 研究動機 2
1.2 論文結構 2
第二章 文獻回顧 5
2.1 二維材料介紹 5
2.1.1 基本介紹 5
2.1.2 二硫化鉬介紹 6
2.1.3 二硫化鉬的拉曼光譜 10
2.2 負電容 11
2.2.1 基本介紹 11
2.2.2 二氧化鋯鉿HZO 13
第三章 元件製作 17
3.1 元件製作流程 17
3.2 HZO薄膜沉積與退火 19
3.3 通道材料與源極/汲極金屬製程 21
第四章 元件電性量測 25
4.1 MIM結構C-V量測 25
4.2 NC-MoS2與MoS2電晶體I-V特性 26
4.2.1 700℃退火的HZO 26
4.2.2 600℃退火的HZO 29
4.2.3 純HfO2作為閘極氧化層 32
4.3 NC-MoS2與MoS2電晶體特性比較 33
第五章 總結與未來展望 37
5.1 結論 37
5.2 未來展望 37
參考文獻 38

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