隨著科技日益更新，各式各樣的消費性電子產品也推陳出新，像是手機、平板電腦等攜帶式裝置亦或者是電子手環、智慧型手錶等穿戴式裝置的出現都促使了現今電子產品往小體積大儲存容量方向發展。非揮發性記憶體可以依照是否能夠改寫大致分為唯讀記憶體 ( ROM ) 、單次寫入記憶體 ( OTP ) 、快閃式記憶體 ( Flash Memory ) 以及電子抹除式可複寫唯讀記憶體 ( EEPROM ) 等幾大類型。非揮發性記憶體應用範圍廣泛，例如智慧型手機、數位相機、汽車系統、悠遊卡、信用卡與識別證的晶片感應器上。雖然快閃式記憶體身為目前非揮發性記憶體之主流，卻因製程上的微縮面臨著物理極限，應著此趨勢，許多新型非揮發性記憶體之研究如雨後春筍般冒出，其中電阻式隨機存取記憶體為目前為最被看好之下一代新型記憶體之一。
本論文以16奈米製程實現一雙位元鰭式場效電晶體介電層電阻式隨機存取記憶體 ( Twin Bit FinFET Dielectric Resistive Random Access Memory , TB FIND RRAM )，此種新型記憶體於製程上不需要額外光罩，使之能相容於先進鰭式場效電晶體邏輯製程中。藉由直流掃描 ( DC sweep ) 與交流脈衝 ( AC pulse ) 分析，此新型元件操作電壓差異較大，可避免過度設置。另外，其操作速度快，雙位元之間狀態呈現高度一致性；並且可承受一萬次之設置與重置週期測試、於200oC高溫下保持優良的資料保存性，最後，在經歷連續讀取以及設置干擾等分析過後皆表現出高度可靠性。綜合上述，本論文所提出之應用於鰭式場效電晶體邏輯製程之雙位元電阻式隨機選取記憶體極有可能成為新一代主流非揮發性記憶體之候選者之一。

Nowadays, consumer electronics develop rapidly, such as cellphone and tablet or smart watch. Since the appearance of those portable devices and wearable devices become much more popular, the demand raise for data storage medium which is compact and provide high volume. Although flash Memory is the mainstream nonvolatile memory these days, as technology node keep scaling down , conventional flash memory faces challenges of its physics limits. Therefore, many research groups have been working on developing new-type NVM. Among them, the RRAM is one of the most promising solutions.
This study proposed a new device implemented in 16nm technology, called Twin Bit FinFET Dielectric Resistive Random Access Memory ( TB FIND RRAM ). It is fully compatible with FinFET CMOS logic process. By DC and AC measurement, we find that this new devices has a large enough operation window and short switching time. Besides that, it also shows that the cell is symmetric, where the resistive states of the left and right bits almost identical. In the AC pulses test, it can bear 10k set/reset cycles with good stability. The data saved in TB FIND RRAM remains stable even it is baking in the 200oC for 500 hours. Moreover, excellent read disturb and set disturb immunity are also shown in this new devices, proving its superior reliability.

摘要 i
Abstract ii
致謝 iii
內文目錄 iv
附圖目錄 vi
附表目錄 viii
第一章 序論 1
1.1 前言 1
1.1.1　磁阻式隨機存取記憶體 2
1.1.2　相變化記憶體 2
1.1.3　電阻式隨機存取記憶體 3
1.2 論文大綱 3
第二章 電阻式隨機存取記憶體相關文獻回顧 8
2.1 電阻式隨機存取記憶體基本概念 8
2.1.1電阻式隨機存取記憶體文獻回顧 8
2.1.2電阻式隨機存取記憶體模型介紹 9
2.1.3電阻式隨機存取記憶體基本操作 10
2.2 電阻式隨機存取記憶體陣列 12
2.2.1互補式電阻式記憶體陣列 12
2.2.2二極體驅動交叉點陣列與選擇器驅動陣列 13
2.2.3金屬─氧化物─半導體電晶體驅動陣列 13
2.3 小結 14
第三章 FinFET電阻式隨機存取記憶體 27
3.1 元件結構 27
3.2 量測環境介紹 29
3.3 元件特性 29
3.3.1直流電性分析 29
3.3.2 交流脈衝電性分析 30
3.4 小結 30
第四章 雙位元電阻式隨機選取記憶體陣列 41
4.1 陣列結構的比較 41
4.2 耐久度分析與逐步增加脈衝法 42
4.3 陣列可靠度量測與分析 43
4.3.1 資料保存性分析 43
4.3.2 連續讀取干擾分析 43
4.3.3 設置干擾分析 44
4.4 小結 44
第五章 總結 53
參考文獻 54

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